| BF998R |
|
Infineon Technologies
|
Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; |
Original |
PDF
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90.38KB |
9 |
| BF998R |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode |
Original |
PDF
|
252.54KB |
6 |
| BF998R |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode |
Original |
PDF
|
84.95KB |
7 |
| BF998R |
|
NXP Semiconductors
|
BF998R - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS |
Original |
PDF
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121.33KB |
15 |
| BF998R |
|
Philips Semiconductors
|
Silicon N-channel dual-gate MOS-FETs |
Original |
PDF
|
116.68KB |
12 |
| BF998R |
|
Philips Semiconductors
|
Silicon N-Channel Dual Gate MOS-FET |
Original |
PDF
|
224.07KB |
9 |
| BF998R |
|
Siemens
|
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Original |
PDF
|
34.74KB |
2 |
| BF 998R |
|
Siemens
|
MOSFET, Silicon N-Channel MOSFET Tetrode |
Original |
PDF
|
34.74KB |
2 |
| BF998R |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143R |
Original |
PDF
|
223.35KB |
8 |
| BF998R |
|
Vishay Telefunken
|
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Original |
PDF
|
158.64KB |
9 |
| BF998R |
|
Philips Semiconductors
|
Silicon N-Channel Dual Gate MOS-FET |
Scan |
PDF
|
290.75KB |
10 |
| BF998R,215 |
|
NXP Semiconductors
|
BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal |
Original |
PDF
|
121.33KB |
15 |
| BF998R,215 |
|
NXP Semiconductors
|
Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
Original |
PDF
|
77.79KB |
12 |
| BF998R,235 |
|
NXP Semiconductors
|
BF998R - Silicon N-channel dual-gate MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, Large |
Original |
PDF
|
121.33KB |
15 |
|
|
| BF998R,235 |
|
NXP Semiconductors
|
Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
Original |
PDF
|
77.79KB |
12 |
| BF998RA |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143R |
Original |
PDF
|
223.35KB |
8 |
| BF998RA |
|
Vishay Telefunken
|
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Original |
PDF
|
158.64KB |
9 |
| BF998RA-GS08 |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143R |
Original |
PDF
|
223.35KB |
8 |
| BF998RAW |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-343R |
Original |
PDF
|
223.35KB |
8 |
| BF998RAW |
|
Vishay Telefunken
|
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Original |
PDF
|
158.64KB |
9 |
