BF556B: Search Results
BF556B: Datasheets (9)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BF556B |
|
BF556B - N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms | Original | 122.87KB | 14 | ||
| BF556B |
|
N-Channel Silicon Junction Field-Effect Transistor | Original | 66.58KB | 11 | ||
| BF556B |
|
N-Channel Field Effect Transistor | Original | 238.22KB | 8 | ||
| BF556B |
|
N-Channel Silicon Junction Field Effect Transistor | Scan | 268.01KB | 9 | ||
| BF556B,215 |
|
BF556 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal | Original | 122.87KB | 14 | ||
| BF556B,215 |
|
N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 63.3KB | 13 | ||
| BF556BT/R |
|
N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms | Original | 63.3KB | 13 | ||
| BF556B T/R |
|
FET Transistor, N Channel, ID 0.013A, Tape and Reel | Original | 66.55KB | 11 | ||
| BF556BTR |
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N-channel silicon junction field-effect transistor | Original | 66.58KB | 11 |
BF556B: Price and Stock
NXP Semiconductors
NXP Semiconductors BF556B,215RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
BF556B,215 | 8,195 |
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Get Quote | |||||||