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    BJT BF 331 Search Results

    BJT BF 331 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2863DGKEVM
    		Texas Instruments Evaluation module for OPA2863 very low-power BJT-input, wide-supply range, RRIO high-speed op amp Visit Texas Instruments

    BJT BF 331 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7915 datasheet

    Abstract: 2SA1576UB
    Contextual Info: SPICE PARAMETER 2SA1576UB by ROHM TR Div. * Q2SA1576UB PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1576UB PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915


    Original     		2SA1576UB Q2SA1576UB 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 datasheet 2SA1576UB PDF

    Q2SA1037AK

    Abstract: 2SA1037AK bf 331 331 transistor
    Contextual Info: SPICE PARAMETER 2SA1037AK by ROHM TR Div. * Q2SA1037AK PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1037AK PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915


    Original     		2SA1037AK Q2SA1037AK 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 2SA1037AK bf 331 331 transistor PDF

    bf 331

    Abstract: 2SA1576A Q2SA1576A 331 transistor 7915 DATASHEET 7915 transistor 7915 8035 BJT BF 331 transistor 331
    Contextual Info: SPICE PARAMETER 2SA1576A by ROHM TR Div. * Q2SA1576A PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1576A PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2


    Original     		2SA1576A Q2SA1576A 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 bf 331 2SA1576A 331 transistor 7915 DATASHEET 7915 transistor 7915 8035 BJT BF 331 transistor 331 PDF

    UMZ1N

    Abstract: 7915 BJT BF 167
    Contextual Info: SPICE PARAMETER UMZ1N * QUMZ1N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ1N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original     		000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 UMZ1N 7915 BJT BF 167 PDF

    0449

    Contextual Info: SPICE PARAMETER IMZ2A * QIMZ2A_NPN BJT model * Date: 2006/11/30 .MODEL QIMZ2A_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original     		000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 0449 PDF

    BJT BF 331

    Contextual Info: SPICE PARAMETER FMY4A * QFMY4A_NPN BJT model * Date: 2006/11/30 .MODEL QFMY4A_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original     		000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 BJT BF 331 PDF

    QUMZ2N_NPN model

    Abstract: BJT BF 167
    Contextual Info: SPICE PARAMETER UMZ2N * QUMZ2N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ2N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original     		000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 QUMZ2N_NPN model BJT BF 167 PDF

    BJT BF 167

    Contextual Info: SPICE PARAMETER UMY1N * QUMY1N_NPN BJT model * Date: 2006/11/30 .MODEL QUMY1N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original     		000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 BJT BF 167 PDF

    7915

    Abstract: 7915 DATASHEET 331 transistor bf 331 transistor bjt 331 7915 transistor BJT BF 331 2SA2029 8035 bf 328
    Contextual Info: SPICE PARAMETER 2SA2029 by ROHM TR Div. * Q2SA2029 PNP BJT model * Date: 2006/11/30 .MODEL Q2SA2029 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2


    Original     		2SA2029 Q2SA2029 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 7915 DATASHEET 331 transistor bf 331 transistor bjt 331 7915 transistor BJT BF 331 2SA2029 8035 bf 328 PDF

    UMF28N

    Contextual Info: SPICE PARAMETER UMF28N * QUMF28N PNP BJT model * Date: 2006/11/30 .MODEL QUMF28N PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035 + RC=1.0862


    Original     		UMF28N QUMF28N 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 UMF28N PDF

    Q2SA1774

    Abstract: 7915 2SA1774 331 transistor BJT BF 331
    Contextual Info: SPICE PARAMETER 2SA1774 by ROHM TR Div. * Q2SA1774 PNP BJT model * Date: 2006/11/30 .MODEL Q2SA1774 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2


    Original     		2SA1774 Q2SA1774 000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 2SA1774 331 transistor BJT BF 331 PDF

    IMT1A

    Abstract: 7915 DATASHEET 78035
    Contextual Info: SPICE PARAMETER IMT1A by ROHM TR Div. * QIMT1A PNP BJT model * Date: 2006/11/30 .MODEL QIMT1A PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035


    Original     		000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 IMT1A 7915 DATASHEET 78035 PDF

    7915

    Abstract: 7915 DATASHEET bf 331 BJT BF 331 transistor bjt 331 7915 transistor 331 transistor UMT1N 8035 TPV 3100
    Contextual Info: SPICE PARAMETER UMT1N by ROHM TR Div. * QUMT1N PNP BJT model * Date: 2006/11/30 .MODEL QUMT1N PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035


    Original     		000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 7915 DATASHEET bf 331 BJT BF 331 transistor bjt 331 7915 transistor 331 transistor UMT1N 8035 TPV 3100 PDF

    331 transistor

    Contextual Info: SPICE PARAMETER EMT2 by ROHM TR Div. * QEMT2 PNP BJT model * Date: 2006/11/30 .MODEL QEMT2 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035


    Original     		000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 331 transistor PDF

    7915 datasheet

    Contextual Info: SPICE PARAMETER IMT2A by ROHM TR Div. * QIMT2A PNP BJT model * Date: 2006/11/30 .MODEL QIMT2A PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035


    Original     		000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 7915 datasheet PDF

    331 transistor

    Abstract: 7915 transistor bf 331 transistor bjt 331
    Contextual Info: SPICE PARAMETER IMT3A by ROHM TR Div. * QIMT3A PNP BJT model * Date: 2006/11/30 .MODEL QIMT3A PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035


    Original     		000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 331 transistor 7915 transistor bf 331 transistor bjt 331 PDF

    331 transistor

    Abstract: 7915 transistor BJT BF 331 7915 bf 331 transistor 331
    Contextual Info: SPICE PARAMETER UMT2N by ROHM TR Div. * QUMT2N PNP BJT model * Date: 2006/11/30 .MODEL QUMT2N PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035


    Original     		000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 331 transistor 7915 transistor BJT BF 331 7915 bf 331 transistor 331 PDF

    bf 331

    Abstract: 331 transistor 7915 transistor BJT BF 331 transistor 331
    Contextual Info: SPICE PARAMETER EMT3 by ROHM TR Div. * QEMT3 PNP BJT model * Date: 2006/11/30 .MODEL QEMT3 PNP + IS=70.000E-15 + BF=266.38 + VAF=50.700 + IKF=.27914 + ISE=70.000E-15 + NE=1.7618 + BR=1.8730 + VAR=100 + IKR=2.0006 + ISC=270.82E-12 + NC=1.7915 + RE=.2 + RB=7.8035


    Original     		000E-15 82E-12 937E-12 613E-12 92E-12 28E-9 bf 331 331 transistor 7915 transistor BJT BF 331 transistor 331 PDF

    BJT BF 331

    Abstract: BF 331 50e3
    Contextual Info: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108


    Original     		NESG2021M05 429e-15 31e-3 324e-15 09e-3 100e-18 50e-3 9e-15 4e-15 4e-12 BJT BF 331 BF 331 50e3 PDF

    LB 122 transistor To-92

    Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)


    Original     		NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635 PDF

    transistor NEC D 882

    Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION


    OCR Scan     		NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55 PDF

    NE856

    Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e


    Original     		NE856 NE856 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600 PDF

    BJT BF 331

    Abstract: NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)


    Original     		NE856 NE85600 24-Hour BJT BF 331 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630 PDF

    973-120

    Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
    Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST


    Original     		NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 973-120 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006 PDF