BF970 TRANSISTOR Search Results

Contextual Info: _ BF970 VIS HAY Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50

BF970

Abstract: BF970 transistor
Contextual Info: BF970 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

BF970

Abstract: 85005 500WF
Contextual Info: BF970 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

Contextual Info: BF970 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

BF970

Abstract: 13623
Contextual Info: BF970 Silicon PNP RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter

bf970

Abstract: telefunken transistor marking zg
Contextual Info: BF970 Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 1 BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage

BF970

Contextual Info: Temic BF970 S e m i c o n d u c t o r s Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters

BF970

Contextual Info: TEMIC BF970 S e m i c o n d u c t o r s Silicon PNP RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50

BF970

Contextual Info: V iS H A Y _ BF970 _ ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications UHF oscillator and m ixer stages. Features • High gain •

t3hs

Abstract: BF970 sot 37
Contextual Info: T-3HS BF970 PHILIPS INTERNATIONAL SbE D 711005b 0042100 731 IPHIN SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic T-package intended fo r application as self-oscillating mixer stage in u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage open emitter

BF970/A

Contextual Info: BF970 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features 3 • High gain • Low noise 2 Applications UHF oscillator and mixer stages. 1 Mechanical Data Electrostatic sensitive device. Observe precautions for handling. Case: TO-50 Plastic case

transistor bf 970

Abstract: BF970
Contextual Info: BF 970 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features DHigh gain DLow noise 3 2 1 BF970 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage

BFQ58

Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S

t3hs

Abstract: BF970 MARKING FY SOT-37
Contextual Info: BF970 _ PHILIPS INTERNATIONAL SbE D • 711Dfl2b 0042106 731 HiPHIN “ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic T-package intended fo r application as self-oscillating m ixer stage In u.h.f. tuners. Q UICK REFERENCE D A T A

BF970

Abstract: BF-970
Contextual Info: BF970 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • 3 High gain Low noise e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 Applications Electrostatic sensitive device. Observe precautions for handling.

BFT98

Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Contextual Info: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'iai 00E7711 MOM BF970 b^E J> SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic T-package intended for application as self-oscillating mixer stage in u.h.f. tuners. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

sot 37

Abstract: BF970 SOT-37 DDB7712 GDE7711 Self-Oscillating mixer BF-970
Contextual Info: N AUER PHILIPS/DISCRETE b'îE 1> bbSa'lBl GDE7711 404 BF970 SILICON PLANAR EPITAXIAL T RANSISTO R P-N-P transistor in a plastic T-package intended for application as self-oscillating mixer stage in u.h.f. tuners. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

BF777W

Abstract: BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606
Contextual Info: RF Bipolar Transistors For com plete package outlines, refer to pages PO-1 through PO-6 T yp e M a x im u m Ratings VCEO 'c N=NPN /t V mA mW GHz dB 'c mA VCE / V MHz 15 40 20 35 35 20 25 30 30 12 12 12 12 20 20 20 20 40 40 12 12 12 12 15 15 12 15 12 15 16

Contextual Info: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: SIEMENS AKTIENGESELLSCHAF bOE D • ÖE3Sb05 O O S m V b 3G7 HISIE6 SIEMENS ^ 3 / - 0/ Transistoren Transistors HF-Transistoren Maximum Ratings ^CEO h Plot V mA mW Chariicteristics rA =25°C F Gp h le ^CE f GHz dB mA V MHz dB Package h mA LU Type N=NPN P=PNP

BF970

Abstract: BF979 vishay transistor
Contextual Info: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.

TO50 transistor

Contextual Info: Not for new design, this product will be obsoleted soon BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component