BH RC Search Results

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator BH 1 8FB1WHFV TYPE Fig.1 Plastic Mold Fig. 2 Fig. 3 - 8 Fig.21 PACKAGE BLOCK TEST CIRCUIT APPRI CAT ION CIRCUIT FUTURES # # # # # # # # # Output Voltage Accuracy 1.8V±25mV

Contextual Info: r n RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. m COPYRIGHT LOC ALL RIGHTS RCSCRVCO. BT TYCO ELECTRONC5 CORPORATION. AD REVISIONS OIST 39 LTR DESCRIPTION APVO DATE REV PER 0 G 3 C - 0 4 0 3 - 0 0 BH JRO 180CT00 D D .053 MAX 2 PLACES - B

Contextual Info: BH Electronics Medical 10base T/Ethernet Isolation/Filter Module • Part Number: 501-0618 • Provides intrinsic isolation with 4 mm creepage and clearance between primary and secondary • Low profile DIP design Insertion Loss: DC Resistance: High Voltage Test:

l400bb70v

Abstract: L400BB12VC
Contextual Info: AMD3 Am29LV400B 4 Megabit 512 K X 8-BH/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

VR BH RC

Contextual Info: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged

Diagram IC Lm 2476

Abstract: s5x diode AD572 AD572A AD572AD AD572B AD572BD AD572S AD572SD
Contextual Info: A N A LO G DEVICES 12-Bit Successive Approximation Integrated Circuit A/D Converter AD572* FEATURES PERFORMANCE True 12-BH Operation: Max Nonlinaarity <±0.012% Low Gain T.C.: < ±15 ppm/*C AD572B Low Powar: 800 mW Fast Conversion Tima: < 25 |U Monotonic Faadback OAC Guarantaas No Missing

AD560

Abstract: AD559
Contextual Info: A N A LO G DEVICES 12-Bit Successive Approximation Integrated Circuit A/D Converter AD572* FEATURES PERFORMANCE True 12-BH Operation: Max Nonlinaarity <±0.012% Low Gain T.C.: < ±15 ppm/*C AD572B Low Powar: 800 mW Fast Conversion Tima: < 25 |U Monotonic Faadback OAC Guarantaas No Missing

Thomson capacitors lcc

Abstract: thomson Metallized Polyester Film Capacitor Thomson-CSF LCC capacitors LCC capacitors BF 250v 104 K capacitor Thomson capacitors bf thomson-csf tantalum capacitors Thomson lcc film capacitors diode 10000v Thomson-CSF tantalum
Contextual Info: FILM AND TANTALUM CAPACITORS SELECTION GUIDE Capacitance % ∆ + 15 + 10 +5 Metallized polyester film capacitors BH BO BT/BC BK CPM-N CPM-N CPM 50 CPM 85 CPM 85 Chip General Use High Temperature High Temperature 55 / 100 / 56 55 / 100 / 56 55 / 125 / 56 55 / 125 / 56

Contextual Info: PRELJM iN A Rv AMD3 Am29F800B 8 Megabit 1 M x 8-BH/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: r n 4 3 THIS DRAWING IS UNPUBLISHED. 7 RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 2 ,19 LOC ALL RIGHTS RESERVED. DIST REVISIONS 00 AD p LTR C DESCRIPTION REV PER OG3C-0495-00 DATE DWN APVD 19DEC00 BH JO -0.51 2.11- [ .083] D -2.54 [ .020]

Thomson capacitors lcc

Abstract: 2.2 K 400v ac capacitor thomson capacitor thomson polypropylene film capacitors LCC capacitors BF metallized capacitor 470 uF 400v Thomson-CSF LCC capacitors Thomson-CSF POLYESTER capacitors Thomson capacitors bf nfc chip
Contextual Info: FILM AND TANTALUM CAPACITORS SELECTION GUIDE Capacitance % ∆ + 15 + 10 +5 Metallized polyester film capacitors BH BO BT/BC BK CPM-N CPM-N CPM 50 CPM 85 CPM 85 Chip General Use High Temperature High Temperature 55 / 100 / 56 55 / 100 / 56 55 / 125 / 56 55 / 125 / 56

Contextual Info: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.

BCX71JR

Abstract: CE 65 M BCX71GR power 22E BAY63 BCX71 BCX71G BCX71H BCX71HR BCX71J
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 – MARCH 2005 PARTMA RKING DETAIL – BCX71 BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK E C B SOT23 ABSOLUTE MA XIMU M RATINGS.

Contextual Info: 10 < ° — XRterm 10 10-Bit Vini- ADC M U “ DemUX Clock Management and AutoSync Output Buffers X bH 10 VinQ+ o— Rterm I - * - ] / - 1,0 T/i—I 10-Bit ADC Demux 10 VinQCLK+ o— Rterm CLKRCLK+ o— Rterm Control/Status and Other Logic u Control Pins

Contextual Info: Communication ICs Read/Write Amplifier for FDD BH6627FS The BH 6 6 2 7 FS is a 4-mode read/write 1C designed for floppy disk drives. This 1C has an internal active filter that can be set to any of multiple settings according to transfer rate, and internal sw itches for density and inner edge/outer

Contextual Info: 3.96mm 0.156" Pin Housing FEATURES BH Series SPECIFICATIONS 2 -2 0 C ircuits Current Roting: 3A AC DC Post: Brass. C o j>p e r-U n d e rc o o tc d . Volto^e Rot 1* 9 * T«mjM»ro1ure Ror.ge 2 S 0 V AC W o ilm u m C ontoct Resistance- In lio l V o *j c / 1 0 m o h m mox

Contextual Info: m olex PRODUCT [1= jS Æ I bH Thi: i2 o LANGUAGE m olex SPECIFICATION JAPANESE ENGLISH SCOPE] specification c o v e rs the 1.27mm M ddO O ^ K O ! ! ! P R O D U C T N AM E PITC H AND M EM ORY PART CARD CO NNECTO R series NUMBER] HU Ss M nn O, Product Name

Contextual Info: 7Rbm42 L7E D 0017103 T12 p r e lim in a r y isuck CMOS MASK ROM KM23V16000A G SAM S UN G E L E C T R O N I C S INC 16M-BH (2M X 8 / 1 M x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x8(byte mode) 1,048,578 x 16(word mode)

JS84

Contextual Info: 3.96mm 0.156” Pin Housing FEATURES BH Series SPECIFICATIONS 2 - 2 0 C ircu its Current Rating: 3A AC DC Post: Voltage Rating: 250V AC M axim um T em perature Range: - 2 5 ’ 0 + 9 0 'C Initial V o lu e /1 0 m oh m max A fte r E nvironm ental Testing / 2 0 m ohm m in

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:

Contextual Info: SAttSUNG E L E C T R O N I C S INC b7E » • 7 T b m t4E ODlTlDfl 5T4 I SPICK C M O S MASK R OM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using

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htrw

Contextual Info: FGK?>L FWfS^ Gj[VW KW_[Ua`VgUfad ?[W^V >XXWUf LdS`e[efad <aa^FGKo >0 0*N 0*N <aa^FGKo >0 HaiWd LdS`e[efad BHj0*J-2*>0 =SfS KZWWf JWh ,(. ?[`S^ B`Vgefd[S^ " Fg^f[_Sd]Wf 0*N <aa^FGKo >0 HaiWd LdS`e[efad BHH0*J-2*>0& BH90*J-2*>0& BH=0*J-2*>0 8TaR`X_bX^]

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^b414S 0 0 17 0 0 3 031 « S r iG K PRELIMINARY KM23V4001 B G CMOS MASK ROM 4M-BH (512K x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23V4001B is a fully static m ask program m able ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.