BD135 SWITCH Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 SOT-32 Plastic Package BD135, 137, 139 BD135, BD137, BD139 NPN PLASTIC POWER TRANSISTORS Complementary BD136, 138, 140 Medium Power Linear and Switching Applications

BD139

Abstract: BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD136 BD137 BD140 bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

transistor BD139 N

Abstract: power transistor bd139 BD139 amplifier BD139 BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10
Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted

Bd139

Abstract: BD136 bd139 Complement
Contextual Info: BD135/137/139 BD135/137/139 Medium Power Linear and Switching Applications • Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

CDIL BD139

Abstract: CDIL BD137 bd139 140 BD135 CDIL BD137 parameters bd135 BD136 mw 137 BD137 BD139
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-126 SOT-32 Plastic Package BD135, 137, 139 BD135, BD137, BD139 NPN PLASTIC POWER TRANSISTORS Complementary BD136, 138, 140

transistor BD139 N

Abstract: BD135-BD137-BD139
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage S ym bol : BD135 R a tin g U n it

BD135

Contextual Info: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU

BD139 time

Abstract: bd140 Complement BD136
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD135, BD137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Base Voltage : BD136 : BD138 : BD140 Collector Emitter Voltage : BD136

transistor BD139 N

Abstract: bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD135 VcB O Rating Unit 45 V : BD137 60 V

BDI35

Abstract: Transistor 80139 pin configuration transistor BD139 mw 137 BD137 coil power transistor bd139 BD135 BD136 BD137 BD139
Contextual Info: BD135, BD137, BD139 BDI35, 137, 139 NPN PLASTIC POWER TRANSISTORS Complementary B D 136,138, 140 Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3 BASE DIM MIN. MAX. A 7.4 7.8 Q 10.5 10.8 C 2.4 2 .7 D 0.7 0.9 E F 2.25 TYP.

transistor bd139

Abstract: BD136 bd140 Complement
Contextual Info: BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD138 - 60 V : BD140 - 80 V - 45 V C ollector Base Voltage

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

transistor BD 246

Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Contextual Info: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A

Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80

2SC2456

Abstract: 2SD549 bf459 cross reference 2sc496 BD139 2SC495 2SC2824 2sc2270 2sc2376 2SA1120
Contextual Info: —3 00 rc H 4 TO-126 PACKAGE SERIES CD > fci M H rì ✓0 m Application ic PC . . hFE Tc=>2S*C VcE *C (V) (W) (V) (A) f T TYP. >C VCE •c f*»1 MHz V cb CROSS REFERENCE (V) (A) (pF) (V) no. - PNP T V Chroma Out BF469 BF470 250 5 50MIN. 20 T V Chroma Out

Contextual Info: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C This series is currently available, but not recommended for new designs. TO-220 PACKAGE

TRANSISTOR D 1978

Contextual Info: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW

Contextual Info: BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 2 A Continuous Collector Current 3 A Peak Collector Current B 1 Typical tf = 200 ns at 25°C C 2 E 3 This series is currently available, but not recommended for new designs.

BD136

Abstract: BD135 BUX84 TRANSISTOR D 1978
Contextual Info: BUX84 NPN SILICON POWER TRANSISTOR ● ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current B 1 ● Typical tf = 200 ns at 25°C C 2 E 3 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base.

Contextual Info: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

Contextual Info: BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 2 A Continuous Collector Current 3 A Peak Collector Current B 1 Typical tf = 200 ns at 25°C C 2 E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base.

BU426

Abstract: BU426A BD135 BD136
Contextual Info: BU426, BU426A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 900 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted)