BEAM-X SWITCH Search Results

diode RL 207

Abstract: gold metal detectors gold detector circuit free x band diode detector waveguide CDB7620-207 ka-band mixer DDB2503-250 DDB2504-000 DDB2504-230 DDB2265-000
Contextual Info: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications x Detectors Features x Available in both P-type and N-type low barrier silicon x Low 1/f noise x Bonded junctions for reliability x Planar passivated beam-lead and chip construction

IR3C09

Abstract: Sharp Laser Diode driver constant current 2 terminal source IR3C11 n type laser diode driver Bipolar Silicon monolithic IC sharp laser
Contextual Info: [ x x x x x -x x x x x x x x x x x x x x x J IR3C09 Description The IR3C09 is a laser diode driver IC for laser beam printers LBP . The laser photo output, set to a constant value, can be turned ON and OFF at high speeds by this IC. The circuit that sets the beam output to a constant value

201203

Abstract: finisar
Contextual Info: Finisar Prisms Features: ƒ ƒ High Pricision Small size Applications: ƒ ƒ ƒ Switch Beam Alignment Polarization Beam Splitter Specifications: Parameter Unit Material X, Y Dimension Tolerance Flatness Surface Quality scratch/dig Specification According to request

Contextual Info: 300-0613-00 635nm 32mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 32.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

CLASS II LASER

Contextual Info: 300-0607-00 635nm 12mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 12.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

830nm

Contextual Info: 300-0691-00 830nm 24mW TE Cooled Module Specification Wavelength 830nm ±10nm Output Power 24.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

Contextual Info: 300-0609-00 635nm 16mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 16.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

7ba Diode

Contextual Info: 300-0603-00 635nm 4mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 4.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

red violet diode

Abstract: Laser diode temperature
Contextual Info: 300-0601-00 635nm 0.9mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 0.9mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

830nm

Abstract: red violet diode 7ba Diode
Contextual Info: 300-0693-00 830nm 120mW TE Cooled Module Specification Wavelength 830nm ±10nm Output Power 120.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

Contextual Info: 300-0605-00 635nm 8mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 8.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

CLASS II LASER

Abstract: DSASW00326104.txt
Contextual Info: 300-0671-00 785nm 55mW TE Cooled Module Specification Wavelength 785nm ±10nm Output Power 55.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

Contextual Info: 300-0611-00 635nm 24mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 24.0mW adjustable Power Stability <1% Beam Size 2.5 x 2.5 mm Beam Divergence 0.6 mrad Beam Quality m2 <1.3, strehl ratio >0.86 RMS Noise <1% Operating Voltage +5V ±0.1V DC

ts50

Abstract: ultrasonic movement sensor E4B-LS20E4-2M E4BRS70E4 10 LED SOUND LEVEL INDICATOR E4BT E4B-TS50E4
Contextual Info: R Ultrasonic Sensor With Zone Sensing E4B Through-beam, Reflective and Zone Models H 1 m through-beam for long range applications H Narrow beam angle of 8° detects objects as small as 2 x 2 cm H Zone models detect objects smoothly while suppressing interference from

Contextual Info: 300-0621-00 690nm 25mW TE Cooled Module Specification Wavelength 690nm ±10nm Output Power 25.0mW adjustable Power Stability <1% Beam Size 6 x 2.2 mm Beam Divergence 0.2 x 0.4 mrad RMS Noise <1% Operating Voltage +5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

Contextual Info: 300-0610-00 635nm 20mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 20.0mW adjustable Power Stability <1% Beam Size 6 x 2.2 mm Beam Divergence 0.2 x 0.4 mrad RMS Noise <1% Operating Voltage +5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

LED drive and keyboard control chip

Abstract: 300C hyperterminal* rs232
Contextual Info: 300-0640-00 375nm 1.5mW TE Cooled Module Specification Wavelength 375nm ±5nm Output Power 1.5mW adjustable Power Stability <1% Beam Size 4.4 x 1.4 mm Beam Divergence 0.4 x 0.6 mrad RMS Noise <1% Operating Voltage +6.5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

Contextual Info: 300-0608-00 635nm 12mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 12.0mW adjustable Power Stability <1% Beam Size 6 x 2.2 mm Beam Divergence 0.2 x 0.4 mrad RMS Noise <1% Operating Voltage +5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

830nm

Contextual Info: 300-0690-00 830nm 20mW TE Cooled Module Specification Wavelength 830nm ±10nm Output Power 20.0mW adjustable Power Stability <1% Beam Size 6 x 2.2 mm Beam Divergence 0.2 x 0.4 mrad RMS Noise <1% Operating Voltage +5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

SK131

Abstract: BX535B pin diagram of Sk100 1000B BURROUGHS "beam-x switch" SK100 rs tube ScansUX851
Contextual Info: BULLETIN NO. 1000B August 1,1962 BEAM-X S u p e rse d e s B u lle tin No. lOOOA W IT GENERAL PURPOSE Type 6710 (BX-IOOO) The BEAM-X Switch, type 6710, is a 10 position, high vacuum electronic switching device. It is intended for use wherever multiposition electronic counting, distributing or switching

300C

Abstract: 473nm
Contextual Info: 300-0620-00 473nm 4mW TE Cooled Module Specification Wavelength 473nm ±5nm Output Power 4.0mW adjustable Power Stability <1% Beam Size 4.4 x 1.4 mm Beam Divergence 0.4 x 0.6 mrad RMS Noise <1% Operating Voltage +6.5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

100C

Abstract: 180C 300C 405nm LED
Contextual Info: 300-0652-00 405nm 50mW TE Cooled Module Specification Wavelength 405nm ±10nm Output Power 50.0mW adjustable Power Stability <1% Beam Size 4.4 x 1.4 mm Beam Divergence 0.4 x 0.6 mrad RMS Noise <1% Operating Voltage +6.5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

Contextual Info: 300-0604-00 635nm 6mW TE Cooled Module Specification Wavelength 635nm ±10nm Output Power 6.0mW adjustable Power Stability <1% Beam Size 6 x 2.2 mm Beam Divergence 0.2 x 0.4 mrad RMS Noise <1% Operating Voltage +5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)

300C

Contextual Info: 300-0660-00 440nm 4mW TE Cooled Module Specification Wavelength 440nm ±5nm Output Power 4.0mW adjustable Power Stability <1% Beam Size 4.4 x 1.4 mm Beam Divergence 0.4 x 0.6 mrad RMS Noise <1% Operating Voltage +6.5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)