BF DIODE Search Results

transistor BF 509

Abstract: 479S bf diode transistor bf 271 transistors for uhf oscillators bf 107 a transistors bf UHF "AGC Amplifier" BF479 UHF pnp transistor
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ > o LU U o m and @ ÍD < < O E ai > < I- C3 Q_ @ CL □ a. BF 158 BF 160 BF 167 BF BF BF BF 173 251 271 274 BF 288 BF 454 BF 455 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN »TO-18 epoxy IF amplifier for T V IF amplifier for A M -F M radio

Transistors BF 324

Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage

Contextual Info: SIEMENS KOM 2033 B DAYLIGHT FILTER KOM 2033 BF KOM 2100 B DAYLIGHT FILTER KOM 2100 BF 6-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm KOM 2033 B/BF Frame PC board \ A z£ Chip Coating 1.3 ± .5 5 • p.8 * .2 Schematic A1 o — ° K1 A 2o — |> ^ -o K 2

bf259

Abstract: bf258 BF258-BF259 BF257-BF258-BF259 Bf257
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | b3b?E54 GOÖbM? 4 | f-si-aai-BF257&#39; thru BF259 M A X IM U M R A T IN G S R a tin g Sym bol BF BF BF 257 258 259 U nit CASE 79-04, STYLE 1 TO-39 TO-2Q5AD VCEO 160 250 3 0 0 Vdc Collector-Emitter Voltage VCER

Contextual Info: SEMICONDUCTOR KIA431/F/A/AF/B/BF TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT PROGRAMMABLE PRECISION REFERENCES B C A The KIA431/F/A/AF/B/BF integrated circuits are three-terminal programmable shunt regulator diodes. These monolithic IC voltage reference operate as a low temperature coefficient zener which is

Contextual Info: HL1541A/AC/BF/DL/DM InGaAsP LD Description The HL1541 A/AC/BF/DL/DM are 1.55 |im band laser diodes. Features • The HL1541A/AC are packaged in chip carrier type miniature packages, and are appropriate for incorporating in modules. • The HL1541BF is packaged in a butterfly-type

transistor array

Abstract: DARLINGTON TRANSISTOR ARRAY "Darlington Transistor" npn darlington array transistor ta8435 Darlington transistor DIP-16 CPP-25 DIP16
Contextual Info: A4 Application Unipolar Stepping motor driver Bipolar Hawftch Bipolar 1 chip for micfocaeeen» 71 Type No. TD62064AP/AF TD62064BP-1/BF TD62164AP/AF TD62164BP/BF TD62083AP TD62084AP TD62107P TD62107BP TD62707AP TD62308AP/AF TD62308BP-1 TD62308BF TD62318AP/AF

FPT-48P-M19

Contextual Info: MBM29DL32TF/BF-70 Data Sheet Retired Product MBM29DL32TF/BF -70 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

SSOP16-P-225-0

Abstract: td62m8600 TB62725BP capacitors BF SSOP16
Contextual Info: TB62725BP/BF/BFN TOSHIBA Bi­CMOS Integrated Circuit Silicon Monolithic TB62725BP, TB62725BF, TB62725BFN 8­bit Constant­Current LED Driver of the 3.3­V and 5­V Power Supply Voltage Operation The TB62725BP/BF/BFN are comprised of constant­current

bf 239

Contextual Info: HL1341 A/AC/M F/BF/DL InGaAsP LD Description The HL1341A/AC/MF/BF/DL are 1.3 nm InGaAsP distributed feedback DFB laser diodes with a double heterostructure. They are suitable as light sources for high-bit-rate long distance optical fiber communica­ tion systems and various other types o f optical equipment.

BF 195 pin configuration

Abstract: Bf 353 BF998 BF998R f 4556 BF 998 526 8694 010
Contextual Info: BF 998 / BF 998 R TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range

Contextual Info: Ul 1341 A/AC/FG/M F/BF/DL HITACHI/COPTOELECTRONICS Description she j> InGaAsP LP , MM'JbSOS 0 0 1 5 1 2 4 453 IHIT4 The HL1341A/AC/FG/MF/BF/DL are 1.3 im InGaAsP distributed feedback (DFB) laser diodes with buried hetero structure. They are suitable as light sources in high-bit-rate long distance fiber optic com­

SA611

Abstract: 29DL320
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

Transistor BF 479

Abstract: BF479 G1033 Transistor BF 479 t transistor BF 502 498MHz g103 G-1033 BF 479
Contextual Info: BF 479 SILICON P LA N A R PNP PRELIMINARY DATA LOW-NOISE ULTRA LINEAR UHF-VHF AMPLIFIER The BF 479 is a PNP silico n planar epitaxial tra n s isto r in a T -p la s tic package m ainly intended fo r high curre nt UHF-VHF stages of TV tuners. In this application, com bined w ith a PIN diode attenuator circu it, it presents very low

Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM Description bTh M H IT H InGaAsP LD The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x i m u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu r e s • The HL1541A/AC are packaged in chip carrier

BF845

Abstract: BF844 MPSA44
Contextual Info: MOTORCLA SC ISE D I b3b?2SM 0QñST33 T | XSTRS/R F r-3i-ii BF844 BF845 M A X IM U M RATINGS S ym b ol R atin g BF 844 BF 845 U n it CASE 29-04, STYLE 1 TO-92 TO-226AA C ollector-E m itter Voltage VCEO 400 350 Vdc C ollector-Base Voltage VcBO 450 400 Vdc

2f5 transistor

Contextual Info: 1 29E D aa3st»as oogmstô 3 SIEG ^ j t - r r BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF fo r in p u t stag e s up to 9 0 0 M H z BF 967 is a PNP silicon UHF planar transistor with passivateci surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable

29DL32BF

Abstract: MBM29DL32
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

BF543

Abstract: MARKING G2 Telefunken diode marking BF
Contextual Info: BF 543 TELEFUNKEN Semiconductors N-Channel MOS-Fieldeffect Triode. Depletion Mode. Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features DIntegrated gate protection diode DLow noise figure

BF966

Abstract: BF961
Contextual Info: BF 966 S TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes

PA marking code

Abstract: FPT-48P-M19 SA47 SA70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20908-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL34TF/BF 70 • DESCRIPTION The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

BF964

Abstract: BF961 bf-961 964s
Contextual Info: BF 964 S TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for VHF TV-tuners. Features D Integrated gate protection diodes

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V