BC869 TRANSISTOR Search Results

b3p3

Abstract: cec PNP transistor SOT89 transistor marking 84 SOT89 marking cec 12039 PNP TRANSISTOR SOT89 sot89 footprint BC869-16 SOT89 PHILIPS BC868-16 BC868-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Dec 02 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC869

cec PNP transistor

Abstract: BC869-10
Contextual Info: BC869 J v _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature package, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable for class-B audio output stages up to 3 W.

BC869-16 SOT89 PHILIPS

Abstract: PHILIPS BC869 BC869 BC869-16 BC869-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 02 2004 Nov 08 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC869

BC869-16 SOT89 PHILIPS

Abstract: 13861 SOT89 marking cec BC869 BC869-16 BC869-25 SOT89 transistor marking 84
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 FEATURES

marking chc

Abstract: BC868 BC869 BC869-16 BC869-25 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor Product specification Supersedes data of 1998 Jul 16 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic.

transistor 103

Abstract: BC869 BC869-10 BC869-16 BC869-25 marking code CFC SOT
Contextual Info: 71 1 0 0 5 b DObfl4Sfl TT7 • P H I N BC869 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC 868/BC869 is the matched complementary pair suitable for class-B audio output

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features High current max. 1.0A Low voltage (max. 20V) Lead Free Finish/RoHS Compliant ("P" Suffix designates

BC869

Abstract: BC869-10 BC869-16 BC869-25
Contextual Info: • bbsa'm □Q24Mt15 m N AMER PHILIPS/DISCRETE ■ APX BC869 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic m icrom iniature envelope, intended fo r low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio o u tp u t

transistor n53

Abstract: BC869-10
Contextual Info: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic. UL Flammability

marking chc

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • High current max. 1.0A Low voltage (max. 20V) Lead Free Finish/RoHS Compliant ("P" Suffix designates

SOT89 marking cec

Abstract: MARKING 93 SOT89 SOT89 MARKING CODE B2 BC868 BC869 BC869-16 BC869-25 PNP TRANSISTOR "SOT89" PHILIPS BC869 BL SOT89
Contextual Info: Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications.

LF 358

Abstract: SOT89 marking cec BC868 BC869 BC869-16 BC869-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01 Philips Semiconductors Product specification PNP medium power transistor

Contextual Info: BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview

cec "sot89"

Abstract: BC869 SOT89 chc CHC SOT89
Contextual Info: Not Recommended for New Design Please Use BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - OCTOBER 1995 BC868 | m O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869

BC869

Abstract: cec "sot89" BC868 BC869-16 BC869-25 FMMT549
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC868 NPN PARTMARKING DETAILS -

Contextual Info: Transistors SMD Type Product specification BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage

Contextual Info: I SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 •OCTOBER 1995 O_ BC868 m FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE- BC869

marking chc

Abstract: SOT89 marking cec BC868 BC868-16 BC869 BC869-16 BC869-25 MARKING SMD CEC
Contextual Info: Transistors SMD Type PNP Medium Power Transistor BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage

cec "sot89"

Contextual Info: PART OBSOLETE - USE BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE -