| BF1100R |
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NXP Semiconductors
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BF1100R - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS |
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PDF
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314.2KB |
15 |
| BF1100R |
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Philips Semiconductors
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Dual-Gate MOS-FET |
Original |
PDF
|
108.1KB |
14 |
| BF1100R |
|
Philips Semiconductors
|
Dual-gate MOS-FETs |
Scan |
PDF
|
382.69KB |
12 |
| BF1100R,215 |
|
NXP Semiconductors
|
Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
Original |
PDF
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314.22KB |
15 |
| BF1100R,235 |
|
NXP Semiconductors
|
Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
Original |
PDF
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314.22KB |
15 |
| BF1100RT/R |
|
NXP Semiconductors
|
Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS |
Original |
PDF
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314.22KB |
15 |
| BF1100RTR |
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Philips Semiconductors
|
Dual-gate MOS-FET |
Original |
PDF
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108.11KB |
14 |
