BC 459 Search Results

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

transistors BC 457

Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

philips tcxo 4322 191

Abstract: TDA 17821 philips 341 mkc TDA 7283 PHILIPS TCXO 4322 191 2 capacitor philips 341 mkc tda 3050 Philips 2222 053 90032 capacitors 594 varistor philips UAA 1250
Contextual Info: BC Components Product Guide 1999 Contents Page BC Components 5 World Wide Web 6 Ordering 7 New Products & Highlights 9 Series Index 10 Ceramic Capacitors, Leaded 13 Film Capacitors 34 Electrolytic Capacitors 59 Film Dielectric Trimmer Capacitors 103 Fixed Linear Resistors

NR8360JP-BC

Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
Contextual Info: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated

NR8360JP-BC

Abstract: InGaAs apd photodiode C10535E C11531E NR8360JP-BC-AZ X13769X CEL avalanche photodiode ingaas ghz B3350
Contextual Info: PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and

PEX8524-BC25BI

Abstract: 8524BB 8524AA D40H s 9413 re-enumeration PEX8111 pex 8516
Contextual Info: ExpressLane PEX 8524VAA/BB/BC and PEX 8524BB/BC 6-Port/24-Lane Versatile PCI Express Switch Data Book Version 1.5 February 2007 Website www.plxtech.com Technical Support www.plxtech.com/support/ Phone 800 759-3735 408 774-9060 FAX 408 774-2169 Copyright 2007 by PLX Technology, Inc. All Rights Reserved – Version 1.5

Contextual Info: LASER DIODE NX7563JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

nm1680

Contextual Info: LASER DIODE NX7663JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

NX7361JB-BC

Abstract: NX7361JB-BC-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 150 mW MIN NX7361JB-BC FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode

Contextual Info: LASER DIODE NX7363JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

X13769E

Abstract: C11531E NX7563JB-BC NX7563JB-BC-AZ P12480E P13623E
Contextual Info: DATA SHEET LASER DIODE NX7563JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

P12480E

Abstract: NX7663JB-BC NX7663JB-BC-AZ C11531E 70MA120 C11159E GBBS
Contextual Info: DATA SHEET LASER DIODE NX7663JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

310 thermistor

Abstract: C11531E NX7363JB-BC NX7363JB-BC-AZ
Contextual Info: DATA SHEET LASER DIODE NX7363JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

nec laser diode OTDR

Abstract: NX7661JB-BC NX7661JB-BC-AZ
Contextual Info: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

bc 5478

Abstract: transistors BC 458 BC 641 bc 457 BC 458 transistor BC 458 transistor bc 855 NTC 279 2322 74 66153
Contextual Info: BC Components Product specification NTC thermistors, moulded range FEATURES 2322 641 6. QUICK REFERENCE DATA • Excellent for surface measurement • Designed for harsh environments • Based on the “2322 640 0.” naked thermistor chips. APPLICATION

sf 128d

Abstract: eb 202d Si 122D EB 203D LB 124D raychem rda xbas tvs1/tvs2 157D CAPACITOR b4 109d
Contextual Info: PM4351 COMET STANDARD PRODUCT DATA SHEET PMC-1970624 ISSUE 10 COMBINED E1/T1 TRANSCEIVER PM4351 COMET COMBINED E1/T1 TRANSCEIVER/FRAMER DATA SHEET ISSUE10: NOVEMBER 2000 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000 PM4351 COMET

PH 41113

Abstract: transistor bc 855 2322 661 16893 2322 100 volt 2322 730 31 103 MCP4021-103/PH 41113 662 mark 662 marking 2322 730 61 transistor Bc 540
Contextual Info: BC Components Maintenance type PTC thermistors for overload protection FEATURES • Different voltages to be chosen in function of the application • Available in three mechanical versions: – 2322 66. 0. naked discs – 2322 66. 1. leaded – 2322 66. 3. taped, on reel

bc 303 transistor

Abstract: transistor bc 318 NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE 160832
Contextual Info: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564LE NX8565LE NX8566LE SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • VERY LOW DISPERSION PENALTY: Over 360 km 6480 ps/nm , NX8564LE-BC/CC

A1306

Contextual Info: PM7328 S/UNI-ATLAS-LITE STANDARD PRODUCT DATASHEET PMC-2010142 ISSUE 1 LITE-ATM LAYER SOLUTION PM7328 S/UNI-ATLAS-LITE ATM LAYER SOLUTION DATASHEET PROPRIETARY AND CONFIDENTIAL RELEASED ISSUE 1: APRIL 2001 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

Contextual Info: GEC PL E SS E Y ISEMICONDUCTORS | ADVANCE INFORMATION 3100-1.3 November 1991 CT2565 MIL-STD-1553 HYBRID BUS CONTROLLER REMOTE TERMINAL AND MONITOR GENERAL DESCRIPTION FEATURES The CT2565 is a dual redundant MIL-STD-1553 Bus Controller BC , Remote Terminal (RT), and Bus Monitor, (BM) Bus

132217

Abstract: PM7324
Contextual Info: PM7324 S/UNI-ATLAS S/UNI-ATLAS DATASHEET PMC-1971154 ISSUE 7 S/UNI-ATM LAYER SOLUTION PM7324 S/UNI-ATLAS SATURN USER NETWORK INTERFACE ATM LAYER SOLUTION DATASHEET ISSUE 7: JANUARY, 2000 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000