BG2011SM Search Results

BPTM

Contextual Info: H><3 V'-' BG2011SM-B GaAs Integrated Circuit DESCRIPTION: BG2011SM-B is a GaAs Integrated Circuit designed lor Wideband Low Noise Ampfification. See Figures 1 - 1 5 ABSOLUTE MAXIMUM RATINGS: Ta = 25’C Drain to Source Voltage Vds Gate To Source Voltage

BG3013

Abstract: FET 8PIN BG3013F 3182 ROHM fi01
Contextual Info: ROHM CO LT» MDE D PI '- H £ - 1 9 -1 3 EGaAs Devices • Rohm's GaAs devices are available in FETs and integrated circuits fabricated with the GaAs MESFET process, and Hyper FETs utilizing the MBE process. B Hyper FET Hetero Structured InGaAs FET • Ultra-Low Noise Hyper FET

Contextual Info: _ . . . nDHffl GaAs device Absolute maximum ratings Ta=25°C Part No. BG20Î1SM-B Application CATV,DBS IF Electrical characteristics (Ta=25°C ) VDS(V) VGS(V) PT(mW) T c h fC ) PG Typ.(dB) NF Typ.(dB) 6 -4 200 125 10 2.1 •Dimensions •Circuit f(GHz)

RCM2008R

Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88

Contextual Info: GaAs Devices • Hyper FET Hetero Structured InGaAs FET . 6 • Ultra-Low Noise Hyper F E T . 6 ■ RF Integrated • Wide-Band, Low-Noise A m plifiers. 6