| BCR191W |
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Infineon Technologies
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PNP Silicon Digital Transistor |
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42.18KB |
4 |
| BCR191W |
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Infineon Technologies
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Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: PNP; R1 (typ): 22.0 kOhm; R2: 22.0 k?; hFE (min): 120.0; Vi (on) (min): 1.0 2mA / 0.3V; |
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180.67KB |
10 |
| BCR191W |
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Infineon Technologies
|
PNP Silicon Digital Transistor |
Original |
PDF
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116.32KB |
4 |
| BCR191W |
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Siemens
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PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
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36.12KB |
4 |
| BCR191WE6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
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8 |
| BCR 191WE6327 |
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Infineon Technologies
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TRANS DIGITAL BJT PNP 50V 100MA 3SOT-323 T/R |
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499.31KB |
10 |
| BCR191WE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
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837.02KB |
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| BCR191WH6327 |
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Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
|
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8 |
| BCR191WH6327XTSA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
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837.02KB |
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