BH RN TRANSISTOR Search Results

bly91a

Contextual Info: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

BFQ43

Abstract: BFQ43S lyp 809 BLW31 TRANSISTOR A1t
Contextual Info: b^E » N AMER PHILIPS/DISCRETE • ^53^31 0DHÔ714 ODD ‘' BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar e pitaxial transistors intended fo r use in class-A, B o r C operated m ob ile tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he transistors are resistance stabilized and guaranteed to w ith ­

ferroxcube wideband hf choke

Abstract: BLV99 002im3
Contextual Info: N AMER PHI LIP S/DISCRETE bTE D Jl • ^53*131 □ OE'ilfl'i 40Û BLV99 U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r p rim a rily intended fo r use as a driver-stage in base stations in the 90 0 M H z co m m u n ica tio n s band.

BCX71H

Contextual Info: BCX71H PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

BLV45/12

Abstract: sot119 blv45-12
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • ^53^31 □DScîGH2 STb I IAPX BLV45/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in m ob ile rad io tra n sm itte rs in th e 175 MHz co m m u n ica tio n s band.

MCA443

Abstract: 70cN
Contextual Info: N AMER bTE D PHILIPS/DISCRETE • bbS 3ci31 D02ôûbE 744 I BLU60/28 UHF POWER TRANSISTOR NPN silico n planar e p ita xia l tran sisto r p rim a rily intended fo r use in radio tran sm itte rs in th e 470 MHz co m m u n ica tio n s band. Features • M ulti-base stru ctu re and e m itte r ballasting resistors fo r an o p tim u m tem perature p ro file

equivalent 2N2907A

Abstract: equivalent for 2N2907A PNp Transistor 2N2907A die equivalent transistor 2N2907a 2N2907A 2N5796 HCT740 2N2907A surface mount
Contextual Info: OPTEK Product Bulletin HCT740 May 1993 Surface Mount Dual PNP Transistor Type HCT740 Features • Surface mountable on ceramic or printed circuit board • Miniature package to minimize circuit board area required • Electrical performance similar to 2N2907A

Contextual Info: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

BFS22A

Abstract: J22 transistor 27Z60 BFS22
Contextual Info: J b^E J> N AUER PHILIPS/DISCRETE bbS3^31 DDSÔ7BE Ifi? I IAPX BFS22A V.H.F. POWER TRANSISTOR N-P-N e p itaxia l planar tra n sisto r intended fo r use in class-A, B and C operated m obile, industrial and m ilita ry tra n s m itte rs w ith a supply voltage o f 13,5 V . The tra n sisto r is resistance stabilized. Every tra n ­

irg4bc30ud

Abstract: BH rn transistor
Contextual Info: International Iö R Rectifier PD 9.1453A IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

21-030-J

Contextual Info: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN.

TT 2222

Abstract: transistor tt 2222 ic TT 2222 BLW60C BTB 600 BR BD137 z670 Philips film capacitors 27 pf trimmer 3-30 pf Philips film capacitors polystyrene
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSaTBl G D S ^ S M TSG I IAPX B L W 60C I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itax ial transistor intended fo r use in class-A, B and C operated m o b ile , industrial and m ilita ry tran sm itters w ith a nom inal supply voltage o f 1 2 ,5 V , T h e transistor is resistance stabilized

TRANSISTOR A3

Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
Contextual Info: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial

BLV37

Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
Contextual Info: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain

IH02

Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
Contextual Info: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,

Contextual Info: SE M IC O N D U C T O R TECHNICAL DATA 2N3019SJAN, JTX, JTXV, J A N S 2N3057AJAN, JTX, JTXV, J A N S 2N3700JAN, JTX, JTXV, J A N S CRVSTAIOMCS 2805 Veteran Highway Su»te 14 Ronkonkom* N Y. 1177ii Processed per MIL-S-19500 391 NPN Silicon Sm all-Signal Transistors

afe 1000

Abstract: BSP 17 D AFE1000
Contextual Info: SIEMENS PNP Silicon Darlington Transistors BSP 60 . BSP 62 • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP 50 . BSP 52 NPN Type Marking Ordering Code (tape and reel) Piti Con) igurat ion 1 2 3 4 Package1*

BH rn transistor

Abstract: ROHM 2SD1733 2sb1241
Contextual Info: Transistors Power Transistor -80V, -1A 2SB1260/2SB1181/2SB1241 current. •E x te rn a l dimensions (Units: mm) 2SB1260 2SB1181 co V oeo = - 8 0 V , to = - 1 A C0.5 / lO 2) Good hFE linearity. 3) 21 6 . 5 ± 0 .2 +0.2 2 3 ~ 0.1 0 .5 + 0 .1 c + 0 .2 5 - 0 .1

Contextual Info: 4 0E ROHM CO LTD hÿ T Û S Ô 'm D OÛDSSTO 4 HRHM 2SB1212 £ /Transistors " 7=27-/ ? X £ 0$ * y y J i s 7 ° l s - ± M P N P V ' j : \ > V y > v 7 , ^ 4,1 :ftÍH1ÍSÜ/Med¡um Power Amp. Epitaxial Planar PNP Silicon Transistor • ¿i-Jf2\t'}£I§]/'0imensions Unit : mm

OC139

Contextual Info: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,

MRF325

Abstract: BH rn transistor
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON

RTO BH

Contextual Info: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,

transistor marking bh ra

Abstract: TRANSISTOR bH
Contextual Info: BCX71H PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4 - MAY 1998_ FEATURES * 6 A Peak pulse c u rre n t * E xce lle n t h FE c h a ra cte ristics up to 6 A pulsed * lo w s a tu ra tio n v o lta g e * lc C ont 2.5A