BD MARKING Search Results

D 1703

Contextual Info: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

B 1403 N

Contextual Info: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol

Contextual Info: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

4148SE

Abstract: BD4148 MBD4148 4148CA 4148C BD120 marking 5c diode "MARKING 5H"
Contextual Info: M ICDNDUCTOR ! MMBD4148/SE/CC/CA JH CONNECTION 4 1 ^ S O T -23 M M BD 4148 M M B D 4148C C [IT 3 • 4148SE \ * * * * * *2J 5H H] DIAGRAMS j 1 2 NC 3 I 4148C C MARKING 5H M M BD 4148C A D6 D5 M M BD 4148SE D4 1 2 3 I 4148C A High Conductance Ultra Fast Diode

PG15FBUSC

Contextual Info: SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

KRX204E

Contextual Info: SEMICONDUCTOR KRX204E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX204U

Contextual Info: SEMICONDUCTOR KRX204U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

FPT-48P-M19

Abstract: FPT-48P-M20 12PW 38
Contextual Info: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

1820-1940

Abstract: MBM29DL161BD-90PFTN MBM29DL163TD-90PFTN BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Contextual Info: MBM29DL16XTD/BD-70/90 Data Sheet Retired Product MBM29DL16XTD/BD -70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: WRP SERIES POWER TYPE SILICON COATED WIRE WOUND RESISTORS FLAME PROOF Marking: BD DIMENSION mm (inch) Body Lead Wire Tolerance Style BL ± 1 BD ±0.5 LL±1 (% ) L D ± 0 .0 5 Resistance Range 1 11 ( 433) 4.5 (.177) 3 0 (1 .1 8 1 ) 0 .8 (0 3 1 ) 0 .0 5 0 « 5 0 0

resistance 47k ohm

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD ¥Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% ¥Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD ¥Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% ¥Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD •1. Features Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% •Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.

1820-1940

Abstract: BGA-48P-M13 DS05-20874-7E FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”

Rb-1008B

Abstract: rubidium frequency standards rubidium
Contextual Info: Epson Toyocom Rubidium Atomic oscillator RUBIDIUM ATOMIC OSCILLATOR Portable type Rubidium Frequency Standard Rb - 1008 B / C / BD / CD •Features : : Excellent frequency stability Portable type Specifications (characteristics) Standard Parameter Frequency stability

620 diode

Abstract: marking bd SOd123 CT28 Q62702-B403 DIODE MARKING CODE BD
Contextual Info: BB 620 Silicon Variable Capacitance Diode ● BB 620 For Hyperband TV/VTR tuners, Bd I Type Marking Ordering Code tape and reel BB 620 red S Q62702-B403 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30

Contextual Info: 32E D • fl23L.32Q 0Qlb57b T H S I P Silicon Tuning Diode ~ T - 0 'i ^ ^ .SIEMENS/ SPCL-. SEMICONDS For Hyperband TV/VTR tuners. Bd I BB 620 _:_ Cathode B B620 Type Ordering code Q62702-B403 Marking red/S Maximum ratings Reverse voltage

Contextual Info: Aluminum Electrolytic Type / Surface Mount Type Miniature Low Profile Aluminum Electrolytic Capacitors CE-BD RoHS compliance 4.5mm Height Series ● Solvent proof within 2 minutes • Specifications Items Condition Specifications Rated voltage (V) −