BLOCKING Search Results

tr8c

Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

TIC64

Abstract: TIC62 2N5060 TIC60 thyristor+st+103
Contextual Info: TYPES 2N5060 THRU 2NS064. TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORSt 800 mA DC • 30 thru 200 VOLTS 03 H c-< rr* 2 m mw H to Z S O S mechanical data These thyristors are encapsulated in a plastic com pound specifically designed fo r this purpose, using a highly

BT138-800G

Contextual Info: BT138-800G 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

TPDV640RG

Abstract: TPDV840RG TPDV1240 TPDV1240RG high voltage triacs
Contextual Info: TPDVxx40 40 A high voltage Triacs Features A2 • On-state current IT(RMS : 40 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 200 mA ■ Commutation @ 10 V/µs: up to 142 A/ms ■ Noise immunity: 500 V/µs ■ insulated package:

Contextual Info: MOTOROLA Order this document by MCR12/D SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information 'Motorola preferred devices Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 12 AMPERES RMS 600 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor

capacitive discharge ignition

Contextual Info: BT151X-800C SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking

ROADM JDSU

Abstract: ROADM Polatis FC/SC PATCH CORD SINGLE MODE ooo switch rs232 protocol Transistor 5503 EIA-526-14A
Contextual Info: Optical Switch Tray OST Optical Switch Tray The Polatis OST family of products set the industry benchmark for performance in a compact, fully non-blocking optical switch. The OST is an ideal platform for network-level switching, given its ultra-low loss, fast switch speed, and high reliability

RECTIFIER DIODE 1000A

Abstract: 2596
Contextual Info: Rectifier Diode SXXHN/HR300 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 300 A 471 A 5200 A 130.20 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS

MT90812AL1

Abstract: TGE-5 EB32
Contextual Info: MT90812 Integrated Digital Switch IDX Advance Information Mar 2011 Features • • • • • • • • • • • • • • • • • • MT90812AP MT90812AL MT90812APR MT90812AP1 MT90812AL1 MT90812APR1 192 channel x 192 channel non-blocking switching

Contextual Info: SB 1660 SCHOTTKY DIE SPECIFICATION General Description: 60 V 16 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage

BT139

Abstract: bt139-600 application circuit of BT139 bt139600 bt139 Application bt139 600
Contextual Info: TO -22 0A B BT139-600 4Q Triac Rev. 05 — 24 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high

BT138-600

Contextual Info: BT138-600 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

ignitor

Contextual Info: MKP1V120 Series Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

Contextual Info: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm

MIMMD100E180X

Abstract: E72873
Contextual Info: MIMMD100E180X 1800V 100A Rectifier Module RoHS Compliant Features • Package with screw terminals · Isolation voltage 3000 V~ · Planar passivated chips · Blocking voltage up to 1800 V · Low forward voltage drop · UL registered E72873 Applications · Supplies for DC power equipment

r60 mkt

Abstract: 3330-6-R60IF r60 mkt 400 A r60 mkt 400 22 CAPACITOR R60II R60PF r60er5100 1470 LM R60PR4150 capacitor polyester mkt 400v
Contextual Info: Loose R60 MKT Series Taped METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Fig. 2 Fig.1 Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.: AUTOMOTIVE . PRODUCT CODE: R60

40N120

Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
Contextual Info: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings

MB16100

Abstract: CX 1213 8TQ100S S5834 cx 3120
Contextual Info: MB16100 SCHOTTKY DIE SPECIFICATION Revision 2 9/24/1999 General Description Low Ir 100V 15A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 50 mA Maximum Instantaneous Forward Voltage @ 15 Amperes, 25 0 @

capacitor wima mks 4

Abstract: WIMA MKS 3 wima mks 4 polyester wima 0,047 mks 4 630 wo 400 WIMA mkp wima MKS-4 WIMA MKP 4 wima 2.2 uF WIMA MKS 4 wima 0.12 UF
Contextual Info: D WIMA MKS 4 Metallized Polyester PET Capacitors PCM 7.5 mm to 37.5 mm Special Features Electrical Data ˜ High volume/capacitance ratio ˜ Self-healing ˜ According to RoHS 2002/95/EC Typical Applications For general DC-applications e.g. ˜ By-pass ˜ Blocking

MB1045

Abstract: MR2545CT MB104 MBR2535CT MBR3045CT s5633 MR2545
Contextual Info: MB1045 SCHOTTKY DIE SPECIFICATION Revision 4 5/25/2000 General Description Low Ir 45V 10A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.2 mA Maximum Instantaneous Forward Voltage @ 10 Amperes, 25 0 @

SB840

Abstract: SR2040 SRA1020 SRA820 SRA840 SBG2030-2045CT 2045ct
Contextual Info: SB840 SCHOTTKY DIE SPECIFICATION Revision 4 1/20/2001 General Description Std Vf 40V 8A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.3 mA Maximum Instantaneous Forward Voltage @ 5 Amperes, 25 0 @ @ 8 Amperes, 25

BT151S

Abstract: BT151S-500L BT151S-650R BT151S-500R BT151S-650L BT151S-800R
Contextual Info: BT151S series L and R Thyristors Rev. 05 — 9 October 2006 Product data sheet 1. Product profile 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features • High thermal cycling performance ■ High bidirectional blocking voltage