BF1009SR Search Results
BF1009SR Datasheets (6)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BF1009SR |
|
Dual-MOS FET Monolithic Integrated Circuit | Original | 103.57KB | 5 | ||
| BF1009SR |
|
Silicon N-Channel MOSFET Tetrode | Original | 254.84KB | 5 | ||
| BF1009SR |
|
Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 22.0 dB; F (typ): 1.4 dB; | Original | 81.55KB | 8 | ||
| BF1009SRE6327 |
|
TRANS MOSFET N-CH 12V 0.025A 4SOT-143R | Original | 254.84KB | 5 | ||
| BF1009SRE6327 |
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH 12V 25MA SOT-143R | Original | 8 | |||
| BF1009SRE6327HTSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 12V 25MA SOT-143R | Original | 84.23KB |
BF1009SR Price and Stock
Infineon Technologies AG
Infineon Technologies AG BF1009SRE6327HTSA1RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
BF1009SRE6327HTSA1 | 11,332 |
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