BD 434 Search Results

BD NPN transistors

Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
Contextual Info: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

transistor d325

Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector

power transistor mrc 438

Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Contextual Info: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

bo434

Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Contextual Info: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

transistor 438

Abstract: TRANSISTOR BD 436 A8550 BD433B TRANSISTOR BD 437 TRANSISTOR 434
Contextual Info: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO -126 • Com plem ent to BD433, B D 435 and BD 437 respectively ABSO LU TE MAXIMUM RATINGS Sym bol C h ara cte ristic Collector B a s e Voltage : BD 434 : BD 436

IR 436

Abstract: bf 434 amplificateur FT 434 512-BD deflexion vertical tv deflexion BD436
Contextual Info: BD 434 BD 436 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P ITAXIES Compì, of BD 433, 435 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

BD436

Abstract: BD 434 B0436 d341 LT 436 BD434
Contextual Info: BD 434 - BD 436 'W Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannung speziell für Autoradiobetrieb Features: • Low supply voltage especially tor automobil radio

tfk 434

Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A
Contextual Info: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

transistor bd176

Abstract: bd178 bd180 E434
Contextual Info: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Collector Emitter Voltage Rating Unit -45

Contextual Info: EC centrifugal fan R1G133-AA17-02 backward curved, single inlet ebm-papst Mulfingen GmbH & Co. KG Bachmühle 2 74673 Mulfingen Phone: +49 7938 81-0 Fax: +49 7938 81-110 www.ebmpapst.com info1@de.ebmpapst.com Nominal data Type R1G133-AA17-02 Motor M1G055-BD

Contextual Info: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD433, BD 435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit - 22 V BD436 - 32 V BD438 - 45 V - 22 V BD436

BD5936

Abstract: BD5935 dold bd5935 dold bd5936.17 bd 5936 5936 Bd 529 M6469 947-5-1 dold bd5936
Contextual Info: Sicherheitstechnik Stillstandswächter BD 5936 safemaster 0214264 • zur Stillstandsüberwachung von 3- und 1-phasigen Asynchronmotoren · Aderbrucherkennung im Meßkreis · zwangsgeführte Ausgangskontakte: 2 Schließer, 2 Öffner für AC 250 V · LED-Anzeigen für Motorstillstand, Aderbruch und Betriebsspannung

transistor bd438

Abstract: BD436 TRANSISTOR 436 BD434 U501 TRANSISTOR bd436 BD433 BD435 BD437 BD438
Contextual Info: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD433, BD 435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit - 22 V BD436 - 32 V BD438 - 45 V - 22 V BD436

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: M-957 DTJIIIF Receiver *v detection of a valid end-of-signal pause or by the CLEAR input. An early signal presence indicator, BD, facilitates applications requiring tone blocking. The data outputs operate with simple logic circuits or microprocessors, and are threestate enabled to facilitate bus-oriented architectures.

107J

Abstract: 406J AMPLIMITE .050 Series 3 749621-3
Contextual Info: 7 8 DRAWING MADE IN T H I R D THIS DRAWING ANGLE 6 5 4 3 2 1 PROJECTION IS UNPUBLISHED COPYRIGHT 19 ,19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS LOC DIST BD RESERVED. REVISIONS 95 ZONE DATE CODE OPTIONAL LOCATION LTR DESCRIPTION

Contextual Info: BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P N-P silicon transistors, in a plastic T 0 -2 0 2 package, recom m ended fo r use in television circuits and audio applications. N-P-N com plem ents are BD 839, BD841 and BD843. QUICK REFERENCE DATA

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

Contextual Info: REVISION HISTORY ECO REV _ VOUT 5V/500mA DESCRIPTION REBUILD WITH CHANGES 1 DATE MOLLY Z. 06-18-10 L1 10uH VOUT E1 C1 10uF 10V 0805 GND E2 CDRH4D22/HP-100 U1 LT3502AEDC VIN VIN 7V - 40V 1 VIN SW BD BOOST 8 E3 VOUT + C4 10uF 50V opt. APPROVED C3 1uF 50V 2