BB SOT23 Search Results

BB813

Abstract: TE sod323 d bb833
Contextual Info: Microwave, RF & Tuner Diodes Varactor Tuning D io d e s 1Type M a x im u m R a t in g 5 VRM BB 419 BB439 BB512 BB515 BB525 BB535 BB545 BB 619 B B 620 BB 639 BB 640 BB 804 BB811 BB813 BB 814 BB833 BBY 51 (Dual) BBY51-03W B B Y 52 (Dual) BBY52-03W ^or c o m P*ete p a c k a g e

TLV2274

Abstract: TLV2272 TLV2271 TLV2272A 606 4 sot23-6 operational amplifier Cross Reference OPA4343A TLC27A amplifier cross TLV2462
Contextual Info: MICROCHIP – MCP601/2/3/4 OPERATIONAL AMPLIFIER CROSS REFERENCE AUGUST 2000 Part # Co MCP Part # 1-CHANNEL DEVICES MCP601 MCP — MCP603 MCP — AD8531 AD 601/3 AD8591 ADI 601/3 OPA337 BB 601/3 OPA340 BB 601/3 OPA343A BB 601/3 OPA353 BB 601/3 ILC7611A-M

TO253

Abstract: PLCC-20 1307 TRANSISTOR TO-253 SILICONIX
Contextual Info: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50

TO253

Abstract: transistor k 790 PLCC-20
Contextual Info: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50

BFR 965

Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Contextual Info: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817

Contextual Info: bb-53^31 DD3EE15 T^7 Hi APX Philips Sem iconductors Product specification NPN 9 GHz wideband transistor X3A-BFR505 crystal N A PIER PHILIPS/DISCRETE b^E » DESCRIPTION MECHANICAL DATA NPN crystal used in BFR505 SOT23 , BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied

PMBF4416

Abstract: PMBF4416A
Contextual Info: Philips Semiconductors_ bb.53^31 DDSMOBS 6TT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E J> QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections

330 marking diode

Abstract: sot-23 marking code sf diode marking 45 Q62702-B372 DIODE Q marking marking Ja diode DIODE 804
Contextual Info: BB 804 Silicon Variable Capacitance Diode ● For FM tuners ● Monolithic chip with common cathode for perfect tracking of both diodes ● Uniform "square law" characteristics ● Ideal Hifi tuning device when used in low-distortion, back-to-back configuration

DIODE MARKING CODE TW

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 814 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 814 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC

BCW61A

Abstract: BCW61B BCW61C BCW61D BCw6
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC

diode FK 330

Abstract: marking FK sot 23
Contextual Info: SIEM ENS Silicon Variable Capacitance Diode BB 804 • For FM tuners • Monolithic chip with common cathode for perfect tracking of both diodes • Uniform "square law" characteristics • Ideal Hifi tuning device when used in low-distortion, back-to-back

marking code BB Diode

Abstract: SH marking sot23 package marking Ja diode Q62702-B404 marking SH SOT23 V143 bb814 MARKING CODE CT2
Contextual Info: BB 814 Silicon Variable Capacitance Diode ● For FM radio tuners with extended frequency band ● High tuning ratio at low supply voltage car radio ● Monolithic chip (common cathode) for perfect dual diode tracking ● Coded capacitance groups and group matching available

2a2 SOT-23

Abstract: marking code BB bb814
Contextual Info: BB 814 Silicon Variable Capacitance Diode 3 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking 2 • Coded capacitance groups and group matching

Contextual Info: BB 804 Silicon Variable Capacitance Diode 3 • For FM tuners • Monolithic chip with common cathode for perfect tracking of both diodes • Uniform "square law" characteristics 2 • Ideal HiFi tuning device when used in 1 low-distortion, back-to-back configuration

b673 transistor

Abstract: transistor B673 914 DIODE b673 DIODE 914 Q62702-B673
Contextual Info: BB 914 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve • High figure of merit

7FL01

Contextual Info: r r 7 SGS-THOM SON ^7# BCW61 BCX71 MÊlf^ilLiOTIRMei SMALL SIGNAL PNP TRANSISTORS Type M arking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

bcx71

Contextual Info: BCW61 BCX71 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND

QS 100 NPN Transistor

Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
Contextual Info: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use

VPS05161

Abstract: a1 sot-23
Contextual Info: BB 914 Silicon Variable Capacitance Diode 3 • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking 2 • Good linearity of C - V curve • High figure of merit

VPS05161

Contextual Info: BB 914 Silicon Variable Capacitance Diode 3
For FM radio tuner with extended frequency band
High tuning ratio low supply voltage car radio
Monolitic chip (common cathode) for perfect dual diode tracking 2
Good linearity of C - V curve
High figure of merit

Contextual Info: n S I ELECTRONICS INC bOE D SbSb4bb 0000415 7TT BB MSI 'P07'/c SOT-23 PACKAGED VARACTORS FOR LOW VOLTAGE, WIDE-BAND TUNING electronics With a capacitance tuning ratio greater than 5s1 for a reverse bias swing from 0.2 to 6 volts, the MSI ZB600^varactor diode series covers an octave

Contextual Info: SIEMENS BB 914 S ilico n V ariab le C a p a c ita n c e D iode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve