BPW1 Search Results

vt1311

Abstract: volterra BPW10040
Contextual Info: Fixed Inductors for Surface Mounting 表面贴装固定电感器 BPW10040 Recommended patterns DIMENSIONS／尺寸 推荐焊盘尺寸 Tolerance公差：±0.3 Unit: mm /(单位：毫米) (Unit: mm) /(单位：毫米) FEATURES／特点 •    

8239

Abstract: BPW17 BPW17N CQY37N
Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

ic 8237

Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

BPW17

Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 0O TO TpaH3M CTO pbl Kofl: flrrnHaBoriHbi b TO H Ke MaKC. electronics 495 739-09-95, 644-41-29 BPW17 yron o63opa UCE0 MyBCTBHTenbHOCTb (UCE= 5B , X = 950 h m ) TnnrmH3bi 1 m A @ 1 m B t/cm 2 6ecqB eTH aa H yB C T B H T. X max

BPW17

Abstract: CQY37 BPW17N
Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

volterra dc converter

Abstract: Volterra BPW10040 1205AS-1002 bpw100 BPW10
Contextual Info: Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns 推奨パターン図 Tolerance：±0.3 Unit: mm FEATURES (Unit: mm) 特長 •      10.0  10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance.

volterra

Abstract: BPW10040 volterra dc converter
Contextual Info: Fixed Inductors for Surface Mounting 表面贴装固定电感器 BPW10040 Recommended patterns 推荐焊盘尺寸 Tolerance：±0.3 Unit: mm FEATURES (Unit: mm) 特点 • • • • • • 10.0 x 10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance.

BPW14

Contextual Info: Temic BPW14N S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P W 1 4 N is a h ig h s p e e d s ilic o n N P N e p ita x ia l p lan ar p h o to tr a n sisto r in a stan d ard T O - 1 8 h e r m e tic a lly s e a le d m eta l c a s e . Its g la s s le n s , fe a tu r in g a v ie w in g a n g le o f ± 1 2 ° m a k e s it

8239

Abstract: BPW16N CQY36N
Contextual Info: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

BPW14

Abstract: BPW14A BPW29 BPW17 BPW29 100 BPW13 BPW16/BPW17 BPW16 BPW13A
Contextual Info: Optoelectronic devices Photo transistors Type Group Fig. Nr. Maximum ratings Characteristics - electrical + optical Aot a W > 'f’ > O at Us = 5 V, R L = 1 0 0 Q ^ CEO at 'am b = + 2 5 °c W V S pectral curve see page 71 mA MS BPW13 A B C 21 21 21 0.375

volterra dc converter

Abstract: volterra
Contextual Info: Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns 推奨パターン図 Tolerance：±0.3 Unit: mm FEATURES (Unit: mm) 特長 •      10.0  10.0mm 角高さ4.0mm Max. 閉磁路、低直流抵抗

Contextual Info: Ferrite Inductors BPW1 0 0 4 0 Recommended patterns Tolerance ±0.3 Unit: mm (Unit: mm) FEATURES •                10.0  10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance. Suitable for large current

Contextual Info: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis­ tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable

BPW14

Abstract: 8337 BPW14N BPW14NC BPW14NB
Contextual Info: BPW14N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±12° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control.

Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

Contextual Info: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

VOLTERRA

Abstract: vt1311 VOLTERRA -VSC1294-LF.D.G.B BPW10040 volterra dc converter
Contextual Info: づ け Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns DIMENSIONS／外形寸法図 推奨パターン図 Tolerance：±0.3 Unit: mm (Unit: mm) FEATURES／特長 • • • • • • 10.0 x 10.0mm square and 4.0mm Max. height.

Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW17N

Contextual Info: BPW17N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

BPW17N

Abstract: BPW17 CQY37N
Contextual Info: BPW17N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable

CQY36

Abstract: BPW16N BPW16
Contextual Info: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable

BPW17N

Abstract: CQY37N BPW17
Contextual Info: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical