BDV64B TRANSISTOR Search Results

BDV64B

Abstract: BDV65B bdv64b transistor
Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

BDV64B

Abstract: BDV65B bdv64b transistor
Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

BDV65, BDV64

Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
Contextual Info: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS

BDV64B

Abstract: BDV65B
Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • w DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

4422 datasheet

Abstract: ic 701 BDV64B BDV65B
Contextual Info: NPN Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60–80–100–120 VOLTS

Contextual Info: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. N-P-N complements are BDV65,65A, 65B and 65C. QUICK REFERENCE DATA

Motorola Power Transistor Data Book

Abstract: Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA
Contextual Info: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc

transistors BDV64B

Abstract: bdv64b transistor
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M DM BDV65B Com plem entary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applica­ tions. • • High DC Current Gain HFE = 1000 min. @ 5 Adc

Y182

Abstract: transistor K 1413 bdv64 transistors BDV64B BDV64B
Contextual Info: i BDV64; 64A _ I l BDV64B; 64C PHILIPS INTERNATIONAL SbE D • 711DÖ2b 0D43342 3Tb ■ PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

Contextual Info: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B Com plem entary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applica­ tions. • • DARLINGTONS 10 AMPERES

BDV65B equivalent

Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors

BDV64B

Abstract: MOTOROLA TRANSISTOR BDV65B bdv64b transistor
Contextual Info: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc

bdv64b

Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
Contextual Info: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors

tip142/TIP3055

Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
Contextual Info: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B
Contextual Info: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100

transistors BDV64B

Abstract: BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
Contextual Info: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors

Contextual Info: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors

bdv64b transistor

Abstract: ic 7493 BDV64 BDV64B transistors BDV64B BDV65 7Z77491
Contextual Info: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n olithic D arlington circu it fo r audio o u tp u t stages and general a m p lifie r and switching applications. N-P-N complements are B D V 65, 65A, 65B and 65C.

motorola 572 transistor

Abstract: MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B
Contextual Info: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

BDV64

Abstract: transistors BDV64B BDV64A BDV64C BDV64B BDV65, BDV64
Contextual Info: Inchange Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.

transistors BDV64B

Abstract: BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
Contextual Info: SavantIC Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.

BDV64

Abstract: transistors BDV64B BDV64B BDV64A BDV64C
Contextual Info: Inchange Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV65/65A/65B/65C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier

BDV64

Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
Contextual Info: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general