BD 100 V Search Results

Contextual Info: Film Capacitors – Power Factor Correction Current limitation reactor Series/Type: Ordering code: BD-050/BD-100/BD-200 B44066T….E400/E480 Date: Version: December 2010 1 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

TIP 34 pnp

Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
Contextual Info: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B

BD699

Abstract: BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698
Contextual Info: N PN PN P l e = 3.0 A. 2N4921 2N4918 v C EO V olts Hf e @ 'c Am p V C E sat @ 'C V o lts Am p fT MHz PD Watts Case 40 20/100 0.5 0.6 1.0 3.0 30 77 M JE 3 1 M JE 3 2 40 25/- 1.0 1.2 3.0 3.0 40 77R BD 17 5 BD 17 6 45 15/— 1.0 0.8 1.0 3.0 30 77 BD 57 5 BD 5 7 6

485-BD

Abstract: FX2N-485-BD d8203 FX-485PC-IF M8038 M1140 M8162 M1131 FX2n FX2N-485BD
Contextual Info: USER'S MANUAL FX2N-485-BD COMMUNICATION BOARD USER'S MANUAL FX2N-485-BD COMMUNICATION BOARD HEAD OFFICE: HIMEJI WORKS: JY992D66201A MEE 9706 MITSUBISHI DENKI BLDG MARUNOUCHI TOKYO 100 TELEX: J24532 CABLE MELCO TOKYO 840, CHIYODA CHO, HIMEJI, JAPAN Effective JUN. 1997

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

HRC FUSE LINK

Abstract: BD50 BD-50 BD40 BD63 SB98107 hrc bs88 100 HRC fuse bussmann hrc fuse bs88 200df
Contextual Info: Bussmann Industrial HRC Fuse Link BD 21.4 x 128mm, BS88, IEC 269-1 Center Bolted Tags Time-Current Characteristic Curve Full Size Curves Available CURRENT RATING 40 50 63 1,000 100 TIME IN SECONDS CATALOG SYMBOL: BD INDUSTRIAL HRC FUSE LINK CENTER BOLTED TAGS

Contextual Info: 12.0-16.0 GHz GaAs MMIC Power Amplifier P1043-BD May 2008 - Rev 05-May-08 Features 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control On-Chip Power Detector 100% RF Testing General Description The XP1043-BD is a linear power amplifier that operates

Contextual Info: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The XP1035-BD is a linear power amplifier that

Contextual Info: 13.0-16.5 GHz GaAs MMIC Power Amplifier P1033-BD December 2007 - Rev 12-Dec-07 Features 15 dB Small Signal Gain 25 dBm P1dB Compression Point 35 dBm Output IP3 Linearity 100% On-Wafer RF Testing General Description The XP1033-BD is a driver amplifier that operates over

P1016

Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

28MPA0304

Abstract: DM6030HK TS3332LD XP1023-BD XP1023-BD-000V XP1023-BD-EV1 P1023-BD p1023b 1000-2200pF mimix power amplifier
Contextual Info: 24.0-34.0 GHz GaAs MMIC Power Amplifier P1023-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

M1006

Abstract: 18KWR0327 DM6030HK TS3332LD XM1006-BD XM1006-BD-000V XM1006-BD-EV1 M1006b
Contextual Info: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 32.0-42.0 GHz GaAs MMIC Image Reject Mixer M1003-BD February 2008 - Rev 06-Feb-08 Features Sub-harmonic Image Reject Mixer GaAs HBT Technology 9.0 dB Conversion Loss 18.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

XM1003-BD

Contextual Info: 32.0-42.0 GHz GaAs MMIC Image Reject Mixer M1003-BD February 2008 - Rev 06-Feb-08 Features Sub-harmonic Image Reject Mixer GaAs HBT Technology 9.0 dB Conversion Loss 18.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

XM1003-BD

Contextual Info: 32.0-42.0 GHz GaAs MMIC Image Reject Mixer M1003-BD February 2007 - Rev 16-Feb-07 Features Sub-harmonic Image Reject Mixer GaAs HBT Technology 9.0 dB Conversion Loss 18.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

P1021

Abstract: 18MPA0567 DM6030HK TS3332LD XP1021-BD XP1021-BD-000V XP1021-BD-EV1
Contextual Info: 17.0-22.0 GHz GaAs MMIC Power Amplifier P1021-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XP1023-BD

Abstract: 28MPA0304 DM6030HK TS3332LD XP1023-BD-000V XP1023-BD-EV1
Contextual Info: 24.0-34.0 GHz GaAs MMIC Power Amplifier P1023-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

M1002-BD

Abstract: 40IRM0421 TS3332LD XM1002-BD
Contextual Info: 34.0-46.0 GHz GaAs MMIC Image Reject Mixer M1002-BD July 2007 - Rev 25-Jul-07 Features Fundamental Image Reject Mixer 7.0 dB Conversion Loss 20.0 dB Image Rejection +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883

DM6030HK

Abstract: TS3332LD XM1000 XM1000-BD XM1000-BD-000V XM1000-BD-EV1
Contextual Info: 32.0-46.0 GHz GaAs MMIC Balanced Mixer September 2007 - Rev 04-Sep-07 M1000-BD Features Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

6OSC0460

Abstract: DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1
Contextual Info: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

tanaka TS3332LD epoxy

Contextual Info: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

varactor diode application

Contextual Info: 6.8-7.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1003-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

D1005

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883