BD242C Search Results

Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

BD241C-D

Abstract: BD241C BD242C
Contextual Info: ON Semiconductor Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device

Contextual Info: BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD241,241A, 241B, 241C BD242,242A, 242B, 242C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN 14.42

bd639

Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul

BD242B

Abstract: BD242C BD241 BD242 BD242A
Contextual Info: /fiANSYS ELECTRONICS BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS LIMITED Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current B C 5 A Peak Collector Current

Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

bd242 TRANSISTOR equivalent

Abstract: BD242B BD242A BD242C BD241 BD242
Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current B 1 ● 5 A Peak Collector Current C 2 ● Customer-Specified Selections Available

mje15033 replacement

Abstract: 2SD694 2SC1832 MJE340 D40K MJ12002 BDW59 2SC187 MJ3237 BD3851
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc Max @ IC = 3.0 Adc

400 watts amplifier circuit diagram

Abstract: BD241C-D BDXXX BD241C BD242B BD242C
Contextual Info: BD241C* NPN , BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMPERES 80, 100 VOLTS

D242

Abstract: d242b
Contextual Info: BD242, BD242A, BD242B, BD242C File Number 672 Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For P o w er-A m p lifier and H igh-Speed-Switching A pplications Features: • 40 W at 25°C case temperature ■ 5-A rated collector current ■ Min. f T of 3 MHz at 10 V. 500 mA

BA241

Abstract: ba241c 30Vc
Contextual Info: NPN BD241C * Complementary Silicon Plastic Power Transistors PNP BD242B BD242C * . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — *ON Semiconductor Preferred Device VCE = 1.2 Vdc Max @ IC = 3.0 Adc

BD2428

Abstract: HEP transistors
Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations Limited, UK JU N E 1973 - REVISED M ARCH 1997 D esigned for Complementary U m with the BD241 Series T 0-220 PA C KA G E TOP VIEW 40 W at 25°C C ase Temperature

Contextual Info: BD242C Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BD24x

Abstract: BD241CG BD242CG
Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

BD241B

Abstract: NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor
Contextual Info: MOTOROLA Order this document by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage —

bd242 TRANSISTOR equivalent

Abstract: BD242 BD242A BD241 BD242B BD242C
Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW ● 40 W at 25°C Case Temperature

tj241

Abstract: 241B BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD241, 241A, 241B, 241C NPN PLASTIC POWER TRANSISTORS

Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

BD241C-D

Abstract: BD241C BD242C
Contextual Info: ON Semiconductort Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device

Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series T 0 -2 2 0 PACKAGE TOP VIEW • 40 W at 25°C Case Temperature

Contextual Info: N AMER PHILIPS/D IS CRETE - E5E D • 1^53=131 D D i m O S Q ■ I BD242; BD242A BD242B; BD242C J T -3 3 -1 ? SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier

NT 407 F power transistor

Abstract: NT 407 F transistor BD241C-D b0242b
Contextual Info: MOTOROLA Order this document by BD241C/D SEMICONDUCTOR TECHNICAL DATA BD241C* PNP Com plem entary Silicon Plastic Power Transistors BD242B BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector-Emitter Saturation Voltage —

BD241C

Abstract: MARKING 242B 241c npn transistor 400 volts.10 amperes
Contextual Info: BD241C* NPN , BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMPERES 80, 100 VOLTS

BD241C

Contextual Info: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors BD241C * PNP BD242B . . . designed for use in general purpose amplifier and switching applications. BD242C * • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device