BG MARKING Search Results

D 16027 G

Abstract: CKM501 e/SM66-AR-110
Contextual Info: CKM bg/09.06.10 High Security Capacitors with controllable metallized frame layers Type CKS 501-4 BG Replacement for CKM 501-4 BG series Applications Railway Signal Systems High Reliability Circuits Main Characteristics High Reliability Controllable Metallized frame layers

KTX212E

Abstract: MARKING BG bg marking
Contextual Info: SEMICONDUCTOR KTX212E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BG 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BG KTX212E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KTX212U

Contextual Info: SEMICONDUCTOR KTX212U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BG 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BG KTX212U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Thomson-CSF POLYESTER capacitors

Abstract: Thomson-CSF POLYESTER capacitors TPC capacitor polyester 1u 630v Thomson-CSF capacitors Thomson-CSF Thomson-CSF passive components uk ah 102 m capacitor thomson Metallized Polyester Film Capacitor Thomson-csf capacitor Thomson-CSF film capacitors
Contextual Info: Metallized polyester film capacitors BG range - 10 mm to 27.5 mm pitch Contents Characteristics of the metallized polyester film capacitor p. 2 Boxed metallized polyester capacitor BG serie range p. 4 Packaging p. 6 How to order p. 7 Worldwide sales offices

smd marking BG

Abstract: BCX71H BCX71J BCX71K BCX71G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ

Contextual Info: BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P Silicon transistors Marking PACKAGE O UTLINE DETAILS ALL DIM ENSIONS IN mm BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK _3.0_ 2.8 0.14 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE

TSE 151

Contextual Info: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

TG31

Abstract: TLMB3140 TLMBG3100 TLMT3100 TLMTG3100
Contextual Info: TLMB / BG / TG31. VISHAY Vishay Semiconductors High Intensity SMD LED Description This device has been designed to meet the increasing demand for InGaN technology. The package of the TLMB/ TLMBG/ TLMTG31. is the PLCC-2 equivalent to a size B tantalum capacitor .

KTC9018S

Abstract: MARKING SOT23 .BG bg marking
Contextual Info: SEMICONDUCTOR KTC9018S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BGF 2 1 Item Marking Description Device Mark BG KTC9018S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

J-STD-020B

Abstract: VLMB3140 VLMB3140-GS08 VLMB3140-GS18 LED wavelength 440 smd BG 56 S SMD
Contextual Info: VLMB/BG/TG31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave

Si5447DC

Abstract: Si5447DC-T1
Contextual Info: Si5447DC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.076 @ VGS = -4.5 V -4.8 0.110 @ VGS = -2.5 V -4.0 0.160 @ VGS = -1.8 V -3.3 -20 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BG XX Lot Traceability

bn27

Abstract: CPM-85 CPM85
Contextual Info: BN 07/10/15/22/27 CPM-85 – 7.5/10/15/22.5/27.5 BT/BG/BO APPLICATIONS • Commodity Product: • Decoupling with AC or pulse components • High current uses (TV deflection coils) • Capacitive dividers • Energy saving lamps, etc. TECHNOLOGY • Dielectric: Polyester film

.0549

Abstract: marking A02 a02 Transistor rf mje 1827 transistor 139 BF BGA427 GPS05605 Q62702-G0067 transistor NF j1 marking code marking code 8Ff
Contextual Info: SIEM ENS BG A427 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=18.5 dB at 1.8 GHz appl.1 Gain |s21f= 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

Contextual Info: J lL l i a L 5 Bg ml e= NOTE: 1. MATERIAL: HOUSING: LIQUID CRYSTAL POLYMER, GLASS FILLED U L 9 4 V - 0 RATED, COLOR BLACK OR NATURAL. EJECTOR: LIQUID CRYSTAL POLYMER OR OTHER HIGH PERFORMANCE RESINS. GLASS FILLED U L 9 4 V - 0 RATED. COLOR BLACK OR NATURAL

MT52C9005

Contextual Info: AUSTIN SEMICONDUCTOR INC bG E D 'íGOeil? G 0 Q 0 5 5 7 T AG « A U S T MT52C9005 883C 5 1 2 x 9 FIFO I^ IC R O N T M f o - 2 ,5 - 0 3 . MILITARY FIFO 512x9 FIFO AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD (consult factory) • JAN (consult factory)

FA1A4

Abstract: KE marking o-565
Contextual Info: m i f C f t j m P N P JO t : f i r ' > V 3 > ^-ii : mm o'<4 r # i t ( Ri = 10 k.Q, R2 = 10 k£2) 2 . 8 + 0.2 1.5 0.65i§:ls -X o FA 1A 4M Ì n > 7" ij / > 9 U ( T a = 2 5 °C â "to ) Bg. ìjm Fi 3 u ÿ 9 •-c — X tiU'EEE V cb O a v 9 9 •x ; 7 VcEO

infineon marking W1s

Abstract: INFINEON PART MARKING SOT363 T0509 BGA430 GPS05604 VPS05604
Contextual Info: Pre li mi na ry d at a she et , BG A4 30 , Ap ri l 20 01 y BGA430 li m in ar B r oa d B a nd H i gh G ai n L NA P re MMIC W ir el e s s S il i c o n Di s c r e te s N e v e r s t o p t h i n k i n g . Edition 2001-04-24 Published by Infineon Technologies AG,

bg marking

Abstract: murata SAW
Contextual Info: SAW FILTER FOR UMTS BC5 Rx Murata part number : SAFEB881MFL0F55 Package Dimensions Specification Specif ication Item -30 to 85°C Nominal Center Frequency(f c) 1.35±0.05 1.05±0.05 Insertion Loss (869 to 894MHz) Dot Marking(φ0.3) B G (4) 881.5MHz 2.3 dB max.

LTC4442

Abstract: LTC4440-5
Contextual Info: LTC4449 High Speed Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n DESCRIPTION 4V to 6.5V VCC Operating Voltage 38V Maximum Input Supply Voltage Adaptive Shoot-Through Protection Rail-to-Rail Output Drivers 3.2A Peak Pull-Up Current 4.5A Peak Pull-Down Current

LTC4440-5

Abstract: LTC1154
Contextual Info: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current

48V to 12V buck boost converter

Abstract: WSL2512R0250FEA LTC3780EG 100ME100HC 48V DC to 12v dc converter circuit diagram 40 amp CDEP147NP-100MC-125 LTC3722-2 LTC3780 pc power suplly p channel mosfet 100v
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION • The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in