BC161 TRANSISTOR Search Results

bc160

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 0027510 70b IAPX BC160 BC161 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes for general purpose applications. N-P-N complements are BC140 and BC141. QUICK REFERENCE DATA BC160 BC161

BC161-16

Abstract: 1N916 BC160 BC161 BC161 equivalent
Contextual Info: MOTOROLA Order this document by BC161–16/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC161-16 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO – 60 Vdc Collector – Base Voltage

BC160

Abstract: BC161 transistor bc160 BC161-10 BC140 BC141
Contextual Info: PNP BC160/10 – BC160/16 PNP BC161/10 – BC161/16 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are particulary designed for audio amplifiers and switching applications up to 1A. NPN complements are the BC140 – BC141.

Contextual Info: Æ T SG S-TH O M SO N D lsi S IIL[lCTIs! iD©S BC161 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC161 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching application up to 1A.

Contextual Info: MOTOROLA Order this document by BC161-16/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC161-16 COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit v CEO -6 0 Vdc Collector-Base Voltage v CBO -6 0

BC161-16

Abstract: TRANSISTOR BC141 BC161 transistor BC141-16 transistor bc161-16 bc161
Contextual Info: BC161-16 GENERAL PURPOSE TRANSISTOR PRELIMINARY DATA DESCRIPTION The BC161-16 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A. The complementary NPN type is the BC141-16.

BC161

Abstract: BC160-16 TRANSISTOR BC140 BC160 BC160 TRANSISTOR BC160-10 BC161-10 bc160-40 BC140 BC141
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160; BC161 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification PNP medium power transistors

BC160-10

Abstract: BC161 BC160 BC160-16 bc140 BC161-10 BC161-16 transistor bc160 BC141
Contextual Info: PHILIPS INTERNATIONAL SbE ]> • BC160 BC161 43D IPHIN 711D02ti SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes for general purpose applications. N-P-N complements are BC140 and BC141. QUICK REFERENCE DATA BC160 Collector-emitter voltage open base

BC160

Abstract: BC161-10 BC161 transistor bc160 BC160 TRANSISTOR BC160-16 bc160-10 BC161 transistor TRANSISTOR BC141
Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose applications.

bc141-16

Abstract: TRANSISTOR BC141 BC141 BC141 equivalent P008B BC161-16 BC161 transistor
Contextual Info: BC141-16 GENERAL PURPOSE TRANSISTOR DESCRIPTION The BC141-16 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A. The complementary PNP type is the BC161-16.

BC161-16

Abstract: Bc161 marking
Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 80.0 V NO. BC161-16 Voltage, Collector to Emitter (VCE) 60.0 V TYPE PNP Voltage, Emitter to Base (VEBO) 5.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)

BC140

Abstract: bc141 BC140 equivalent BC140-BC141 BC141 equivalent bc141-16 transistor bc140 DSA008994 BC160 BC161
Contextual Info: NPN BC140/10 – BC140/16 NPN BC141/10 – BC141/16 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial NPN transistors mounted in TO-39 metal package. They are particulary designed for audio amplifiers and switching applications up to 1A. PNP complements are the BC160 – BC161.

bc140

Abstract: BC141 BC141-16 BC141-10 BC140-10 BC140-16 BC160 BC161 J 3305 BC140 10
Contextual Info: _ _ _ PHILIPS INTERNATIONAL 5bE D • BC140 BC141 j 711G0Sb 0 Q 4 n b 2 fl'ìS H P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161.

Contextual Info: N AMER PHILIPS/DISCRETE b=!E » bb53T31 0027507 111 BC140 BC141 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161. Q U IC K R E F E R E N C E D A T A

transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
Contextual Info: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as

2n1711 complement

Abstract: bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86
Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The d evices s h o w n in th is ta b le are general purpose tran sisto rs desig ne d fo r sm all and m edium signal, lo w and m ed iu m p o w e r a m p lific a tio n from D.C. to rad io freq u e n cie s in C om m ercial,

2N1893

Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

transistor 2n3053

Abstract: bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E
Contextual Info: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

2N3637S

Abstract: 1000 volt pnp transistor 2N3634S 2N3635S 2N3636S 2N4928S 2N4929S 2N4930S 2N4931S BC140
Contextual Info: TO-39 PNP TRANSISTORS HIGH VOLTAGE AMPLIFIER AND SWITCH Device Type Polarity v CEO Volts lç max. (mA) PNP PNP PNP PNP PNP PNP PNP PNP 140 140 175 175 100 150 200 250 1000 1000 1000 1000 100 500 500 500 Device Type Polarity v CEO (Vdc) I q max. (mA) BC160

ZT92

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc140 TO92

Abstract: 2N4033 BC638-10 BC141 equivalent bc368 equivalent BC369 NPN "Small-signal Transistors Selection" BC64010 BSV16 BSV17-10
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE MEDIUM-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 25 >25 100 – 156 NPN

transistor BC148

Abstract: BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = P N P (N = N P N ) C o lle c t o r base re v e rse v o lt a g e V<:b o ; V ( ' ' c e s ): V A F200U P -2 5 AF 201 U AF 202 P P -2 5 -2 5 A F 20 2S P -3 2 AF 239 P A F 23 9S A F 240 AF 279 C o lle c t o r

BC140 equivalent

Abstract: 2N3053 equivalent 2n4036 equivalent equivalent to BC177 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200