BCX51 BCX52 BCX53 AB Search Results

BCX51

Abstract: BCX53 BCX53-10 BCX53-16 BCX54 BCX55 BCX56 BCX51-10 BCX51-16 BCX52
Contextual Info: BCX51 BCX52 BCX53 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – ✪ BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56 C PARTMARKING DETAILS – BCX51 – AA BCX51-10 – AC BCX51-16 – AD BCX52 – AE BCX52-10 – AG

BCX55C

Abstract: BCX51 BCX51-10-AC BCX51-16-AD BCX52 BCX52-10-AG BCX52-16-AM BCX53 BCX54 BCX55
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS lee,e9 Ccnnl lAnu.nmc n Gii2 COMPLEMENTARY I TYPE - BCX51 - BCX54 BCX52 - BCX55 c BCX53 - BCX56 PARTMARKING BCX51 DETAILS - -AA BCX52 - AE BCX53-I O- AK E \@ c BCX53-I 6- AL BCX52-16-AM BCX51-16-AD - AH BCX53

sot89 AE pnp

Abstract: BCX53-16
Contextual Info: Not Recommended for New Design Please Use BCX5316 BCX51 BCX52 BCX53 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – ✪ BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56 C PARTMARKING DETAILS – BCX51 – AA

BCX51

Abstract: BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX54 BCX55 BCX56
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCX51; BCX52; BCX53 PNP medium power transistors Product specification Supersedes data of 1997 Jul 04 1999 Apr 19 Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53

Transistors

Abstract: BCX52 BCX53 BCX54 BCX55 BCX56 BCX51 BCX51-10 BCX51-16 BCX52-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCX51; BCX52; BCX53 PNP medium power transistors Product specification Supersedes data of 1999 Apr 19 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53

Contextual Info: BCX51 BCX52 BCX53 SOT89 PNP SILICON PLANAR M EDIU M POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996_ O C O M P LEM EN T A R Y TYPE - BCX51 - BCX54 BC X52 - BCX55 BCX53 - BCX56 P A R T M A R K IN G D E T A I L S BCX51 BCX52 -A A -A E BCX53 -A H B C X 5 1 -1 0 -A C

Contextual Info: Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX51 Symbol Rating Unit VCBO -45 V BCX52

BCX53

Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
Contextual Info: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60

Marking code AM

Contextual Info: DISCRETE SEMICONDUCTORS a ffi SHEET BCX51 ; BCX52; BCX53 PNP medium power transistors 1999 Apr 19 Product specification Supersedes data of 1997 Jul 04 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistors

x5 sot89

Abstract: QBCX51 8CX53
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996_ C O M P L E M E N T A R Y TYPE - BCX51 BCX52 BCX53 Q BCX51 - B C X54 B C X 5 2 - B C X55 B C X 5 3 - B C X56 P A R T M A R K I N G D E T A IL S BCX5 1 -A A BCX52 -A E BCX53

MARKING BL SOT89

Abstract: marking AL sot89 BCX51 SOT89 MARKING CODE B2 BCX53 sot89 AE pnp PHILIPS BCX52-10 BCX51-10 BCX51-16 BCX52-16
Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • ivieaium power general purposes

BCX52-16

Abstract: BCX54 BCX55 BCX56 BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX53
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCX51; BCX52; BCX53 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 04 Philips Semiconductors Product specification

marking code VV transistors

Abstract: PNP TRANSISTOR "SOT89" marking aa
Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes

Contextual Info: • ^ 5 3 ^ 3 1 0024E>05 556 BIAPX N AMER PHILIPS/BISCRETE b7E D J BCX51 BCX52 BCX53 V SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended fo r applications in thick and thin-film circuits. These transistors are intended for general purposes as well as fo r use in driver stages

55ay

Abstract: AL SOT-89 BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX54
Contextual Info: • b b S B ^ l 0D2MbD5 55ß BIAPX N AMER PHILIPS/DISCRETE BCX51 BCX52 BCX53 b?E T> SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended fo r applications in thick and thin -film circuits. These transistors are intended fo r general purposes as well as fo r use in driver staqes

BCX53-6

Abstract: BCX51-6 bcx52-6 BCX51 BCX52 BCX53 AB BCX51 BCX51-10 BCX51-16 BCX52 BCX53 BCX54
Contextual Info: □b53^31 N ANER P H I L I P S / D I S C R E T E ObE QD15bö2 b BCX51 BCX52 BCX53 D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

BCX5216QTA

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE SAT < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE sat < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

AM/mcl d01 94V0

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

BCX51 BCX52 BCX53 AB

Abstract: BCX51 BCX52 BCX53 sot-89 Marking aj
Contextual Info: ô23SbQS DD242Sb b W S I E G L47E D PNP AF Transistors T '3 ^ BCX 51 BCX 53 1 7 SIEMENS AKTIENGESEL LSCH AF _ • • • • For A F driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: B C X 54 - . B C X 56 NPN

CX51B

Contextual Info: MEC SILICON TRANSISTORS ELECTRON DEVICE B C X 5 1 ,B C X 5 2 ,B C X 5 3 PNP SILICON EPITAXIAL TRANSISTOR POWER M INI MOLD DESCRIPTION T h e B C X 5 1 to 5 3 are designed f o r a u d io fre q u e n c y p o w e r a m p lifie r a p p lic a tio n , esp ecia lly in H y b r id In te g ra te d C irc u its .

marking yc SOT-89

Abstract: sot-89 Marking aj npn transistor sot-89 MARKING AG
Contextual Info: SILICON TRANSISTORS B C X 5 1 ,B C X 5 2 ,B C X 5 3 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The BCX51 to 53 are designed fo r audio frequency pow er a m p lifie r app lica tion, especially in H y b rid Integrated C ircuits. FEATURES

Contextual Info: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS:BCX54 – BA BCX54-10 – BC BCX55 – BE BCX55-10 – BG BCX56 – BH BCX56-10 – BK C BCX54-16 – BD BCX55-16 – BM BCX56-16 – BL E