BD 675 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

bow 94c

Abstract: box 53c BOX 53C IC CSI 24C bdx 679 BD NPN transistors bd* to-220 bdx 94c TO-126 BD PNP
Contextual Info: POWER TRANSISTORS — > o m o _u c E UJ IL o o ur> £a an d < < > X CO _o E ro BD 675A BD 676A BD 677 BD 678 BD 677A BD 678A BD 679 BD 680 BD 679A BD 680A BD 681 BD 682 BDW 23* BDW 24* BDW 23A* BDW 24A* BDW 23B* BDW 24B* BDW 23C* BDW 24C* BDW 93* BDW 94*

transistor BD 677

Abstract: BD 675 BD675 677d
Contextual Info: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

transistor BD 680

Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
Contextual Info: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors

BD 677

Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
Contextual Info: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E

BO677

Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
Contextual Info: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

B0680

Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
Contextual Info: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio

transistor BD 680

Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
Contextual Info: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors

BC 677

Abstract: Tfk 680 BD675 bc 681 BD677 BD681 BD 677 BD 681 2DIN125A 2mA80
Contextual Info: V BD 675 • BD 677 • BD 679 •BD 681 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Sehr hohe Stromverstärkung Features: • Very high current transfer ratio

BD681

Abstract: bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR
Contextual Info: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD 678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V

Contextual Info: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD677A

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

cke varistor

Contextual Info: SUPPRESSION BARE MOV DISCS – BD SERIES CKE Part Number Z60BD Series Z60BD391 Z60BD431 Z60BD471 Z60BD511 Z60BD621 Z60BD681 Z60BD751 Z60BD781 Z60BD821 Z60BD911 Z60BD951 Z60BD102 Z60BD112 Z60BD122 Z60BD142 Z60BD162 Z60BD182 Z60BD222 Z60BD272 Z60BD332 Z60BD392

7 Segment 705

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E40UBRI SINCE 1981 ● Features : 1. 0.40 inch 10.16mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

seven segment 2 digit height 0.52

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-C53UBRD SINCE 1981 ● Features : 1. 0.52 inch 13.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-F40UBRI SINCE 1981 ● Features : 1. 0.40 inch 10.16mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

DSA00336

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A51UBRI SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E52UBRI SINCE 1981 ● Features : 1. 0.54 inch 13.80mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BD-A51UBRD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A51UBRD SINCE 1981 ● 1. Features : ● Package Dimensions : 0.56 inch 14.20mm Digit Height. 8.10(.315) 8 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability.

cke varistor

Abstract: 4900 bd Z40BD391 1055 561 VARISTOR Z40BD112
Contextual Info: BARE MOV DISKS – BD SERIES Passivation Collar FIGURE 115 Electrode Electrode 40±1 1.5748±0.0394 Passivation Collar (See Table Passivation Collar FIGURE 116 Electrode Electrode Electrode Electrode 60±1 (2.3622±0.0394 CKE Part Number Z40BD Series Z40BD201

SM 78A

Abstract: D675 LE 79A D676 BD675 BD675A BD676 BD676A BD677 BD677A
Contextual Info: SGS-THOMSON S i ;L Ì S lftB lD (S Ì BD 675/75A/77/77A/79/79A /81 B D 676/76A /78/78A /80/80A /82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­

CMM6003-SC

Abstract: CMM6003-SC-0G00 CMM6003-SC-0G0T PB-CMM6003-SC-0000 16550 smt
Contextual Info: 50-870 MHz High Dynamic Range Amplifier CMM6003-SC -BD March 2007 - Rev 13-Mar-07 Features Functional Block Diagram 50 to 870 MHz Frequency Range +41 dBm Output IP3 1.6 dB Noise Figure (@ 450 MHz) 17 dB Gain 22 dBm P1dB SOT-89 SMT Package Single Power Supply

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

Contextual Info: NCP2820 Series 2.65 W Filterless Class-D Audio Power Amplifier http://onsemi.com MARKING DIAGRAMS 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL C1 xx A Y WW G • • • • • • • • • • • = AQ for NCP2820 = BD for NCP2820A = Assembly Location