BD235 TRANSISTOR Search Results

Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V : BD235 60 V : BD237 80

BD238

Abstract: NPN MATCHED PAIRS NPN pnp MATCHED PAIRS BD235-BD236 bd238 equivalent BD235 BD236 bd235 datasheet BD237 BD237-BD238
Contextual Info: BD235 BD236 BD237 BD238 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear

BD238

Abstract: BD236 BD237 BD235
Contextual Info: BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.

D237B

Contextual Info: rz 7 SGS-THOMSON BD235/BD236 BD237/BD238 Ä T # [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear

60V transistor npn 1a

Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V

2N5192 BD441

Abstract: 2N4923 bd435 BD435/BD436 bf469 or equivalent darlington bd139 2N4921 2N4922 2N5190 2N5191
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

BD237

Abstract: BD235 bd237 equivalent BD233 BD234 bd237 datasheet bd235 datasheet SEM 238
Contextual Info: Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION

BD237

Abstract: BD235 BD233 BD234
Contextual Info: SavantIC Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD234 /236 /238 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1

BD233

Abstract: BD234 BD237 BD235 BD236 BD238 CDIL BD238 238r BD233-BD234 CDIL BD233
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

Plastic-Encapsulate Transistors

Abstract: BD233 417 TRANSISTOR BD237-10 BD235 BD237 IC 7400 7400 IC symbol transistor TO-126 Outline Dimensions
Contextual Info: TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range

bd233 rthj-c

Abstract: npn transistors,pnp transistors BD233 BD234 BD235 BD236 BD237 BD238
Contextual Info: IL BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B

to126 case

Abstract: BD139 BD136
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

Contextual Info: _ y \ _ BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs

cb 237

Abstract: BD235 bd233
Contextual Info: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS

BD235 PHILIPS

Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its

BD233

Abstract: FT501
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs

ym 238

Abstract: transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237
Contextual Info: "nOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC Tt 9 6D 8 0 5 7 3 CXSTRS/R F D T-33-09 BD233 BD235 BD237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE POWER TRANSISTOR P LA STIC M E D IU M POW ER S IL IC O N N P N TR A N S IS TO R NPN SILICO N . . . designed for use in 5 to 10 Watt audio amplifiers and drivers

Contextual Info: 7 ^ 2 3 7 Q02Ô3TS ^ mT-3>3>'0°\ S G S -T H O M S O N M Ê B O iU lie ïlM iis S S G S- TH OM SON B D 2 3 3 /5 /7 B D 2 3 4 /6 /8 3GE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃

bd237

Abstract: bd235 datasheet BD234
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃

BD233

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃ Collector Current : IC=2A

Contextual Info: MCC TM Micro Commercial Components BD233 BD235 BD237
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x Power Dissipation: PCM =1.25W, Ta=25ć Collector Current : IC=2A

bd233

Contextual Info: MCC TM Micro Commercial Components BD233 BD235 BD237
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"