BC 104 TRANSISTOR Search Results

BC 104 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
93425ADM/B	Rochester Electronics LLC	93425 - 1K X 1 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

BC 104 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ZO 109 Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230 Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.	OCR Scan	BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230	PDF
transistors BC 557C Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b Contextual Info: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0	Original	UL94V-0 transistors BC 557C transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b	PDF
ic 546 Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b Contextual Info: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0	Original	UL94V-0 ic 546 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b	PDF
BC860W Contextual Info: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 Power dissipation – Verlustleistung 200 mW Plastic case	Original	OT-323 UL94V-0 856AW 857AW 857BW 857CW 858AW 858BW 858CW 859BW BC860W	PDF
transistors BC 23 Abstract: 849B 847C 848B Contextual Info: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1	Original	OT-23 O-236) UL94V-0 transistors BC 23 849B 847C 848B	PDF
BC 620 Abstract: 847BW 846BW 850CW Contextual Info: BC 846W . BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 200 mW	Original	OT-323 UL94V-0 846AW 847AW 847BW 847CW 848AW 848BW 848CW 849BW BC 620 847BW 846BW 850CW	PDF
856B Abstract: 858C Contextual Info: BC 856 . BC 860 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code SOT-23 TO-236 Weight approx. – Gewicht ca.	Original	OT-23 O-236) UL94V-0 856B 858C	PDF
transistor Bc 580 Abstract: TRANSISTOR BC 450 pnp transistor BC 660 Contextual Info: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data For AF input stage and driver applications 3 High current gain Low collector-emitter saturation voltage 1 complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration	Original	847BL3, 848BL3 857BL3, 858BL3 847BL3 transistor Bc 580 TRANSISTOR BC 450 pnp transistor BC 660	PDF
BC478 Abstract: BC479 BC 195 TRANSISTORS BC477 Contextual Info: BC 477 BC 478 BC 479 SILICON P L A N A R P N P LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC477, BC 478 and BC479 are silicon planar epitaxial P N P transistors in TO-18 metal case. The B C 477 is a high voltage type designed for use in audio amplifiers or driver	OCR Scan	BC479 BC478 BC 195 TRANSISTORS BC477	PDF
bc 471 Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN Contextual Info: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN	OCR Scan	fi23SbGS Q62702-C377 Q62702-C377-V1 Q62702-C377-V2 Q62702-C377-V3 Q62702-C378 Q62702-C378-V1 Q62702-C378-V2 Q62702-C378-V3 fl535b05 bc 471 IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN	PDF
TRANSISTOR BC 416 b pnp Abstract: TRANSISTOR BC 415 TRANSISTOR BC 416 b TRANSISTOR BC 415 b pnp BC 104 transistor bc416 TFK 802 tfk 416 TFK 110 TRANSISTOR BC 560 Contextual Info: BC 415 • BC 416 Silizium-PNP-Epitaxial-Planar NF-Transistoren Silicon PN P Epitaxial Planar A F Transistors Anwendungen: Rauscharme Vorstufen Applications: Low noise pre stages Features: Besondere Merkmale: • Rauschmaß < 2 dB • Noise figure < 2 dB • In Gruppen sortiert	OCR Scan		PDF
BC 418 Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415 Contextual Info: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.	OCR Scan	CB-76 BC 418 bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415	PDF
kc 3229 Abstract: BC 477 G3229 BC 195 TRANSISTORS BC477 G-323 G-3229 BC479 g323 Contextual Info: BC 477 BC 478 BC 479 SILICON PLANAR PNP LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 477, BC 478 and BC 479 are silicon planar epitaxial PNP transistors in TO-18 metal case. The BC 477 is a high voltage type designed fo r use in audio am plifiers or driver	OCR Scan	BC477, G-3229 G-322S G-323; kc 3229 BC 477 G3229 BC 195 TRANSISTORS BC477 G-323 G-3229 BC479 g323	PDF
transistor BC 549 Abstract: transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b TFK BC BC549 BC550 TRANSISTOR BC 135 BE550 TRANSISTOR BC 620 Contextual Info: BC 549 - BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Rauscharme V orstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W	OCR Scan		PDF

857T Abstract: BC857AT BC857BT SC-75 Contextual Info: BC 857T PNP Silicon AF Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs	Original	857AT SC-75 857BT VPS05996 EHP00381 EHP00380 Nov-03-1999 EHP00382 EHP00379 857T BC857AT BC857BT SC-75	PDF
bc237 siemens Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239 Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC	OCR Scan	flS35bQS G041540 Q62702-C697 Q62702-C276 Q62702-C277 Q62702-C698 Q62702-C278 Q62702-C279 Q62702-C280 Q62702-C699 bc237 siemens BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239	PDF
C2373 Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code	Original	Q62702-C2373 OT-363 May-12-1998 C2373 Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor	PDF
transistors BC 848 Abstract: VSO05561 21E sot Contextual Info: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2	Original	VSO05561 846AW OT-323 846BW 847AW 847BW 847CW transistors BC 848 VSO05561 21E sot	PDF
BC 179 Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor Contextual Info: 2SC ì> • 023SbOS O D Q m iS 7 H S I E 6 ¿pc xjtLL^ —- jO D 'y* <Ky PNP Silicon Transistors * " BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case	OCR Scan	023SbOS --------------------------------BC179 62702-C Q62702-C141 62702-C142 Q62702-C685 62702-C153 62702-C154 62702-C686 BC 179 transistor af 178 BC179 BC178B TI-5045 BC179E C154 TRANSISTOR BC 177 transistor	PDF
H12E Abstract: VSO05561 marking 3GS 858W Contextual Info: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2	Original	VSO05561 856AW OT-323 856BW 857AW 857BW 857CW H12E VSO05561 marking 3GS 858W	PDF
Marking 3ds sot Abstract: transistor 5B1 BR 101 Transistor Contextual Info: SIEMENS BC856S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low colfector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Fi FI FI U	OCR Scan	BC856S Q62702-C2532 OT-363 EHP00382 Marking 3ds sot transistor 5B1 BR 101 Transistor	PDF
VPS05604 Abstract: Bc 140 transistor Contextual Info: BC 846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604	Original	VPS05604 EHA07178 OT-363 EHP00381 EHP00367 Nov-08-1999 EHP00365 EHP00364 VPS05604 Bc 140 transistor	PDF
VPS05604 Contextual Info: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604	Original	VPS05604 EHA07175 OT-363 EHP00381 EHP00380 Nov-08-1999 EHP00382 EHP00379 VPS05604	PDF
transistor BC 660 Abstract: 846U H12E Contextual Info: BC 846U NPN Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197	Original	VPW09197 EHA07178 SC-74 EHP00381 EHP00367 Nov-08-1999 EHP00365 EHP00364 transistor BC 660 846U H12E	PDF

BC 104 TRANSISTOR Search Results

BC 104 TRANSISTOR Result Highlights (5)

BC 104 TRANSISTOR Datasheets Context Search

ZO 109

transistors BC 557C

ic 546

BC860W

transistors BC 23

BC 620

856B

transistor Bc 580

BC478

bc 471

TRANSISTOR BC 416 b pnp

BC 418

kc 3229

transistor BC 549

857T

bc237 siemens

C2373

transistors BC 848

BC 179

H12E

Marking 3ds sot

VPS05604

VPS05604

transistor BC 660