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BDP950
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Infineon Technologies
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PNP Silicon AF Power Transistor |
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44.27KB |
4 |
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BDP950
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Infineon Technologies
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Ic = 500 mA; Package: PG-SOT223-4; Polarity: PNP; VCEO (max): 60.0 V; Ptot (max): 5,000.0 mW; hFE (min): 85.0 - 475.0; IC: 3,000.0 mA; |
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536.4KB |
8 |
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BDP950
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Siemens
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PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
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41.39KB |
4 |
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BDP950
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
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465.63KB |
37 |
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BDP950E6327
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Infineon Technologies
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TRANS GP BJT PNP 60V 3A 4SOT-223 T/R |
Original |
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69.74KB |
7 |
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BDP950E6327
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Infineon Technologies
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP AF 60V SOT-223 |
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8 |
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BDP950E6327HTSA1
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 60V 3A SOT-223 |
Original |
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527.89KB |
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BDP950E6778
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Infineon Technologies
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TRANS GP BJT PNP 60V 3A 4SOT-223 T/R |
Original |
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69.74KB |
7 |
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BDP950GEG
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Infineon Technologies
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TRANS GP BJT PNP 60V 3A 4SOT-223 |
Original |
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69.74KB |
7 |
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BDP950H6327
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Infineon Technologies
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP AF PWR 60V 3A SOT223 |
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8 |
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BDP950H6327XTSA1
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 60V 3A SOT223 |
Original |
PDF
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533.24KB |
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BDP950-T&R
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Infineon Technologies
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TRANS GP BJT PNP 60V 3A 4SOT-223 T/R |
Original |
PDF
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69.74KB |
7 |
