BFT 66 Search Results

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Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
Contextual Info: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­

BFT66

Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Contextual Info: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband

ft66

Abstract: BFT66
Contextual Info: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

TC51V16325B

Abstract: MJ-13
Contextual Info: TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to pro­

TC5118325B

Abstract: mx c511 tc5118325
Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

Contextual Info: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536

Contextual Info: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro­

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both

Contextual Info: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to

Contextual Info: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

Contextual Info: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to

TC51V18325BJ

Contextual Info: TOSHIBA TC51V18325BJ/BFIW70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V18325BJ/BFT' is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to

2f5 transistor

Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Contextual Info: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC5332410 BF / BFT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by

Contextual Info: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.

Contextual Info: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.

mst 702 lf

Abstract: P63A
Contextual Info: MITSUBISHI MICROCOMPUTERS M37267M4-XXXSP, M37267M6-XXXSP, M37267M8-XXXSP M37267EE-XXXSP, M37267EESP SINGLE-CHIP 8-BfT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION The M37267M4-XXXSP, M37267M6-XXXSP and M37267M8-XXXSP

Contextual Info: SN54LS671, SN54LS672, SN74LS671, SN74LS672 4-BIT UNIVERSAL SHIFT REGISTERSILATCHES WITH 3-STATE OUTPUTS D2638, JANUARY 1981 - REVISED MARCH 1988 4-Bft Universal Shift Registers/Latches SN54LS671, 8N64LS672 . . . J PACKAGE SN74LS671, SN74LS672 . . . DW OR N PACKAGE

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

cdi wiring diagram

Abstract: BFT003 ELMOS E100 PHOTODIODE ALARM CIRCUIT ELMOS and logic gate DOTR
Contextual Info: SPF BFT 003 03 Optical Bidirectional Transceiver for byteflight Data Sheet Short description of complete functional unit Features The device consists of a LED mounted on a large area photodiode for bidirectional optical transmission in half duplex mode. LED and photodiode are driven by the multifunction IC E100.34C2 from ELMOS.

Contextual Info: I Preliminary Spec. MITSUBISHI LSIs MH1 M325DXJ/DNXJ-5,-6,-7 HYPER PAGE MODE 33554432-BfT 1048576-WQRD BY 32-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Single side] DESCRIPTION The M H1M 325CXJ/CNXJ is 1048576-word x 32-bits dynam ic RAM. This consists of two industry standard 1M x16 dynamic

Contextual Info: TC59LM814/06/02 BFT-22,-24,-30 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,1 9 4,3 0 4 -W O R D SX 4 BA N K SX 1 6-BITS DOUBLE DATA RATE FAST CYCLE R AM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM