BD242C ST Search Results

BD241C-D

Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG BD242B equivalent
Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON

BD24x

Abstract: BD241CG BD242CG
Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

BD241C-D

Abstract: BD241C BD242C
Contextual Info: ON Semiconductort Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device

BD241C

Abstract: MARKING 242B 241c npn transistor 400 volts.10 amperes
Contextual Info: BD241C* NPN , BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMPERES 80, 100 VOLTS

NT 407 F power transistor

Abstract: NT 407 F transistor BD241C-D b0242b
Contextual Info: MOTOROLA Order this document by BD241C/D SEMICONDUCTOR TECHNICAL DATA BD241C* PNP Com plem entary Silicon Plastic Power Transistors BD242B BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector-Emitter Saturation Voltage —

bipolar transistor td tr ts tf

Abstract: BD241C-D BD241C BD242B BD242C BD242B equivalent
Contextual Info: MOTOROLA Order this document by BD241C/D SEMICONDUCTOR TECHNICAL DATA NPN BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage —

BD241C-D

Abstract: BD241C BD242C
Contextual Info: ON Semiconductor Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device

bd242 TRANSISTOR equivalent

Abstract: BD242B BD241 BD242 BD242A BD242C
Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current B 1 ● 5 A Peak Collector Current C 2 ● Customer-Specified Selections Available

BD242C

Abstract: 241C 24-2C 241B BD241 BD241A BD241B BD241C BD242 BD242A
Contextual Info: BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD241,241A, 241B, 241C BD242,242A, 242B, 242C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E

Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current B 1 5 A Peak Collector Current C 2 Customer-Specified Selections Available

Contextual Info: N AMER PHILIPS/D IS CRETE - E5E D • 1^53=131 D D i m O S Q ■ I BD242; BD242A BD242B; BD242C J T -3 3 -1 ? SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier

Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series T 0 -2 2 0 PACKAGE TOP VIEW • 40 W at 25°C Case Temperature

Contextual Info: BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD241,241A, 241B, 241C BD242,242A, 242B, 242C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN 14.42

Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

BD241

Abstract: BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
Contextual Info: NPN BD241, A, B, C, PNP BD242, A, B, C, MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors, the complementary PNP are BD242, A, B, C. They are the silicon epitaxial-base Power Transistors for use in medium power linear and

TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

BD242

Abstract: BD242C BD242B BD242A vbe0 30v
Contextual Info: SavantIC Semiconductor Product Specification BD242/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2

BD242

Abstract: BD242B BD242C BD241 BD242/A/B/C BD242A
Contextual Info: Inchange Semiconductor Product Specification BD242/A/B/C Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD241/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD242A

Contextual Info: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Em itter V oltage : BD242 Rating Unit - 45 V : BD242A - 60

fast switching pnp transistor 3A 60V

Abstract: bd241 BD242
Contextual Info: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

BD242

Contextual Info: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

b0239c

Abstract: 7 amps pnp transistor TRANSISTOR T0220 PNP POWER TRANSISTOR TO220 B0243C BD243 B0243 b0244c npn transistor bd243c Transistor 2n6099
Contextual Info: PLASTIC POWER P L A S T IC P O W E R T R A N S IS T O R S E L E C T O R C H A R T lc 4 Am ps VCE° V o lts NPN PNP 5 Am ps NPN 7 Am ps PNP NPN PNP 7 Am ps NPN PNP > 10 A m ps NPN 2 N 6 2 8 8 2N 6 1 1 1 30 2N6103 40 BD239 BD240 B D 2 41 BD242 BD243 BD244 BD243A

BD241B

Abstract: b0241b BD241 VCS-60V 80241 80241A B0241C BD241A BD241C BD242
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN BD241 BD241A BD241B BD241C . designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage V ceo «.»= 45V(Min - BD241.BD242