BC140 10 Search Results

BC140

Abstract: bc141 BC140 equivalent BC140-BC141 BC141 equivalent bc141-16 transistor bc140 DSA008994 BC160 BC161
Contextual Info: NPN BC140/10 – BC140/16 NPN BC141/10 – BC141/16 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial NPN transistors mounted in TO-39 metal package. They are particulary designed for audio amplifiers and switching applications up to 1A. PNP complements are the BC160 – BC161.

BC160-10

Abstract: BC161 BC160 BC160-16 bc140 BC161-10 BC161-16 transistor bc160 BC141
Contextual Info: PHILIPS INTERNATIONAL SbE ]> • BC160 BC161 43D IPHIN 711D02ti SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes for general purpose applications. N-P-N complements are BC140 and BC141. QUICK REFERENCE DATA BC160 Collector-emitter voltage open base

TRANSISTOR BC140

Abstract: BC140-16
Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 60.0 V NO. BC140-16 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 7.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC140 equivalent BC141 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification NPN medium power transistors

BC160

Abstract: BC161 transistor bc160 BC161-10 BC140 BC141
Contextual Info: PNP BC160/10 – BC160/16 PNP BC161/10 – BC161/16 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are particulary designed for audio amplifiers and switching applications up to 1A. NPN complements are the BC140 – BC141.

bc160

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 0027510 70b IAPX BC160 BC161 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes for general purpose applications. N-P-N complements are BC140 and BC141. QUICK REFERENCE DATA BC160 BC161

bc140

Abstract: BC141 BC141-16 BC141-10 BC140-10 BC140-16 BC160 BC161 J 3305 BC140 10
Contextual Info: _ _ _ PHILIPS INTERNATIONAL 5bE D • BC140 BC141 j 711G0Sb 0 Q 4 n b 2 fl'ìS H P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161.

bc140

Abstract: bc 141 general purpose complementary transistors Bc 140 transistor transistor bc icbo nA npn
Contextual Info: BC 140 BC 141 SILICON PLANAR NPN GENERAL PURPOSE TRANSISTORS The BC140 and BC 141 are silico n planar epitaxial NPN transistors in TO -39 metal case. They are pa rticularly designed fo r audio am plifiers and sw itching applications up to 1 A. The com plem entary PNP types are the BC 160 and BC 161.

Contextual Info: N AMER PHILIPS/DISCRETE b=!E » bb53T31 0027507 111 BC140 BC141 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161. Q U IC K R E F E R E N C E D A T A

BC286

Abstract: BC287 BC340 BC231 BC138 BC232 BC211 BC388 BC311 BC223
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S CASE BC119 BC138 BC139 BC140 BC141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700 800 800 1 1 0.5 1 1 1 30 30 40 40 60 40 35 40 40 40 BC142 BC143 BC144 BC160 BC161 N P N P

BC377 -25

Abstract: BC345 BC142 BC215 BC377 BC138 BC311 BC388 BC340 BC360
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. H,¡"E CASE BC119 BC138 BC139 BC140 BC141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700 800 800 1 1 0.5 1 1 30 30 40 40 60 40 35 40 40 40 BC142 BC143 BC144 BC160 BC161 N P N P P TO-39 TO-39 TO-39 TO-39 TO-39

BC310

Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) 150 100 100 100 100 1 10 10 1 1 0.35 1.5 0.8 1 1 0.15 1 0.3 1 1 40 40 200 300 300 100 100 2 1 1 1 1 0.4

transistor BC 153

Abstract: transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series
Contextual Info: ESC » m ö23SbQS 0Q043.04 2 « S I E G , NPN Silicon Transistors SIEMENS AKTIENGESELLSCHÂF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF

2N3609

Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

bc140 TO92

Abstract: 2N4033 BC638-10 BC141 equivalent bc368 equivalent BC369 NPN "Small-signal Transistors Selection" BC64010 BSV16 BSV17-10
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE MEDIUM-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 25 >25 100 – 156 NPN

2n1711 complement

Abstract: bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86
Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The d evices s h o w n in th is ta b le are general purpose tran sisto rs desig ne d fo r sm all and m edium signal, lo w and m ed iu m p o w e r a m p lific a tio n from D.C. to rad io freq u e n cie s in C om m ercial,

2N1893

Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

transistor 2n3053

Abstract: bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E
Contextual Info: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

BC377 -25

Abstract: BC286 BC232 BC377 BC287 BC340 BC360 BC343
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ CASE RITY M AXIMUM RATINGS VCE0 Pd Ic ^CER * mW (A) (V) H FE ^ C E (sa t) min max fr C 0b min max COMPLE­ MENTARY TYPE VCE max Ic (niA) (V) (V) (A) 150 100 100 100 100 1 10 10 1 1 0.35 1.5 0.8 1 1 0.15

transistor bcy70

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 Max VcE sat at 60 30 !c Ib h FE Min. Max. 50 250 Continued Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MH z mA 150 100

ZT92

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

transistor BC148

Abstract: BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = P N P (N = N P N ) C o lle c t o r base re v e rse v o lt a g e V<:b o ; V ( ' ' c e s ): V A F200U P -2 5 AF 201 U AF 202 P P -2 5 -2 5 A F 20 2S P -3 2 AF 239 P A F 23 9S A F 240 AF 279 C o lle c t o r

BC140 equivalent

Abstract: 2N3053 equivalent 2n4036 equivalent equivalent to BC177 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

20 pin TFT fujitsu

Abstract: MB434
Contextual Info: FUJITSU MICROELECTRONICS 1QE D J 374ci?tia .□Q0bci3t. M T-73-13-03 MB43458 B Q 3 B & S FUJITSU Ju ly 1984 DSTV84-062 Quad Preamplifier IG iia«i „ . Vertex .f°r rh . _ Time Projection Chamber Sensor The Fujitsu MB43458 is a quad preamplifier IC designed for Vertex Time