BIPOLAR PROM PROGRAMMING SPECIFICATION Search Results

10P256

Abstract: PROM32 10P256F
Contextual Info: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics Generic IV Programming procedure. The

27S291

Abstract: 27s191 AM27LS191 Am27S
Contextual Info: Am27S190/27Sl91/PS191/LS191 Am 27S290/27S291 /PS291 /LS291 16,384-Bit 2048x8 Bipolar PROM Piatinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming yields (typ > 98%) Voltage and temperature compensated providing ex­

Contextual Info: 10P016 16 K—Bit ECL Bipolar PROM Objective Specification Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 10P016 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics Generic IV Programming procedure. The

AM27S29A/BRA

Contextual Info: ADV MICRO IME 0 I 0257550 0007753 3 | MEMORY a Am27S29/Am27S29A/Am27S29SA Advanced Micro Devices 4,096-Bit 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses • High programming yield

VXXXX

Contextual Info: Am27S55 32,768-Bit 4 0 9 6 x 8 Bipolar Registered PROM ADVANCE INFORMATION User-programmable for Asynchronous Enable, Synchro­ nous Enable, Asynchronous Initialize, or Synchronous Initialize Platinum-Silicide fuses guarantee high reliability, fast programming, and exceptionally high programming

27S33

Abstract: AM27S33 AM27S33A AM27S32 Am27S32/27S33
Contextual Info: Am27S32/27S33 Am27S32/27S33 4,096-Bit 1024x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable,ultra-fast programming Platinum-Silicide fuses High programming yield • Low-current PNP inputs • High-current open-collector and three-state outputs

27s21

Contextual Info: Am27S20/21 Am27S20/21 1,024-Bit 256 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • Low-current PNP inputs • High-current open-collector and three-stat

27S20

Abstract: AM27S20 Am2910
Contextual Info: Am27S20/21 Am27S20/21 1,024-Bit 256 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast fuses High programming yield e Low-current PNP inputs programming Platinum-Silicide• High-current open-collectorand three-state outputs

am27s19

Abstract: am27s18 27S19SA
Contextual Info: Am27S18/19 256-Bit 32 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • Ultra high speed Highly reliable, ultra-fast programming Platlnum-Silicide fuses High-programming yield • • • Low-current PNP inputs High-current open collector and three-state outputs

AM27S29

Abstract: 512x8 PROM AM27S29/BRA AM27S29A AM27S29SA AMD PROM Selector guide
Contextual Info: a Am27S29/Am27S29A/Am27S29SA Adva^ 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-last programming Platinum-Silicide fuses • High programming yield • Low-current PNP inputs • High-current open-collector and three-state outputs

AM27S29

Abstract: KS000010 AM27S29A AM27S29SA CERAMIC FLATPACK 20pin AM27S29PC am27s29bra
Contextual Info: M^ 0 Am27S29/Am27S29A/Am27S29SA 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-cotlector and three-state outputs

AMD Bipolar PROM programming

Abstract: AMD Prom Device generic prom programming AMD PROMS
Contextual Info: Guide to the Analysis of Programming Problems Advanced Micro Devices by A M D Bipolar M em ory Product Engineering INTRODUCTION Advanced Micro Devices' Generic Series of Programmable Read Only Memory PROM circuits have been designed to provide extremely high programming yields. Available pro­

AM27S13

Abstract: 512 x 4 bipolar prom am27s13adc
Contextual Info: Am27Sl2/13 Am27S12/13 2,048-Bit 512 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

27s29

Abstract: AM27S29APC am27s28
Contextual Info: Am27S28/27S29 Am27S28/27S29 4,096-Bit 5 1 2 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Speed Highly reliable, ultra-fast programming Platinum-Sillcide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

dk qs

Abstract: CLTO20
Contextual Info: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,

kontron mpp

Abstract: MPP-80
Contextual Info: Am27LS18 • Am27LS19 Low -Pow er Schottky 256-Bit Generic Series Bipolar PROM DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • High Speed - 55ns max commercial range access time • Excellent performance over full MIL and commercial ranges • Highly reliable, ultra-fast programming PlatinumSilicide fuses

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

Contextual Info: Am27S28/27S29 Am27S28/27S29 4,096-Bit 5 1 2 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Speed • Low-current PNP inputs Highly reliable, ultra-fast programming Platmum-Silicide • High-current open-collector and three-stat fuses • Fast chip select

semiconductor c243

Abstract: CY7C243 CY7C244 C2431 c243 c2437 C2432 D4580
Contextual Info: CY7C243 CY7C244 4K x 8 Reprogrammable PROM D Features The CY7C243 and CY7C244 are plugĆin replacements for bipolar devices and offer the advantages of lower power, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requireĆ

Contextual Info: WS57C49B MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S49 and MB7144 Bipolar PROMs — 45 ns • Low Power Consumption Immune to Latch-Up • Fast Programming — Up to 200 mA • DESCSMD 5962-87515

smd marking WS

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming

Contextual Info: WS57C49C PRELIMINARY HIGH SPEED 8K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S49 and MB7144 Bipolar PROMs • Immune to Latch-UP — 35 ns • Low Power Consumption • Fast Programming • DESC SMD 5962-87515

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — 45 ns • Low Power Consumption • Immune to Latch-UP • Fast Programming — Up to 200 mA

smd marking 25J

Abstract: WS57C291C-45TI WS57C291C-35TMB MARKING 25J
Contextual Info: WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t CS = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming