Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BDW84A Search Results

    BDW84A Datasheets (15)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDW84A
    		Bourns PNP SILICON POWER DARLINGTONS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF 98.58KB 5
    BDW84A
    		Central Semiconductor Leaded Power Transistor Darlington Original PDF 65.99KB 1
    BDW84A
    		Power Innovations PNP SILICON POWER DARLINGTON Original PDF 158.23KB 6
    BDW84A
    		Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF 10.97KB 1
    BDW84A
    		Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 42.73KB 1
    BDW84A
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.19KB 1
    BDW84A
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 99.23KB 1
    BDW84A
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 38.42KB 1
    BDW84A
    		Unknown Transistor Replacements Scan PDF 65.58KB 1
    BDW84A
    		Unknown Shortform Transistor PDF Datasheet Short Form PDF 154.24KB 1
    BDW84A
    		Unknown Cross Reference Datasheet Scan PDF 39.51KB 1
    BDW84A
    		Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF 43.56KB 1
    BDW84A
    		Transys Electronics BJT, PNP, Darlington Power Transistor, IC 15A - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Scan PDF 755.53KB 5
    BDW84A-S
    		Bourns PNP DARLINGTON 60V 15A Original PDF 76.13KB 4
    BDW84A-S
    		Bourns Transistors (BJT) - Single, Discrete Semiconductor Products, PNP DARLINGTON 60V 15A Original PDF 5

    BDW84A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDW84

    Abstract: BDW83 BDW84A BDW83A BDW83B BDW83C BDW83D BDW84B BDW84C BDW84D
    Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A


    Original     		BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84 BDW83 BDW84A BDW83A BDW83B BDW83D BDW84B BDW84C BDW84D PDF

    TRANSISTOR Bdw84d

    Abstract: bdw84 BDW84C BDW83d
    Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D ● 125 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A


    Original     		BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D TRANSISTOR Bdw84d bdw84 BDW84C PDF

    bdw83

    Abstract: TRANSISTOR Bdw83d BDW83B BDW83C
    Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 125 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A


    Original     		BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D bdw83 TRANSISTOR Bdw83d BDW83B BDW83C PDF

    ED 83A

    Abstract: BDW83B BDW83d
    Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D • 150 W at 25°C Case Temperature


    OCR Scan     		BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D ED 83A BDW83B PDF

    BDW84

    Abstract: BDW83 BDW83A BDW83B BDW83C BDW83D BDW84A BDW84B BDW84C BDW84D
    Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A


    Original     		BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84 BDW83 BDW83A BDW83B BDW83D BDW84A BDW84B BDW84C BDW84D PDF

    BDW83

    Abstract: BDW83C BDW83D BDW83A BDW83B BDW84 BDW84A BDW84B BDW84C BDW84D
    Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A


    Original     		BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BDW83 BDW83C BDW83D BDW83A BDW83B BDW84 BDW84A BDW84B BDW84D PDF

    TRANSISTOR Bdw83d

    Abstract: BDW83B BDW83 BDW83A BDW83C BDW83D BDW84 BDW84A BDW84B BDW84C
    Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 125 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A


    Original     		BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D TRANSISTOR Bdw83d BDW83B BDW83 BDW83A BDW83C BDW83D BDW84 BDW84A BDW84B PDF

    TRANSISTOR Bdw84d

    Abstract: BDW84C bdw84
    Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D ● 125 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A


    Original     		BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D TRANSISTOR Bdw84d BDW84C bdw84 PDF

    tip142/TIP3055

    Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
    Contextual Info: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A


    OCR Scan     		O-218 BDV65 BDV64 BDV65A BDV64A BDV65B BDV64B BDW83A BDW84A BDW83B tip142/TIP3055 BDW83C PDF

    bdw83a

    Contextual Info: 0 0 2 6 4 4 5 1 SCS-THOMSON iHiOTriiMDOi S B DW83 A/B/C BDW84A/B/C G S-TH0M S0N 3GE » HIGH CURRENT POWER DARLINGTON • HIGH CURRENT ■ HIGH GAIN DESC RIPTIO N The BDW83A/B/C are silicon epitaxial base NPN power monolithic Darlington mounted in TO-218 plastic package. They are intended for use in power


    OCR Scan     		BDW84A/B/C BDW83A/B/C O-218 300ns, bdw83a PDF

    BDW84B

    Abstract: BDW84C BDW83 BDW83A BDW83B BDW83C BDW83D BDW84 BDW84A BDW84D
    Contextual Info: Iß AN SYS BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS fUCÏRONICS LIMITED SOT-93 PACKAGE TOP VIEW B C • 150 W at 25°C Case Temperature cc • 15 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 6 A '— '— E C 1


    OCR Scan     		BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84B BDW84C BDW83 BDW83A BDW83B BDW83D BDW84 BDW84A BDW84D PDF

    BDW83

    Abstract: BDW83A BDW83B BDW83C BDW83D BDW84 BDW84A BDW84B BDW84C BDW84D
    Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A


    Original     		BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW84 BDW84A BDW84B BDW84D PDF

    TIC106D equivalent

    Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
    Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


    Original     		O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent PDF

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B
    Contextual Info: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


    Original     		O-218 BDV64B BDW84A BDV65 BDV64 BDV65A BDV64A BDV65B BDW83A BDW83B tip142/TIP147 AMPLIFIER CIRCUIT BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B PDF

    TO276AB

    Abstract: 4MHZ
    Contextual Info: Search Results Part number search for devices beginning "BDS28" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BDS28A PNP TO254 60V 30A 1000 - 5/20 4MHz


    Original     		BDS28" BDS28A BDS28ASMD BDS28ASMD-JQR-B BDS28B BDS28BSMD BDS28BSMD-JQR BDS28CSMD BDS28CSMD-JQR-B O276AB) TO276AB 4MHZ PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent PDF

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 PDF