BR 1300 Search Results

pc2100r 25330 z

Abstract: cmos 4070 pc2700r-25330-c0 32 h 380 a 63 DDR400 DDR400B HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320
Contextual Info: March 2007 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Internet Data Sheet Rev. 1.32 Internet Data Sheet

pc2700r-25330-c0

Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C
Contextual Info: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Lead Pb free product - RoHS compliant * Halogen free product (Cl<900ppm, Br<900ppm; Cl+Br<1500ppm). * Low power consumption. * High efficiency & reliability. * Versatile mounting on p.c. board or panel.

Contextual Info: M24128-BW M24128-BR M24256-BW M24256-BR 256 Kbit and 128 Kbit Serial I²C Bus EEPROM with three Chip Enable lines Feature summary • Compatible with I2C extended addressing ■ Two-wire I2C serial interface supports 400kHz protocol ■ Single supply voltage:

m24128bw

Abstract: SO8 Wide Package
Contextual Info: M24128-BW M24128-BR M24256-BW M24256-BR 256 Kbit and 128 Kbit Serial I²C bus EEPROM with three Chip Enable lines Feature summary • Compatible with I2C extended addressing ■ Two-wire I2C serial interface supports 400kHz protocol ■ Single supply voltage:

SO8 Wide Package

Abstract: M24128-B M24128-BR M24128-BW M24256-B M24256-BR M24256-BW
Contextual Info: M24128-BW, M24128-BR M24256-BW, M24256-BR 256Kbit and 128Kbit Serial I²C Bus EEPROM With Three Chip Enable Lines FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Compatible with I2C Extended Addressing Two-Wire I2C Serial Interface Supports 400kHz Protocol

10E-2

Abstract: AEC-Q100-002 JESD22-A114A J-STD-020D M24128 M24128-BR M24128-BW Marking STMicroelectronics m24c32 ufdfpn8
Contextual Info: M24128-BW M24128-BR M24128-BF 128 Kbit serial I²C bus EEPROM Features • Supports the I2C bus modes: – 400 kHz Fast-mode – 100 kHz Standard-mode ■ Single supply voltages: – 2.5 V to 5.5 V M24128-BW – 1.8 V to 5.5 V (M24128-BR) – 1.7 V to 5.5 V (M24128-BF)

Contextual Info: M24128-BW M24128-BR M24128-BF 128 Kbit serial I²C bus EEPROM Features • Supports the I2C bus modes: – 400 kHz Fast-mode – 100 kHz Standard-mode ■ Single supply voltages: – 2.5 V to 5.5 V M24128-BW – 1.8 V to 5.5 V (M24128-BR) – 1.7 V to 5.5 V (M24128-BF)

Contextual Info: 130-08 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 130-04 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

TAG 203 350

Abstract: tag thyristoren tag 665 100 BTX 25 800 TAG 12 665 600 tag 627 800 TAG 600 TAG 203 to48c tag 6 600
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

SO8w package outline

Abstract: JESD22-A114A J-STD-020D M24128 M24128-BR AEC-Q100-002 M24128-BW m24128bw STMicroelectronics M24128 marking code date
Contextual Info: M24128-BW M24128-BR M24128-BF 128 Kbit serial I²C bus EEPROM Features • Supports the I2C bus modes: – 400 kHz Fast-mode – 100 kHz Standard-mode ■ Single supply voltages: – 2.5 V to 5.5 V M24128-BW – 1.8 V to 5.5 V (M24128-BR) – 1.7 V to 5.5 V (M24128-BF)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2518T1R5M Features Item Summary 1.5 H(±20%), 2100mA, 1300mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRL3225T4R7M Features Item Summary 4.7 H(±20%), 1300mA, 1000mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

HTZ240F10K

Abstract: D-68623 HTZ240F12K HTZ240F14K HTZ240F16K
Contextual Info: HTZ240F Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.7 A VRRM = 16000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ240F16K HTZ240F14K HTZ240F12K HTZ240F10K 16000 14000 12000 10000 17000 15000 13000 11000 CIRCUIT DIAGRAM

Hitachi DSA00279

Contextual Info: 2SC5273 Silicon NPN Triple Diffused Application High voltage amplifier Features • High brakedown voltage V BR CEO = 1300 V min Outline 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1300 V Collector to emitter voltage

2SC5273

Abstract: Hitachi DSA00395
Contextual Info: 2SC5273 Silicon NPN Triple Diffused Application High voltage amplifier Features • High brakedown voltage V BR CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

13005 TRANSISTOR

Abstract: 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte
Contextual Info: 13005 Transistor NPN HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range

Hitachi DSA00276

Contextual Info: 2SC5273 Silicon NPN Triple Diffused Preliminary Application High voltage amplifier Features • High brakedown voltage V BR CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item

13003 TRANSISTOR

Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte
Contextual Info: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range

Contextual Info: 2SC5273 Silicon NPN Triple Diffused HITACHI Preliminary Application High voltage amplifier Features • High brakedown voltage V BR CE0 = 1300 V min Outline TO -220A B IIT II U1 1 2 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25 °C)

Contextual Info: A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) Max -20V 495mΩ @ VGS = -4.5V 730mΩ @ VGS = -2.5V 960mΩ @ VGS = -1.8V 1300mΩ @ VGS = -1.5V • • • • •