BR 1300 Search Results

HTZ240F10K

Abstract: D-68623 HTZ240F12K HTZ240F14K HTZ240F16K
Contextual Info: HTZ240F Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.7 A VRRM = 16000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ240F16K HTZ240F14K HTZ240F12K HTZ240F10K 16000 14000 12000 10000 17000 15000 13000 11000 CIRCUIT DIAGRAM

Contextual Info: DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS NEW PRODUCT -20V Features and Benefits • • • • • • • • • ID RDS(on) TA = 25°C 700mΩ @ VGS = -4.5V -460mA 900mΩ @ VGS = -2.5V -420mA 1300mΩ @ VGS = -1.8V -350mA Low On-Resistance

Contextual Info: DB 15-005 … DB 15-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom 15 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1600 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

Semikron SKB C3200/2200

Abstract: semikron skb b 380 Semikron SKB b 80 c3200 B250C-3200 Semikron SKB b 500 c 3200 2200 c3200 2200 SKB B 250 C3200/2200 Semikron SKB b 500
Contextual Info: VRSM VRRM VVRMS V 100 400 800 900 1200 V 40 125 250 380 500 V BR min V VVRMS V 1300 500 Miniature Bridge Rectifiers ID (Tamb = 45 °C) 4A Types SKB B 40 C3200/2200 SKB B 80 C3200/2200 SKB B 250 C3200/2200 SKB B 380 C3200/2200 SKB B 500 C3200/2200 Cmax µF

b500c1000

Contextual Info: B.C 1000 Silicon-Bridge Rectifiers h- 19 1 Typ + ”V Nominal current Nennstrom - - 2x45°—1 - t Silizium-Brückengleichrichter - - 5 — AN 1.0 A Alternating input voltage Eingangswechselspannung — 40 40.500 V JÓ0 8 — Pastic case Kunststoffgehäuse

IXYS DSA 1-16D

Abstract: diode avalanche DSA DIODE DSA 1-16D IXYS DSA 6058AS 1200-1800V
Contextual Info: DS 1 DSA 1 VRRM = 1200-1800 V IF RMS = 7 A IF(AV)M = 2.3 A Rectifier Diode Avalanche Diode VRSM V(BR)min ① VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Standard Avalanche Type Types DS 1-12D DSA 1-12D DSA 1-16D DSA 1-18D A C A C A = Anode C = Cathode

35-16A

Abstract: 35-12a 3508a diode avalanche DSA IXYS DSA 3516A
Contextual Info: DS 35 DSA 35 VRRM = 800-1800 V IF RMS = 80 A IF(AV)M = 49 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800

LA 4451

Contextual Info: 613tib71 Vrsm VvRMS ÔÔT 0 0 0 L ,3 ^ a Miniature Bridge Rectifiers I d Tamb = 4 5 °C Vrrm 2 A V V 800 250 V(BR)min V VvRMS 1300 1700 500 660 MSK B . . . / . -1,5 MSKa B . . . / . .-1,5 MSK B 250/220-1,5 Avalanche Types V MSKa B 500/445-1,5 MSKa B 660/585-1,5

IXYS DSA 110-16F

Abstract: ds110
Contextual Info: □IXYS DS 110 DSA 110 Rectifier Diodes Avalanche Diodes 800 -1800 V 250 A 160 A RRM F RMS F(AV)M v RSM V V(BR)min V RRM V 900 1300 - 1300 1700 1900 -X- Anode \ V on stud ^ DSI 110 DSA1110 DO-205 AC Cathode •j" on stud DS DSA - 800 1200 DS 110-08F DS110-12F

2SK1179

Contextual Info: 2SK1179 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 Conditions V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500

SMP20P10

Contextual Info: SMP20P10 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –20 D TO-220AB G Drain Connected to Tab G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

fb1225

Abstract: fb2325h2 Rayovac BR2032 FB1225H2 MH12542 BR1632 safety rayovac fb1225h2 BR1632R81-B BR2335-B FB2325
Contextual Info: OEM /Technical Products R E F E R E N C E G U I D E Application Notes & Product Data Sheet Lithium Carbon-monofluoride BR Coin Cells and FB Encapsulated Lithium Coin Cells I. Introduction IV. Applications Lithium has become a generic term representing a

Semikron SKB b 80

Abstract: Semikron SKB b 500 Semikron SKB b 80 c3200 Semikron SKB C3200/2200 Semikron SKB b 500 c 3200 2200 Semikron SKB b 250 Semikron SKB b 40 Semikron SKB b 250 c 3200 2200 C5000/3300 Semikron SKB C3200/Semikron SKB b 250
Contextual Info: 013bb71 S1E » 0003^77 SEMIKRDN SEMIKRON INC Id Tamb = 45 °C 'V r s m VvRMS 4A ¡V r r m V 100 200 300 400 600 800 90 0' 12001 40 80 125 125 250 250 380 500 V(BR) 'VvRMS V ’ V 13001 500 |iF SKB SKB SKB SKB 1,6 10000 2 . 3 - 0 5 B 250 C5000/3300 2500' 0,8

diode avalanche DSA 25 8

Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A

Alpha Industries Crystal Diodes

Contextual Info: Silicon Hyperabrupt 03 A lpha Varactor Diodes CKV2020 Series exDKV6510 Series Features • Medium to High Frequency Operation ■ Guaranteed 10:1 Tuning Ratio from 2 to 10 Volts ■ Q of 500 at 1 M Hz Typical Maximum Ratings Reverse Voltage, V R: Sam e as V BR

Contextual Info: SKN a 20 • frhs V BR Ifav SKNa 20/13 SKNa 20/17 > 1300 V > 1700 V (Tease = 100°C , sin. 180 °el) 20 A (Tease = 125 °C, sin. 180°el) 12 A 42 A I frm s I fa v Ifsm i’ t P r sm K9 K5 K3 (sin. 180 °el) 8A 11 A 14 A (ree. 120 °el) 7,5 A 10,5 A 13 A 25 °C)

Contextual Info: 613 b b7 1 O O Ob BT S 070 • V rsm 4A V rrm V V 100 400 800 900 1200 40 125 250 380 500 V BR mm V VvR M S V 1300 500 SKB SKB SKB SKB SKB B B B B B 40 C3200/2200 80 C3200/2200 250 C3200/2200 380 C3200/2200 500 C3200/2200 f iF Rmin 12 10000 3000 1700 1800

M24128-BR

Contextual Info: M24128-BW M24128-BR M24128-BF M24128-DF 128-Kbit serial I²C bus EEPROM Datasheet − production data Features • Compatible with all I2C bus modes: – 1 MHz – 400 kHz – 100 kHz ■ Single supply voltage and high speed: – 1 MHz clock from 1.7 V to 5.5 V

AEC-Q100-002

Abstract: JESD22-A114 J-STD-020D M24256-BR M24256-BW
Contextual Info: M24256-BF M24256-BR M24256-BW M24256-DR 256 Kbit serial I²C bus EEPROM with three Chip Enable lines Features • 256 Kbit EEPROM addressed through the I2C bus ■ Supports the I2C bus modes: – 1 MHz Fast-mode Plus – 400 kHz Fast mode – 100 kHz Standard mode

Contextual Info: M24128-BW M24128-BR M24128-BF M24128-DF 128-Kbit serial I²C bus EEPROM Datasheet - production data Features • Compatible with all I2C bus modes: – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width SO8 (MN) 150 mil width • Memory array: – 128 Kbit (16 Kbytes) of EEPROM

2741DC

Contextual Info: M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF 256-Kbit serial I²C bus EEPROM Datasheet − production data Features • Compatible with all I2C bus modes: – 1 MHz – 400 kHz – 100 kHz ■ Single supply voltage and high speed: – 1 MHz clock from 1.7 V to 5.5 V

Contextual Info: M24128-BW M24128-BR M24128-BF M24128-DF 128-Kbit serial I²C bus EEPROM Datasheet - production data Features • Compatible with all I2C bus modes: – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width SO8 (MN) 150 mil width • Memory array: – 128 Kbit (16 Kbytes) of EEPROM

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz