BC 103 TRANSISTOR Search Results

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

BC441

Abstract: bc460 transistor bc 102 bc 103
Contextual Info: BC 460 BC 461 SI L I CON P L A N A R PNP MEDIUM POWER AMPLIFIER The BC 460 and metal case. They BC 461 are are silicon intended for planar epitaxial PNP general purpose applications, transistors iri TO-39 especially for driver stages. The com plem entary NPN types are respectively the BC 440 and BC441.

Contextual Info: I NPN Silicon AF Transistors 32E D m ÔB3b320 SIEM ENS/ • • • • • ' D01bb20 SPCL-, ^ ' 1' BC817 T WMSIP BC818 SEM ICON DS For general AF applications High collector current High current gain Low collector-emltter saturation voltage Complementary types: BC 807, BC 808 PNP

BC478

Abstract: BC479 BC 195 TRANSISTORS BC477
Contextual Info: BC 477 BC 478 BC 479 SILICON P L A N A R P N P LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC477, BC 478 and BC479 are silicon planar epitaxial P N P transistors in TO-18 metal case. The B C 477 is a high voltage type designed for use in audio amplifiers or driver

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

H12E

Abstract: VSO05561 marking 3GS 858W
Contextual Info: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2

transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Contextual Info: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

BC560 equivalent

Abstract: bc556 equivalent bc 147 equivalent bc560 BC557 equivalent bc557 b 011 bc560 noise figure bc546 equivalent bc 147 transistor BG558
Contextual Info: BC556. . . BC560 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. The types BC556 and BC557 are available in groups A and B, however, the types BG558,

BC846

Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
Contextual Info: BC856.BC860 PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type

Contextual Info: btS 3 T 31 □D 1 SS 4 S 7 OLE D N AUER PHILIPS/DISCRETE r - SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 envelope, primarily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

I3C327

Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -1 6 , - 2 5 and - 4 0 , according to their DC current gain. As com ­

BC550

Abstract: bc549 equivalent
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • t b S 3^131 00275bb 7ST IAPX B U 54y BC550 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

BCX51 BCX52 BCX53 AB

Abstract: BCX51 BCX52 BCX53 sot-89 Marking aj
Contextual Info: ô23SbQS DD242Sb b W S I E G L47E D PNP AF Transistors T '3 ^ BCX 51 BCX 53 1 7 SIEMENS AKTIENGESEL LSCH AF _ • • • • For A F driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: B C X 54 - . B C X 56 NPN

BC 546 NPN

Abstract: MARKING 7C ICE 47E BCX56-16 BCX54 BCX55 BCX56 BF sot-89 SIEMENS 7L sot-89 Marking code BQ
Contextual Info: 4?E D • ñ23SbGS 002M23Ü ñ ■ S I E G T-33-05 NPN Silicon AF Transistors -• • • • BCX 54 BCX 56 SIEMENS AKTIEN6ESEL LSCH AF - For AF driver and output stages High collector current Low collector-em itter saturation voltage

LE2V

Abstract: Q62702-C1729 Q62702-C1730 SOT-89 marking BC marking BCX
Contextual Info: SIEMENS NPN Silicon AF Transistors BCX 54 . BCX 56 Features • • • • For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX 51 . BCX 53 PNP Type BCX 54 BCX 54-10 BCX 54-16 BCX 55

BC 247 b transistor

Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
Contextual Info: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in

hsk 103

Abstract: 55163 RFT Transistoren service-mitteilungen GER-A RFT HMK 100 aiwa RFT Service Mitteilung GC 6131 RFT A 210 K
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RU ND FU NK UND FERNSEH EN radio -television Ausgabe Seite 198? 1-8 Mitteilung aus dem VBB Elektronische Bauelemente Teltow Neu im Angebot des Handels Phonogerät LT - CS 01 - Vollautomatischer Tangential-Plattenspieler

4148 ZENER DIODE

Abstract: Zener Diode 4148 zener T 4148 C106L 4148 ZENER TRANSISTOR C-111 eurosil transistor SMD 104 bc 107 colpitts oscillator ZENER DIODE 47
Contextual Info: TELEFUNKEN Semiconductors UHF Remote Control System: Receiver Front End and Complete Receiver Design Hints Issue: 10.95 TELEFUNKEN Semiconductors Table of contents 1. Introduction. 1

65a3

Abstract: be5a IPB025N10N3G V9910 95E-9
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren