BAW10 Search Results

smd JSs diode

Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
Contextual Info: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

BAW100

Abstract: DIODE marking CJSS
Contextual Info: BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy

OA 91 diode

Abstract: high voltage diode high voltage diodes BAW101
Contextual Info: Central Semiconductor Corp. DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES DESCRIPTION The CENTRAL S E M IC O N D U C TO R BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage

Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value

AB marking code smd diode

Abstract: high voltage diode high voltage diodes marking CODE R SMD DIODE smd diode marking code BAW101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 50 ns

BAW101S

Contextual Info: BAW101S NEW PRODUCT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature

K95 Package

Contextual Info: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • NEW PRODUCT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package

Contextual Info: Product specification BAW101 Unit: mm Features Electrically insulated high-voltage medium-speed diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e v o lta g e P e a k re v e rs e v o lta g e F o rw a rd c u rre n t

BAW101S

Abstract: sca75 smd diode marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAW101S High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION

CMSD4448

Abstract: BAS21 SOD323 CMSD2004S
Contextual Info: Issue Number │001 June 2011 New Product Announcement High-Voltage Switching Diodes • The BAS521 and BAS521LP available in the ultra-small plastic SMD packages. • The BAW101V SOT563 features 500mW power dissipation.  The MMBD3004BRM and MMBD5004BRM

Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! ,  ,  Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value

Contextual Info: BAW101S N EW PRODU CT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature

BAW101

Abstract: BFP181
Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 " ! ,  ,  Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage

smd diode K2

Abstract: smd diode 1301 DIODE smd marking k2 transistor smd K2 smd diode JS k2 smd transistor smd transistor k2 SOT-363 marking 05 BAW101S smd JS 3
Contextual Info: Diodes SMD Type High Voltage Double Diode BAW101S SOT-363 Unit: mm +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 Small plastic SMD package 0.36 High switching speed: max. 50 ns +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 High continuous reverse voltage: 300 V

DS321

Contextual Info: BAW101V NEW PRODUCT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature

marking sot-143

Abstract: DIODE marking CJSS IR switch silicon diodes SILICON SWITCHING DIODE BAW100 sot143 code marking MS
Contextual Info: Central BAW100 TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 consists of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This

BAW101

Abstract: BFP181
Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! ,  ,  Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified

BAW101S

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAW101S High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION

sot143 code marking MS

Abstract: BAW100 DIODE marking CJSS SOT143 DUAL DIODE sot143 Marking code MS
Contextual Info: BAW100 DUAL, ISOLATED HIGH SPEED SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 is a Dual Isolated High Speed Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.

00QC

Contextual Info: Central BAW100 semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.

Contextual Info: BAW101 SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface

Contextual Info: Central TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage capabilities. Marking Code is CJP. 94 DATA SHEETS 95