BR 1300 Search Results

pc2100r 25330 z

Abstract: cmos 4070 pc2700r-25330-c0 32 h 380 a 63 DDR400 DDR400B HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320
Contextual Info: March 2007 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Internet Data Sheet Rev. 1.32 Internet Data Sheet

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Lead Pb free product - RoHS compliant * Halogen free product (Cl<900ppm, Br<900ppm; Cl+Br<1500ppm). * Low power consumption. * High efficiency & reliability. * Versatile mounting on p.c. board or panel.

SO8 Wide Package

Abstract: M24128-B M24128-BR M24128-BW M24256-B M24256-BR M24256-BW
Contextual Info: M24128-BW, M24128-BR M24256-BW, M24256-BR 256Kbit and 128Kbit Serial I²C Bus EEPROM With Three Chip Enable Lines FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Compatible with I2C Extended Addressing Two-Wire I2C Serial Interface Supports 400kHz Protocol

Contextual Info: M24128-BW M24128-BR M24128-BF 128 Kbit serial I²C bus EEPROM Features • Supports the I2C bus modes: – 400 kHz Fast-mode – 100 kHz Standard-mode ■ Single supply voltages: – 2.5 V to 5.5 V M24128-BW – 1.8 V to 5.5 V (M24128-BR) – 1.7 V to 5.5 V (M24128-BF)

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

TAG 203 350

Abstract: tag thyristoren tag 665 100 BTX 25 800 TAG 12 665 600 tag 627 800 TAG 600 TAG 203 to48c tag 6 600
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

SO8w package outline

Abstract: JESD22-A114A J-STD-020D M24128 M24128-BR AEC-Q100-002 M24128-BW m24128bw STMicroelectronics M24128 marking code date
Contextual Info: M24128-BW M24128-BR M24128-BF 128 Kbit serial I²C bus EEPROM Features • Supports the I2C bus modes: – 400 kHz Fast-mode – 100 kHz Standard-mode ■ Single supply voltages: – 2.5 V to 5.5 V M24128-BW – 1.8 V to 5.5 V (M24128-BR) – 1.7 V to 5.5 V (M24128-BF)

HTZ240F10K

Abstract: D-68623 HTZ240F12K HTZ240F14K HTZ240F16K
Contextual Info: HTZ240F Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.7 A VRRM = 16000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ240F16K HTZ240F14K HTZ240F12K HTZ240F10K 16000 14000 12000 10000 17000 15000 13000 11000 CIRCUIT DIAGRAM

Hitachi DSA00279

Contextual Info: 2SC5273 Silicon NPN Triple Diffused Application High voltage amplifier Features • High brakedown voltage V BR CEO = 1300 V min Outline 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1300 V Collector to emitter voltage

Hitachi DSA00276

Contextual Info: 2SC5273 Silicon NPN Triple Diffused Preliminary Application High voltage amplifier Features • High brakedown voltage V BR CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: 2SC5273 Silicon NPN Triple Diffused HITACHI Preliminary Application High voltage amplifier Features • High brakedown voltage V BR CE0 = 1300 V min Outline TO -220A B IIT II U1 1 2 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25 °C)

2SC5273

Abstract: DSA003644
Contextual Info: 2SC5273 Silicon NPN Triple Diffused ADE-208-897 Z 1st. Edition Sep. 2000 Application High voltage amplifier Features • High brakedown voltage V(BR)CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C)

transistor npn high speed switching 5A 600v

Abstract: NPN Transistor 1.5A 600V BUV70 NPN Transistor 600V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV70 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed APPLICATIONS ·Designed for motor controls, switching mode power

diode avalanche DSA 25 8

Contextual Info: <3£.mi- -onauctoi £Pioauat±, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Rectifier Diode Avalanche Diode RSM V 900 1300 1300 1700 1900 RRM (BR min V 1300 1750 1950 DSI 17 DSAI17 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 VRRM =800-1800V

Contextual Info: S40.S500 Si-Brückengleichrichter für die Oberflächenmontage Surface Mount Si-Bridge Rectifiers 0.8 A Nominal current Nennstrom Alternating input voltage Eingangswechselspannung 40.500 V Plastic case Kunststoffgehäuse 0.4 g Weight approx. Gewicht ca.

Contextual Info: DBI 15-005 . DBI 15-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current – Nennstrom 15 A Repetitive peak reverse voltage 50…1600 V Periodische Spitzensperrspannung Metal case – Metallgehäuse Dimensions Abmessungen

semikron DBI

Abstract: 100A2
Contextual Info: DBI 25-005 . DBI 25-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current – Nennstrom 25 A Repetitive peak reverse voltage 50…1600 V Periodische Spitzensperrspannung Metal case – Metallgehäuse Dimensions Abmessungen

Semikron MSK B

Abstract: 500/445 Vvrms VV-800
Contextual Info: VRSM VVRMS VRRM V V 800 250 V BR min V VVRMS V 1300 1700 500 660 Miniature Bridge Rectifiers ID (Tamb = 45 °C) 2A MSK B . . ./. .–1,5 MSKa B . . ./. .–1,5 MSK B 250/220-1,5 Avalanche Types MSKa B 500/445-1,5 MSKa B 660/585-1,5 MSK. MSKa. Symbol Conditions

N mosfet 250v 600A

Contextual Info: IRFR/U9214 Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs

bfr 91

Abstract: BFW92 CANAL
Contextual Info: 4 0 . 900 MHz class A linear for CATV/MATV applications ^> TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO fj min. (V) (MHz) le (mA) Cl2e C22b* (pF) NF @ (dB) N N P P TO-72 TO-72 TO-72 TO-72 15 15 25 35 > 1300 >1400 800

Contextual Info: ise SEM I KR GN INC D I ai3bb?i a a a m a i z | 5EMIKRDN _, H~~ 2 .5 - 2.3 Vrsm Vrrm dv/dt br Itrms (maximum values for continuous operation) 24A1);28A2) | 24A1,;28A2) Vdrm V V V/|iS 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600

DB 35-16

Contextual Info: DB 35-005 … DB 35-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom 35 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1600 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

E175067

Contextual Info: DB 25-005 … DB 25-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1600 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

Contextual Info: DB 15-005 … DB 15-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom 15 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1600 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden