BJ 22 Search Results

ESC-11

Contextual Info: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BT -11 I BJ/BJ8/BN/BN8/BNK-11 Fully Mated Band† M83723/95 / M83723/96 M83723/97 / M83723/98 BJ/BJ8/BN/BN8/BNK-12 BACC63CM Shell Size J Coupling Thread Class 2A EN2997( )6 BT( )/BJ( )-12 † When fully mated with receptacle this band will be

y5v 104z sec capacitor

Abstract: Y5V 104Z sec LMK107BJ474K LMK316BJ335 lmk316f226z Y5V 104Z 200C2 M05 SMD LMK316F106Z LMK550F107ZM
Contextual Info: HIGH CAPACITANCE MULTILAYER CERAMIC CAPACITORS Ni ELECTRODE BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F FEATURES YThe use of Nickel(Ni) as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

sanyo electrolytic capacitors CE

Abstract: sanyo capacitor
Contextual Info: Surface Mount Type Aluminum Electrolytic Capacitors CE-BJ Series Surface Mount Type, Super low profile, 3.25mm height This series is one size shorter than CE-BE 3.9mm in height. SANYO is first to release 3.25mm height. Solvent proof within 2 minutes . CE-BJ

BJM-12

Abstract: 0179 0176
Contextual Info: BJ Jumper bar Use the BJ jumper bar to connect consecutive and nonconsecutive terminal blocks with the same spacing. Two types of jumper bars are available : an assembled unit and a nonassembled unit. Both jumper bars include a metal tube which makes contact with the terminal

tc511000

Abstract: TS0P24-P-Q616 tc511000bp tc511000b 511000 dram
Contextual Info: 1,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC511000BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: 1,048,576 W O RD x PRELIMINARY 1 BIT DYN AM IC RAM D E SC R IP T IO N The TC511001BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

Contextual Info: Surface Mount Type Aluminum Electrolytic Capacitors CV-BJ Series Surface Mount Type Miniature, Super low profile 3.25mm height CV-BJ series is to change height from 3.9mm of CV-BE which is a conventional low profile surface mount type capacitor, to be a lower profile 3.25mm which is the first time in the capacitor industry.

Contextual Info: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle Square Flange Receptacle, Threaded Coupling BT -17 I BJ/BJ8/BN/BN8/BNK-17 BACC63CN B BSK-17 BT( )/BJ( )-17 J Coupling Thread Optional 360° Accessory Teeth ESC10( )0 ESC11( )0 .250 Max. 6.35 Max. HTK/HNK/HSK-17

Contextual Info: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536

K25VJ85C

Abstract: K55VJ85C FMMG 2
Contextual Info: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR BJ OPERATING TEMP. F BJ K25VJ85C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C 特長 FEATURES Y4 circuits in 3216 package allows higher placement density and efficiency YThe capacitance in each circuit, F or B dielectric, is 1AF

GMK316

Abstract: FCX-01
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

GMK325

Abstract: fcx0
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

taiyo yuden umk

Abstract: JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

Contextual Info: 2 6 2 ,1 4 4 W O R D x4 PRELIMINARY B IT D Y N A M IC R A M DESCRIPTION The TC514258BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words oy 4 bits. The TC514258BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: y 2 6 2 ,14 4 W ORD PRELIMINARY x 4 BIT D Y N A M IC RAM D ESC R IP TIO N The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

JMK212BJ105K

Abstract: LMK107BJ334 LMK107BJ474 JMK212F475ZD
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

Contextual Info: 1 ,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC R A M DESCRIPTION 511000 The TC BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

p40x

Abstract: 316TYPE f0035
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

Contextual Info: PART NO. GUIDE-POST 20031-»»*E—#1F YES 20031—*E—#2F YES 20031-* *E-#3F NO 20031—*E~#4F NO RETAINER YES NO YES NO DATUM PIN MARK TUBE PACKAGE EMBOSS TAPING 2 POS. i* 0£ -l^h |fi}- -Bj&- -0- 1 1 1 Elh 29 X 4jL -BJ-4 -fljP- PH M 20033 -# # -ts71

256KDRAM

Abstract: st A122 a124 es
Contextual Info: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

250v 104 J capacitor

Contextual Info: 中高耐圧積層セラミックコンデンサ MEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ K25VJ85C X5R K55VJ85C X7R K55VJ125C 特長 FEATURES Y内部電極にNi金属を使用しておりマイグレーションが発生せず、高信頼

4040l1

Contextual Info: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF

a231 ax hen no

Abstract: BFT te 04 A225
Contextual Info: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.