BP103 F Search Results

BP103

Abstract: U5-35 BT32 BP103 F
Contextual Info: SIEM EN S BP103 Silicon NPN Phototransistor APPLICATIONS • Computer-controlled flashes • Photointerrupters • Industrial electronics • For control and drive circuits Characteristics Ta =25°C Sym. Value Unit ^'Srnax 850 nm Spectral Sensitivity Range

Contextual Info: BP103 Silicon NPN Phototransistor Characteristics TA=25°C FEATU R ES • Especially suitable for applications from 420nm to1130nm • High linearity • TO-18, base plate, transparent epoxy resin Ians, with base connection • Spectral sensitivity selections

Contextual Info: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870

BP103

Abstract: BPW77NB BPX43-4 BPX43-3 BP103-3 BPX43 bpx434 ea3a
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Q0T0TpaH3MCT0pbi b Kopnyce □ 5 MM Kofl: fl^MHa BOnHbl B TOHKe MaKC. HyBCTBMT. A.max BPX43-3 BPX43-4 BPW77NB BP103-3 880 880 850 850 hm hm hm hm Yror o63opa ±15° ±15° ±10° 55° u CEC

8PX43

Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Contextual Info: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.

SFH400-2

Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Contextual Info: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED

Contextual Info: bOE » • 023Sbü5 DGHbSTH ibi « S I E G ,i SIEMENS AKTIENGESELLSCHAF SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 571 (14.51 492(12 5) ,141 (3 6) 118(3 0) “ F 0 1 6 9 (4 3) . 0 161(4.1) 0100 (2 54) f 0 018(045) -106 (2 7) Chip Location

SFH 462

Abstract: SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity
Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings • Highly Efficient GaAIAs LED Operating and Storage Temperature Range Top, Tstg . -4 0 to + 80°C Junction Temperature (Tj). 100°C

SFH462-L

Abstract: sfh462 sfh-462 BP103 SFH462LE7800 SFH462-K SFH462L SFH463 SFH46 LF50
Contextual Info: SFH462 SIEMENS GaAIAs INFRARED EMfTTER FEATURES Maximum Ratings • • • • • • Operating and Storage Temperature Range Top, T s t g .-40 to + 80°C Junction Temperature (T j). 100°C Reverse Voltage (VR) .3 V

J920

Abstract: BP103
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime

BPX63

Abstract: ld242
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 186 (4 .7 5 ) 141 (3 .6 ^ .671 ( 1 4 .5 ) 4 9 2 (1 2 5 ) 118 (3 .0 ) r 0 1 6 9 (4 .3 ) 0.100 (2 .5 4 ) _ 0 .1 6 1 (4 . 1) / f r i -5 0 .0 1 8 ( 0 4 5 ) |\ Anode .2 1 6 (6 .5 ) 106 <2 .7 )

sfh462

Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings * Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e T0 p. T s t g - 4 0 to + 8 0 °C J u n c tio n T e m p e ra tu re ( T j) .100°C

L0242

Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C

SFH462

Abstract: marking LE
Contextual Info: SIEMENS SFH462 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm C hip Location FEATURES Maximum Ratings * Radiation: Visible Red Range O perating and Storage Tem perature R ange (T0 p,TSTG) - 4 0 to +80°C Junction Tem perature (T j) . 100°C

SFH462-L

Abstract: sfh-462 SFH462 SFH462-K
Contextual Info: SIEMENS SFH462 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm Chip Location FEATURES Maximum Ratings • Radiation: Visible Red Range Operating and Storage Temperature Range (T q p .T s tg ) - 4 0 to + 8 0 °C Junction Temperature ( T j) . 100°C

Contextual Info: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process

Contextual Info: LD242 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm 185(4 75), 141 (3 6^ 118 (3 0) 571 (14 5) 492(12 5) * max * r 0100 (2 54) -p V — 0 169(43) . 0161(4.1) i f e \ t Anode 0.018(0 45) 106(2 7) Chip Location 216(5 5) 204 (5 2) Maximum Ratings

TCA 7800

Abstract: sfh462 sfh-462 SFH 462
Contextual Info: SIEM ENS SFH462 GaAIAs RED EMITTER Package Dimensions in Inches mm 141 (3.6) .1 18(3.0) 0 .0 1 8 ( 0 .45) ) T T 0 ,1 6 9 (4.3) 0.161 (4.1) / .100 U l (2.54) .571 (14.51 .492(12.5) .106 .216(5.5) .204 (5.2) (2.7) Chip Location FEATURES Maximum Ratings • Radiation: Visible Red Range

BP103 F

Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e To p , Ts t q - 4 0 to + 80°C * Radiation in Near Infrared Range Ju n c tio n T e m p e ra tu re ( T j ) .100°C

Phototransistor bp 101

Abstract: BP103 siemens
Contextual Info: SIEM ENS BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im

LD242

Abstract: m 7106 L0242 BPX63 bp103
Contextual Info: LD242 SIEMENS GaAs INFRARED EMITTER P ack ag e Dim ensions in Inches mm 571 (14 5) 492(12 5) 141 (3 6^ 1 85 (4 75), 118 (3 0) * max- * r 0 1 6 9 (4 3 ) 0 1 6 1 (4.1) 0100 (2 54) _ I t 0 .0 1 8 ( 0 45) 'S ? ! \ Anode 2 1 6 (5 5) 204 (5 2) -1 0 6 (2 7)

varistor far 10k 391

Abstract: varistor 10E 431 DB6543 IEC 62056 LNK304DG 12 VOLT 50 AMP smps schematics Switchcraft 712A Instruction susumu resistors 71M6543F 62056-21
Contextual Info: 19-5974; Rev 4-2; 7/11 71M6543F Demo Board USER’S MANUAL TERIDIAN Semiconductor Corporation, a Subsidiary of Maxim Integrated Products 6440 Oak Canyon Rd., Suite 100 Irvine, CA 92618-5201 Phone: 714 508-8800 ▪ Fax: (714) 508-8878 http://www.maxim-ic.com

71M6543

Abstract: IEC 62056 DB6543 24 volt output smps design IEC62056 71M653X teridian metering software user teridian application notes 71m6513 small size Ferrite core TDK L6 material maxim temp sensors analog design guide
Contextual Info: 71M6543 Demo Board USER’S MANUAL Page: 1 of 91 v5 71M6543 Polyphase Energy Meter IC DEMO BOARD REV 4.0 and 5.0 USER’S MANUAL Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent

rc-5001 relay

Abstract: AC digital voltmeter using 7107 Digital ohm meter by using IL 7107 N pin diagram of ic 4066 PWM IC 8 PIN DIP 3842 12vdc to 220vac ups schematic diagram FLUKE Clamp meter diagram 12vdc motor forward reverse control diagram 220v 300w ac regulator circuit 3842 PWM power supply application note
Contextual Info: INSTRUCTION MANUAL FOR EXH Series DC Power Supply Release 2.0 95/12/29 TM-3000-EM Electronic Measurements Inc. 405 Essex Road Neptune, New Jersey USA 07753 Tel.: (908) 922-9300 FAX: (908) 922-9334 1-800-631-4298 EXH SERIES SUPPLY ABOUT THIS MANUAL About This Manual