| BCR142W |
|
Infineon Technologies
|
R1=22 k ? R2=47 k ? |
Original |
PDF
|
42.08KB |
4 |
| BCR142W |
|
Infineon Technologies
|
NPN Silicon Digital Transistor |
Original |
PDF
|
41.87KB |
4 |
| BCR142W |
|
Infineon Technologies
|
Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 22.0 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 1.2 2mA / 0.3V; |
Original |
PDF
|
116.04KB |
10 |
| BCR142W |
|
Siemens
|
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
|
36.16KB |
4 |
| BCR142W |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
| BCR142WE6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
Original |
PDF
|
|
8 |
| BCR142WE6327HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
Original |
PDF
|
837.69KB |
|
| BCR142WH6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
Original |
PDF
|
|
8 |
| BCR142WH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
Original |
PDF
|
837.69KB |
|
