BH RN TRANSISTOR Search Results

bly91a

Contextual Info: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

irg4bc30ud

Abstract: BH rn transistor
Contextual Info: International Iö R Rectifier PD 9.1453A IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

21-030-J

Contextual Info: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN.

DIODE RECTIFIER BRIDGE SINGLE 55a 600v

Abstract: IRG4PC50UD ir igbt BH rn transistor
Contextual Info: International Rectifier IOR PD -9.1471A IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

IH02

Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
Contextual Info: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,

afe 1000

Abstract: BSP 17 D AFE1000
Contextual Info: SIEMENS PNP Silicon Darlington Transistors BSP 60 . BSP 62 • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP 50 . BSP 52 NPN Type Marking Ordering Code (tape and reel) Piti Con) igurat ion 1 2 3 4 Package1*

Contextual Info: 4 0E ROHM CO LTD hÿ T Û S Ô 'm D OÛDSSTO 4 HRHM 2SB1212 £ /Transistors " 7=27-/ ? X £ 0$ * y y J i s 7 ° l s - ± M P N P V ' j : \ > V y > v 7 , ^ 4,1 :ftÍH1ÍSÜ/Med¡um Power Amp. Epitaxial Planar PNP Silicon Transistor • ¿i-Jf2\t'}£I§]/'0imensions Unit : mm

OC139

Contextual Info: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,

RTO BH

Contextual Info: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,

transistor marking bh ra

Abstract: TRANSISTOR bH
Contextual Info: BCX71H PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4 - MAY 1998_ FEATURES * 6 A Peak pulse c u rre n t * E xce lle n t h FE c h a ra cte ristics up to 6 A pulsed * lo w s a tu ra tio n v o lta g e * lc C ont 2.5A

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )

tpv394a

Abstract: RF TV TRANSMITTER tv transmitter amplifier circuit arco 404 Arco 423 VHF transmitter circuit arco 403
Contextual Info: 4bE D flOTOROLA SC XSTRS/R F MOTOROLA • I SEMICONDUCTOR ^ b3b?254 OG'iSBll 4 ■ HOTb T=-53-OB TECHNICAL DATA The RF Line TPV394A VH F Linear Power Transistor . . . d e s ig n e d s p e c ific a lly fo r ban d III T V tra n s p o s e rs a n d tra n s m itte r a m p lifie rs. The

Contextual Info: MARKTECH IN TE RN ATI ONAL 5799655 M A R K T E C H INTERNATIONAL ~fl7 DE I STTTbSS GODOIED Ô7D 00120 D M T P C 6 3 1 0 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR • DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR

TRANSISTOR BH RW

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A M A Y 1998 F E A TU R E S * C o m p a ct package * L o w o n s ta te lo s s e s * L o w d r iv e re q u ire m e n ts * O p e ra te s u p to 7 0 V s u p p ly * 1 A m p c o n tin u o u s ra tin g

2SA1038

Abstract: MQE 001 2SA1039 E390 2SC2390 2SC2389 2SC238 "transistors Vceo" 2SC2389S
Contextual Info: ROHM CO LT D 7>y* h* . 40E 3> • TfiSö'i'n 0 0 0 5 4 4 4 £ /Transistors “ 4 HIRHM 2SA1038/2SA1039 ’— — — — — — — X | f ^ ^ '> 7 7 ; i/ 7 V - ^ P N P '> U 3 > — — ■yz,2 1 -O 9 b?>yx$ iHiifŒ'i&JiÔji&'ISiii WiMfeffl/High Voltage Low Freq.

philips blx15

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

TC9174P

Abstract: tc9174 tc9173p tc9180n TC9173 25c1815 TC9190N PC10 TC9319F TC9189
Contextual Info: TOSHIBA TC9319F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9319F Sin gle Chip DTS M icrocontroller DTS-10 The TC9319F is a 4bit CMOS microcontroller for single chip digital tuning system with built-in prescaler, PLL and LCD driver. The CPU has 4bit parallel addition/subtraction (Al, SI

BLY94

Abstract: VQE 13E philips Trimmer 60 pf transistor 42t vhf power transistor 50W Wf VQE 23 F BLY94 application notes film dielectric trimmer WF VQE 23 D WF VQE 23 e
Contextual Info: PHILIPS INTERNATIONAL bSE ß • 7110äSb> DGL3bSS 5^3 ■ PHIN B LY 94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

Contextual Info: International IggRectifier P D - 9.1022 IRGPC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

HF 331 transistor

Contextual Info: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

BLX93A

Abstract: high power npn UHF transistor BLX93 T-33-07 TRANSISTOR D 471 IEC134 47pH
Contextual Info: PH IL IR-S INTERNATIONAL MIE D Q 71LOä2b GG27àM7 3 B PHIN BLX93A MA IN TE N AN CE TYPE ^ - T -3 3 -Û 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

2SC2134

Abstract: RF NPN POWER TRANSISTOR 60w vhf power transistor 50W
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2134 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm R1 applications.