| BF908R |
|
NXP Semiconductors
|
Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS |
Original |
PDF
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259.53KB |
9 |
| BF908-R |
|
NXP Semiconductors
|
Dual-gate MOS-FETs |
Original |
PDF
|
259.47KB |
9 |
| BF908R |
|
Philips Semiconductors
|
Dual-Gate MOS-FET |
Original |
PDF
|
58.92KB |
8 |
| BF908R |
|
Philips Semiconductors
|
Dual-Gate MOS-FET |
Original |
PDF
|
162.75KB |
6 |
| BF908R |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
101.25KB |
1 |
| BF908R |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
105.31KB |
1 |
| BF908R |
|
Unknown
|
Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
|
42.73KB |
1 |
| BF908R,215 |
|
NXP Semiconductors
|
Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
Original |
PDF
|
259.53KB |
9 |
| BF908R,235 |
|
NXP Semiconductors
|
Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
Original |
PDF
|
259.53KB |
9 |
