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    Belden Inc BHBC10X

    Vert Manager Back Cover 10"w; |Belden BHBC10X
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    Newark BHBC10X Bulk 5 1
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    • 100 $146.58
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    nVent ERIFLEX 553440 (FBC10X9)

    FLEXIBAR/CABLE TO BUSBAR CLAMP,0.4IN BUSBAR THICK,16MM-50MM STRANDED,0.4IN
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    RS 553440 (FBC10X9) Bulk 15
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    nVent ERIFLEX 553505 (FBC10X4)

    FLEXIBAR/CABLE TO BUSBAR CLAMP,0.39IN BUSBAR THICK,1 MM STRANDED-4 MM STRANDED
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    RS 553505 (FBC10X4) Bulk 15
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    nVent ERIFLEX 553430 (FBC10X6)

    FLEXIBAR/CABLE TO BUSBAR CLAMP,0.4IN BUSBAR THICK,2.5MM-16MM STRANDED,0.2IN
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    RS 553430 (FBC10X6) Bulk 15
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    nVent ERIFLEX 553540 (FBC10X20)

    FLEXIBAR/CABLE TO BUSBAR CLAMP,0.4IN BUSBAR THICK,70MM-185MM STRANDED,0.8IN
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    RS 553540 (FBC10X20) Bulk 15
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    BC10X Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    uPD442002F9-BC85X-BC1

    Abstract: FBGA 6x8
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442002-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442002-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442002-X is packed in 48-pin TAPE FBGA.


    Original
    pd442002-x128k-word16-bit48-pin+3i/o16upd442002f9-bc85x-bc1fbga 6x8 PDF

    bc10x

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000A-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000A-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    pd442000a-x256k-word32-pin-bb55x+3-bb70x-bb85xbc10x PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442002-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442002-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442002-X is packed in 48-pin TAPE FBGA.


    Original
    pd442002-x128k-word16-bit48-pin+4i/o16-bb70x-bc70x-dd85x PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012A-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012A-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    pd442012a-x128k-word16-bit48-pin+1i/o16 PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442002-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442002-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442002-X is packed in 48-pin TAPE FBGA.


    Original
    pd442002-x128k-word16-bit48-pin+4i/o16-bb70x-bc70x-dd85x PDF

    BC70

    Abstract: bc10x
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000A-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000A-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    pd442000a-x256k-word32-pin-bb55x+4-bb70x-bb85xbc70bc10x PDF

    uPD442012AGY-BB55X-MJH

    Abstract: uPD442012AGY-BB70X-MJH uPD442012AGY-BB85X-MJH uPD442012AGY-BC70X-MJH uPD442012AGY-BC85X-MJH PD442012AGY-DD12X-MJH-A
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD442012A-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD442012A-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The μPD442012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    pd442012a-x128k-word16-bit48-pin+7i/o16upd442012agy-bb55x-mjhupd442012agy-bb70x-mjhupd442012agy-bb85x-mjhupd442012agy-bc70x-mjhupd442012agy-bc85x-mjhpd442012agy-dd12x-mjh-a PDF

    AM 5888

    Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
    Contextual Info: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is


    Original
    m16000ejev0sg00am 5888samsung mcp reliabilitysamsung mcp+7pd23c32000ab12 nec diodecypress flash 370sunrise tsop 12 20a85xe40/16/12pd442 PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442002-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442002-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442002-X is packed in 48-pin TAPE FBGA.


    Original
    pd442002-x128k-word16-bit48-pin+4i/o16-bb70x-bc70x-dd85x PDF

    tsop 48 PIN

    Abstract: UPD442012AGY-BB70X-MJH-A UPD442012AGY-BB85X-MJH-A
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012A-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012A-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    pd442012a-x128k-word16-bit48-pin+4i/o16tsop 48 pinupd442012agy-bb70x-mjh-aupd442012agy-bb85x-mjh-a PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000A-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000A-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    pd442000a-x256k-word32-pin PDF

    FBGA 6x8

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442002-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442002-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442002-X is packed in 48-pin tape FBGA.


    Original
    pd442002-x128k-word16-bit48-pin+2i/o16fbga 6x8 PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD442000A-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The μPD442000A-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The μPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    pd442000a-x256k-word32-pin-bb55x+2-bb70x-bb85x PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000A-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000A-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    pd442000a-x256k-word32-pin PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000A-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000A-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    pd442000a-x256k-word32-pin-bb55x+3-bb70x-bb85x-bc70x PDF