BD 649 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BD699

Abstract: BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698
Contextual Info: N PN PN P l e = 3.0 A. 2N4921 2N4918 v C EO V olts Hf e @ 'c Am p V C E sat @ 'C V o lts Am p fT MHz PD Watts Case 40 20/100 0.5 0.6 1.0 3.0 30 77 M JE 3 1 M JE 3 2 40 25/- 1.0 1.2 3.0 3.0 40 77R BD 17 5 BD 17 6 45 15/— 1.0 0.8 1.0 3.0 30 77 BD 57 5 BD 5 7 6

BDX69

Abstract: transistor handbook BDX68 BDX68A BDX68C BDX69B
Contextual Info: ¡A-ISp 2 .5 8 BDX69; 69A BDX69B; 69C JV DARLINGTON POWER T R A N SIST O R S N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BD X68, 8D X6 8A , BD X 6 8 8 and BD X 68 C . Q U IC K R E F E R E N C E D A T A

CHN 749

Abstract: CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64
Contextual Info: 74C{},|,3/ >;861 >?.?2 =28.D /IGS7;0 3IFUVSIT \ \ \ \ \ \ \ \ \ Gcf_ Ni@ F799:>7 DQD68667667?9< :666V ^c_f_]nlc] mnl_hanb Pbini cmif[ncih Cocfn3ch mho\\_l Z_li ]limm il l[h^ig nolh3ih TRJBD BD ionjon P[h_f giohn ED il BD ]ihnlif Wcnb LFE ch^c][nil il hin Fhpclihg_hn[f jlin_]ncih jli^o]n [p[cf[\f_

Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.

Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 7 6 5 4 3 2 LOC ,19 DIST BD ALL INTERNATIONAL RIGHT5 RESERVED. 48 REVISIONS ZONE LTR DATE DESCRIPTION RELEASED REV PER REV PER

Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 7 6 5 3 4 2 LOC ,19 DIST BD 48 ALL INTERNATIONAL RIGHT5 RESERVED. 1 REVISIONS ZONE LTR DESCRIPTION RELEASED REV PER REV PER REV PER

Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 7 6 5 4 3 2 LOC ,19 DIST BD ALL INTERNATIONAL RIGHT5 RESERVED. 48 REVISIONS ZONE LTR B C DATE DESCRIPTION RELEASED REV PER REV PER

Contextual Info: 7 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 5 3 4 2 LOC ,19 DIST BD 48 ALL INTERNATIONAL RIGHT5 RESERVED. 1 REVISIONS ZONE LTR RELEASED REV PER REV PER REV PER B C -S3.04 + 0.38

24-20AWG

Abstract: ASTM B633 zinc plating B633 HDP-20 MIL-T-10727
Contextual Info: 7 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 5 3 4 2 ,19 LOC BD ALL INTERNATIONAL RIGHTS RESERVED. 1 DIST 48 REVISIONS ZONE LTR ft D f L \ j\ii ! ' 11 / B C D 53.04+0.38

SiSm672

Abstract: attansic f1 sis968 asus t12c J6001 Attansic l1 rlt8201bl Asus SiS307ELV INVERTER BOARD Asus A6
Contextual Info: 5 4 3 2 1 X51C Main BD. R1.0 BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T D Merom CPU D PAGE 29 FAN + Thermal sensor 478B uFCPGA PAGE 50 PAGE 3,4 FSB 800 MHz LVDS SiS307ELV PAGE 46 TV PAGE 45 167 BGA SiSM672 PAGE 25 DDR2 667MHz PAGE 7,8,9 CRT 847 TEBGA PAGE 10,11,12,13,14,15,16

Contextual Info: DRAWING THIS MADE DR AW ING IN IS THIRD ANGLE PROJECTION UNPUBLISHED. COPYRIGHT 19 RELEASED BY A M P FOR P U BLICATIO N INCORPORATED. REVISIO NS BD ALL INTERNATIONAL RIGHTS RESERVED. 48 D ESCRIPTIO N ADDED - 6 , ADOED-7 FERRULE MUS T B E P U R C H A S E D

Contextual Info: THIS MADE IN D RA WI NG THIRD 15 ANGL E 19 4 3 PROJECTION UNPUBLI5HED COPYRIGHT 5 6 7 D RA WI NG RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RI GHTS BD RESERVED. RETAINER CLIP, QTY: S TAIN LE S S STEEL D D I ST LOC 19 48 REV I 5 I0N5

ASTM B633 zinc plating

Abstract: L076 u317 B633 HDE-20 MIL-T-10727
Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ALL 7 6 5 3 4 2 LOC ,19 INTERNATIO NAL RIG H T5 D IS T BD 48 RESERVED. 1 REVISIONS ZONE LTR D E S C R I P T IO N RELEASED REV PER

BD422

Abstract: SO-08 HDE-20 MIL-T-10727
Contextual Info: 6 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 19 5 4 3 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST LOC 19 BD RESERVED. REV I 5 I0N5 48 ZONE RETAINER CLIP, QTY STAINLESS STEEL DATE R E L E A S E D PER NPR 250 3

X51L

Abstract: 12c5202 Asus T0327 C3203 12G17000004J C0820 diode ICS9LPR363DGLF-T MW772 C0821
Contextual Info: 5 4 3 2 1 X51L Main BD. R2.0 BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T D D Merom CPU PAGE 29 FAN + Thermal sensor 478B uFCPGA PAGE 3,4 PAGE 50 FSB 800 MHz LVDS PAGE 46 CRT CRESTLINE 960GL PAGE 45 SiI1368 SDVO to LPFQ48 DVI DVI PAGE 45 C DDR-II SO-DIMM X 2

C3855

Abstract: EC-ITE8752 C3854 M1101 d8107 IT8750E ASUS G41 asus k50 ASUS CX1114
Contextual Info: 5 4 3 2 1 T53S Main BD. R1.2 Block Diagram CLOCK GEN. ICS9LPR363CGLF-T Merom CPU LV / ULV D PAGE 29 D 479 FBGA FAN + Thermal sensor PAGE 3,4 LVDS FSB 800/533 MHz PAGE 50 PAGE 46 Nvidia NB8P-GS + 256MB CRT PAGE 45 PCI-E 16X Crestline PM965 DDR2 533/667MHz DDR-II

BD646F

Abstract: BD649F BD650F BD643F BD648F BD652F 651F
Contextual Info: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.