BD809G Search Results
BD809G Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BD809G | On Semiconductor | BD809 - TRANSISTOR 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB, LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN, BIP General Purpose Power | Original | 81.7KB | 4 | ||
| BD809G | On Semiconductor | TRANS GP BJT NPN 80V 10A 3TO-220AB RAIL | Original | 62.3KB | 5 |
BD809G Price and Stock
onsemi BD809GTrans GP BJT NPN 80V 10A 90000mW 3-Pin(3+Tab) TO-220AB Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BD809G | 1,150 | 680 |
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BD809G | 1,193 | 1 |
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BD809G | 900 |
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BD809G | 1,650 |
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Get Quote | |||||||
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BD809G | 9,536 |
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Others BD809GINSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BD809G | 1,650 |
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Get Quote | |||||||
BD809G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BD281
Abstract: BD2810G BD809 BD809G BD810 200 watts audio amp power transistors circuit diagram
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bd809bd810bd809/dbd281+3 | |
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Contextual Info: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc |
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bd809bd810bd809/d | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
1000 watts power amp circuit diagram
Abstract: 200 watt audio amplifier 500 watts audio amplifier diagram NPN 200 VOLTS POWER TRANSISTOR power transistor audio amplifier 500 watts AMP contact assembly bd809 BD809G BD810 BD810G
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bd809bd810bd809/d1000 watts power amp circuit diagram+7 | |
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Contextual Info: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS |
Original |
bd809bd810bd809/d | |
BD809Contextual Info: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc |
Original |
bd809bd810bd809/d | |
BD809G
Abstract: BD810G BD809 BD810
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Original |
bd809bd810bd809/dbd809g+1 | |
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Contextual Info: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc |
Original |
bd809bd81090salebd809/d |