BD S48 Search Results

Contextual Info: 7 DRAWI NG THIS MADE IN THI RD DRAWI NG ANGLE 15 U N P U B L I 5 H E D COPYRIGHT 5 6 3 4 2 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI S T LOC 19 REV I 5 I0N5 BD 77 RESERVED. -37.85[1 . 4 9 0 ] LTR ZONE -A- - 2.54+0.08

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

74ALVCH244

Abstract: D2396 BOOT13
Contextual Info:
          March 2001 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 2001 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

74ALVCH244

Abstract: DB16 connector
Contextual Info: IDT79EB351 Evaluation Board Manual January 2002 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 330-1748 Printed in U.S.A. 2001 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

74ALVCH244

Abstract: j2233 RC3235 MSC501 71V416S15
Contextual Info: 79EB351 Evaluation Board Manual June 2003 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

DB29 connector male

Abstract: 74ALVCH244 conn 2X5 BD S34 crt monitor DB9 male connector to DB15 male CONNECTOR DB26 77V105 D2396 8MBX32
Contextual Info: 79EB355 Evaluation Board Manual June 2003 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

lcd n 20201

Abstract: CLW10 38495 S337 89v51 s179 bd 5445 code s244
Contextual Info: HD66779 366-channel Source Driver for 262,144-color Displays 64 grayscale for Amorphous Silicon, Low-temperature Poly-silicon TFT Panels REJxxxxxxx-xxxxZ Rev.1.00 June.13.2003 Description . 4

2332 rom

Abstract: MIC11
Contextual Info: O K I Semiconductor M SM 6665C-XX DOT MATRIX LCD CONTROLLER WITH 17-DOT COMMON DRIVER AND 80-DQT SEGMENT DRIVER G EN ERAL DESCRIPTION T he M SM6665C-xx is a dot-matrix L C D control d riv e r w h ich has functions of d isp layin g characters, cursor and arbitrators.

infineon b 58 468 la intel 80

Abstract: N53A intel dh40 Dh49 as15 h PM5384-NI sd transistor 1HD S26 photodiode N42B Dh46
Contextual Info: User’s Manual MSC8102UM/D Version 1.2 December 17, 2002 MSC8102ADS User’s Manual Motorola, Inc., 2002 Important Notice to Users While every effort has been made to ensure the accuracy of all information in this document, Motorola assumes no liability to any party for any loss or

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

ANA 6681

Abstract: dot matrix 8*8 TOM -1588 tic 246 bd s639b ZZZB KS0070 ci 4303
Contextual Info: KS0070 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER KS0070 is a do t m atrix LCD driver & c o n tro lle r LSI w hich is fabricated by low pow er CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 80 segment signal

501 CHB SPECIFICATIONS

Abstract: s41 415 501 CHB dodo VD 12 51 MSM6665-XX QFP128-P-1420-K S28EM PPP01 abb variable frequency drive wiring diagram S29Q
Contextual Info: O K I Semiconductor M S M 6665-X X _ DOT MATRIX LCD CONTROLLER WITH 17-DOT COMMON DRIVER AND 80-DQT SEGMENT DRIVER GENERAL DESCRIPTION The MSM6665-xx is a dot-m atrix LCD control driver w hich has functions of displaying charac­ ters, cursor and arbitrators.

ST7032

Abstract: st7032i ST7032 driver smd switch s79 smd s79 ST7032 Sitronix S79 SMD S72 SMD sda 2023 mos BF 494 C
Contextual Info: ST Sitronix ST7032 Dot Matrix LCD Controller/Driver n Features l l l l l l l l l 5 x 8 dot matrix possible Low power operation support: - 2.7 to 5.5V Range of LCD driver power - 3.0 to 7.0V 4-bit, 8-bit, serial MPU or 400kbits/s fast I2C-bus interface are available

XDR DRAM

Abstract: ODF10 K4Y54044UF
Contextual Info: K4Y5416 /08/04 4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF XDR DRAM Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81

Contextual Info: Preliminary K4Y5016 /08/04/02 4UC XDRTM DRAM 512Mbit XDRTM DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

TC59YM916AMG32A

Abstract: XDR DRAM XDR Rambus Diode smd BD s18 smd ra6 TC59YM916AMG24A Rambus XDR
Contextual Info: TC59YM916AMG24A,32A,32B,40B TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free Overview The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Contextual Info: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

xdr rambus

Abstract: xdr elpida
Contextual Info: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are

014701 b

Abstract: 8x4Mx16
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

8x4Mx16

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

K4Y50024UC

Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
Contextual Info: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

104BA

Contextual Info: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary

XDR Rambus

Abstract: 8H001
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation