BB53331 Search Results

Contextual Info: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: N ANER PHILIPS/DISCRETE b3E bb53331 DD273SD 6^3 * A P X D BT152 SERIES y v THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications

BCY65

Contextual Info: I I N AMER PHILIPS/DISCRETE b'lE D • bb53331 □DS7b32 2SA BCY65 IAPX SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications. QUICK REFERENCE DATA

Contextual Info: bb53331 Philips Semiconductors DD32313 m 3 M l APX CATV amplifier module Product specification BGD506 — N AUER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: bb53331 0033173 b06 W A P X Philips Semiconductors Video driver hybrid amplifiers Objective specification CR4424; CR4425; CR4427 N AUER PHILIPS/DISCRETE FEATURES b^E ]> PINNING -S O T115 • Typical 10 to 90% transition times with CL= 8.5 pF: PIN 1 DESCRIPTION

Contextual Info: TIP135 TIP136 TIP137 _ y v SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130,

Contextual Info: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

Contextual Info: Product specification Philips Semiconductors GaAIAs high-voltage optocouplers CNG82/CNG83 FEATURES • High output/input current transfer ratio at low input current • High degree of AC and DC insulation 3750 V (RMS and 5300 V (DC) • Input/output pin distance

Contextual Info: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

T1P31DF

Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

transistor BD 263

Contextual Info: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in

Contextual Info: Product specification Philip* Sem iconductor* Low input current, high-gain optocouplers 6N138/6N139 FEATURES • High current transfer ratio • Short propagation delay times • TTL compatible • Low saturation voltage/low input current • High transient immunity

bd643f

Contextual Info: BD643F; 645F; 647F BD649F; 651F y SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistorsinaSOT186 envelope with an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK R E F E R E N C E D A T A

Contextual Info: _ BSN205 BSN205A JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications

Contextual Info: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

diode sy 200

Abstract: UCM0J
Contextual Info: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm

Contextual Info: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

BDT63

Abstract: BDT62
Contextual Info: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,

Contextual Info: Philips Com ponents D a ta sh e e t s ta tu s Product specification d a te o f is s u e Apr# 1991 B D S 61/61A / 61B / 61C NPN silicon Darlington power transistors DESCRIPTION PINNING - SOT223 NPN silicon pow er transistors in a m onolithic Darlington circu it in a

Contextual Info: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

Contextual Info: • bb53^31 00256=14 562 H A P X N AMER PHILIPS/DISCRETE b?E D _ PMBTA55 PMBTA56 J SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature SMD plastic envelope intended for surface mounted applications.

Contextual Info: P h ilip s C o m p o n e n ts BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SO T199 D ESC R IP TIO N PIN NPN epitaxial base Darlington transistors for audio output stages

Contextual Info: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.