BR 1807 Search Results

BC817-25 VISHAY

Abstract: CRCW maxim max 1987 TFDU4100 TFDU4300 XT49S CRCW12061002FRT1
Contextual Info: TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit Description The TOIM4232 Endec IC provides proper pulse shaping for the SIR IrDA front end infrared transceivers as of the 4000-series. For transmitting the TOIM4232

capacitor Vishay VJ 1206

Abstract: CRCW12061001FRT CRCW max232 level shifter y6 dongle CRCW12061003FRT
Contextual Info: TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit ULC Technology: High performance gate array package using multiple metal layer CMOS technology featuring sub-micron channel lengths 0.35 µm . 18080 Description The TOIM4232 Endec IC provides proper pulse shaping for the SIR IrDA front end infrared transceivers

max32321

Abstract: EIA232 MAX232 MAX3232CSE QFN-20 TFDU4203 TFDU4300 XT49M MAX232 MAXIM RS232 MAX232 pin discription
Contextual Info: TOIM5232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit FEATURES • Pulse shaping function according IrDA SIR physical layer • Directly interfaces the SIR transceiver to a RS232 port 20810 • QFN-20 - package, 4 mm x 4 mm x 0.75 mm

SBR 2512

Abstract: str 6252 NEC 2561 SBR 1045 1015 STR 6053 S str w 6053 SHARP 1A04 mx 0541 b nec 2571 4 pin nec 2571
Contextual Info: MSP50x3x MixedĆSignal Processor User’s Guide 2000 Mixed-Signal Products SPSU006C IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

str 6252

Abstract: nec pc 2581 SBR 2512 MX 0541 NEC 2581 nec 2571 str w 6053 NEC 2561 STR 6053 nec upd 1511
Contextual Info: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006B October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

push pull power amplifier

Abstract: DW016 53K10 07AB str w 6252 0431 10K 16-PIN STR 6262 upd 2816 PIC 1607 lpc 2148 electrical specification
Contextual Info: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006A MAY 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

Contextual Info: TOIM5232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit FEATURES • Pulse shaping function according IrDA SIR physical layer • Directly interfaces the SIR transceiver to a RS232 port 20810 • QFN-20 - package, 4 mm x 4 mm x 0.75 mm

TOIM4232

Contextual Info: TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit Description The TOIM4232 Endec IC provides proper pulse shaping for the SIR IrDA front end infrared transceivers as of the 4000-series. For transmitting the TOIM4232 shortens the RS232 output signal to

RS232 MAX232 smd pin diagram

Abstract: MAX3232CSE
Contextual Info: Obsolete TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit FEATURES • Pulse shaping function shortening stretching used in SIR IrDA applications and • Directly interfaces the SIR transceiver TFD.and TFB.- series to an RS232 port

Maxim MAX232 RS232 level shifter

Abstract: transceiver rs232 driver receiver TFDx4x00
Contextual Info: TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit FEATURES • Pulse shaping function shortening stretching used in SIR IrDA applications and • Directly interfaces the SIR transceiver TFD.and TFB.- series to an RS232 port

Contextual Info: TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit Description The TOIM4232 Endec IC provides proper pulse shaping for the SIR IrDA front end infrared transceivers as of the 4000-series. For transmitting the TOIM4232 shortens the RS232 output signal to

max32321

Contextual Info: TOIM4232 Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit Description The TOIM4232 Endec IC provides proper pulse shaping for the SIR IrDA front end infrared transceivers as of the 4000-series. For transmitting the TOIM4232 shortens the RS232 output signal to

Contextual Info: TOIM5232 www.vishay.com Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit FEATURES • Pulse shaping function according IrDA SIR physical layer 20810 • Directly interfaces the SIR transceiver to a RS232 port • QFN-20 - package, 4 mm x 4 mm x 0.75 mm

Contextual Info: TOIM4232 www.vishay.com Vishay Semiconductors SIR Endec for IrDA Applications Integrated Interface Circuit FEATURES 18080       • Pulse shaping function shortening stretching used in SIR IrDA applications and • Directly interfaces the SIR transceiver TFD.and TFB.- series to an RS232 port

14 MARKING

Abstract: br 1807
Contextual Info: SIEMENS NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 • High DC current gain • High collector current • Collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 13 SMBTA 14 s1M s1N

BD618

Abstract: BD 202 transistors
Contextual Info: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

la 1201 sanyo

Abstract: 3SK107 3SK107 e V02s4 LI 1806 E 151 R
Contextual Info: SANYO SEMICONDUCTOR CORP 3SK107 15 E D I If 7n7D7b OCIOSA? N-Channel M OS Silicon Field-Effect Transistor Dual Gate 2031A High Frequency GeneralPurpose Amp Applications Use • FM tuners and VHF tuners Features • High power gain and small noise figure

Contextual Info: 11.10.2003 8:06 Uhr Seite C.1 Terminals / Tension clamp connection Terminals / Z-Series Overview / Z-Series C.2 - C.3 Feed-through terminals Standard model Roof-Style C.4 - C.17 C.18 - C.23 PE terminals Standard model Roof-Style C.24 - C.31 C.32 - C.37 Disconnect terminals

BLF8G20LS-260A

Abstract: ATC800B blf8g20 X3C19
Contextual Info: BLF8G20LS-260A Power LDMOS transistor Rev. 1 — 13 September 2012 Objective data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

BLM7G1822S

Contextual Info: BLM7G1822S-20PB; BLM7G1822S-20PBG LDMOS 2-stage power MMIC Rev. 2 — 26 June 2014 Objective data sheet 1. Product profile 1.1 General description The BLM7G1822S-20PB G is a dual section, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general

1283310

Abstract: LB1807 lb1809 148781 front panel ls36 1-57748-0
Contextual Info: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension

BLF6G20-45

Abstract: Power Semiconductor Applications Philips Semiconductors
Contextual Info: BLF6G20-45 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Objective data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

1800 ldmos

Abstract: SOT539A
Contextual Info: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF6G20-180P

Contextual Info: BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance