BIPOLAR JUNCTION TRANSISTOR Search Results

ccb transistor

Abstract: HP4279A Bipolar Junction Transistor "parasitic capacitance" coax C22E AN024
Contextual Info: Application Note No. 024 Discrete & RF Semiconductors Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of the three ports of the transistor.

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

Semefab Scotland

Abstract: semefab
Contextual Info: PPS 159 High Voltage Bipolar Process Preview Datasheet Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 159 is an industry standard, very robust, junction isolated, bipolar process. It features vertical NPN and lateral PNP Bipolar transistors, implanted resistors and

2052-1215-00

Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low

FMMTL717TA

Abstract: FMMT723TA FMMT560TA
Contextual Info: DATE: 24th September, 2010 PCN #: 2024 PCN Title: Qualification of Additional Wafer Fabrication Facility for PNP Bipolar Junction Transistors and Qualification of Alternate Die Attach Material for SOT223 Packaged Products.

100HZ

Abstract: 10KW 2SA1235A
Contextual Info: RECTRON 2SA1235A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.2 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC

BU931Z

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON „ FEATURES * High Operating Junction Temperature * High Voltage Ignition Coil Driver * Very Rugged Bipolar Technology „ INTERNAL SCHEMATIC DIAGRAM 1 TO-3P „ ORDERING INFORMATION

motorola bjt

Abstract: mrf9411 ic3 pin diagram MDC5000T1 MRF941 MARKING E5 SOT-143 application notes BJT transistor test
Contextual Info: MOTOROLA Order this document by MDC5000T1/D SEMICONDUCTOR TECHNICAL DATA MDC5000T1 SMALLBLOCK Low Voltage Bias Stabilizer • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors SILICON SMALLBLOCK INTEGRATED CIRCUIT

ic 4440

Abstract: BU941ZPFI v30010 BU941ZP JESD97 NPN POWER DARLINGTON TRANSISTORS NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 BU941ZPFI(575B)
Contextual Info: BU941ZP BU941ZPFI High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged bipolar technology ■ Built in clamping Zener ■ High operating junction temperature ■ Fully insulated package U.L. compliant for easy mounting

Buffer Amplifier Ghz

Abstract: THM2004J
Contextual Info: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

THM2003J

Abstract: Tachyonics
Contextual Info: PRELIMINARY Wideband Linear Amplifier THM2003J SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

transistor T04

Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
Contextual Info: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

Contextual Info: FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range

125OC

Abstract: MMBT2907LT1
Contextual Info: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range

100MHZ

Abstract: FMMT491
Contextual Info: RECTRON FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range

bu941zp

Abstract: Electronic package to218 BU941ZPFI BU941ZFI High voltage ignition coil driver
Contextual Info: BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS n n n n VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING Figure 1: Package

2SA1037

Contextual Info: RECTRON 2SA1037 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : -0.15 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range

2sc5344

Abstract: TRANSISTOR 2sc5344
Contextual Info: RECTRON 2SC5344 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 35 V * Operating and storage junction temperature range

100MHZ

Abstract: FMMT4124
Contextual Info: RECTRON FMMT4124 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

MJE 2160 N

Abstract: 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1
Contextual Info: Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter

bu941zp

Abstract: automotive transistor coil ignition ignition coil npn power darlington 637 ZENER High voltage ignition coil driver BU941Z BU941ZPFI TO3 HEATSINK morocco Electronic package to218
Contextual Info: BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES FULLY INSULATED PACKAGE U.L.

Contextual Info: £ = T SGS-THOMSON NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: . MOTOR CONTROL

100MHZ

Abstract: BFS20
Contextual Info: RECTRON BFS20 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.25 W (Tamb=25OC) * Collector current ICM : 0.025 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

BUV98AV

Contextual Info: £ = T SGS-THOMSON NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: . MOTOR CONTROL