BATI Search Results

MC0603B473M500CT

Abstract: pf 4000 MC0603B683K500CT MC0603B104K500 MC0603F104Z250CT MC0603F104Z500CT
Contextual Info: RoHS Compliant Tape & Reel Dimension Capacitor Dimension L mm W (mm) MB 1.60±0.10 0.80±0.10 0.40±0.15 NO. 1 2 3 4 5 Name NPO/X7R Ceramic material Inner electrode Inner layer Termination Middle layer Outer layer X7R/X5R/Y5V BaTiO3 based AgPd alloy Ni Ag

ECG1088

Abstract: AV73-1 ECG1086
Contextual Info: ECG1086 SYNCHRONOUS SEPARATOR, HORIZONTAL AFC, HORIZONTAL OSCILLATOR sem iconductors Bating: 1. 2. 3. 4. 5. 6. 7. 8 .' 9. 10. 11. 12. 13. 14. Vec O ic Output Regulated Voltage Output Capacitor Osc Regulator Input AFC Output Resistor Ground Hor Hold Filter

POWER DIODE AEI

Abstract: Scans-0017329
Contextual Info: 19H4 EDISWAN I9H4 HIGH VACUUM DIO DE Indirectly heated— for High Voltage Power Rectification •<- BATIM3 q 2.5 Heater Voltage volts 1.7 Heater Current (amps) Maximum Mean Anode Current (mA) a(av)max. Maximum Peak Anode Current (mA) a(pk)max. Maximum Peak Inverse Voltage

Contextual Info: D S 1710 DALLAS SEMICONDUCTOR PIN ASSIGNM ENT • Converts CMOS RAMs into nonvolatile memories 15 □ • SOIC version is pin compatible with the Dallas Semi­ conductor DS1210S and DS1610S NV Controllers V bati Ax c 3 14 □ Az c 4 13 □ W EO Ay c 5 12 □

ECG1068

Abstract: ECG1086
Contextual Info: PHILIPS EC G I NC Di 17E ECG1086 SYNCHRONOUS SEPARATOR, HORIZONTAL AFC, HORIZONTAL OSCILLATOR semiconductors Bating: 1. 2. 3. 4. 5. 6. 7. Vec 8 .' 9. 10. 11. 12. 13. 14. 15. 16. Oic Output Regulated Voltage Output Capacitor Osc Regulator Input AFC Output Resistor

14J2

Contextual Info: W hit HEW LETT L A MP S LEO Technical Data Option 102, 103, 104, 105,106, 107, 108 Features Description * Ideal for PC Board S tatus Indication * Standard 4 E lem ent Configuration * Easy Handling * Easy F lux Removal * Housing M eets UL 94V-0 Flam m ability Bating

Contextual Info: •■■ ' - ' ■- FTE -136-01 -G-CV W iCiW : llllSP Kn^MSBl « *» » » Ss>. w ■>-.»; SPECIFICATIONS Materials: Insulator Material: Choice of post Low p,oh!e heights .067- SI Black Liquid Crystal Polymer Terminal Material: Phosphor Bronze Current Bating:

TRANSISTOR D 471

Abstract: pt sensors 100C
Contextual Info: THERMAL SENSORS / CIRCUIT PROTECTORS THERMAL SENSORS PTC THERMISTOR PT 72 STRUCTURE 1 2 3 4 Thermistor BaTiO3 Inner Electrode (Ni) Solder plating Protective coat IDENTIFICATION PRODUCT CODE PT 72 COATING COLOR MARKING Black (CT: 70° C) Brown (CT: 80° C)

Contextual Info: June 2013 Passive components sales offices ● Head office Philippines Plant Philippines Block No.5, Calamba Premiere International Park, Batino, Calamba, Laguna, Manila, Philippines 4027 Te l:+63 - 49- 545- 0422 E-mail:donna@samsung.com 206, Cheomdansaneop Road,

Contextual Info: CD4504BMS ÍH H A R R IS UU S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features • Pinout CD4504BMS TOP VIEW High Voltage Type 20V Bating • Independence of Power Supply Sequence Consider­

Contextual Info: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode M M BD7000LT1 Motorola Preferred Device 1 ° ANODE N ? i N ° 2 CATHODE CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Symbol Bating Reverse Voltage CASE 318-08, STYLE 11

Contextual Info: . " \ : 7 ì “< D r frn 1 REVISION DESCRIPTION CK'D. HCV, BATI •V V- R E F v P r t ï N T ü i 2 3*Î 23^ JTfcí H ¿T/Ç^T 1 3 -7 -6 1 S E E AD0Et> C.AT M O- V A V I Û - Ê â »OJÊ^ P e«L o c - Z o i t i y v L. ' KÍ-H • H D/f\ ?/ -SOS=dDlSlIVW

usbx2

Abstract: MCHIP SPDIF interface ITER
Contextual Info: 1.3 Block Diagram F bating-point unit SFUinsMnfeth¿us Fbus * ir PII flifim niii iT fifim ¿ ^ Fteripteral buso (Mbu&> CPU bus (CPU cb c k ) Peripheral buso om coritrolter Cache controller Ire to c tb n ese te rrerro SKB Cperand ese he rrerroi Hqh-speed on-chip RAM

Contextual Info: CERAvtf/7Z" INTRODUCTION 100,000 PTCR TECHNOLOGY PTCR’s Positive Temperature Coefficient Resistors are made from high purity semi-conducting cer­ amics. Based on complex titanate chemical compositions (BaTiCb, SrTiCb, etc.), their specific perfor­ mance is created by the addition of dopants and unique processing, including high force pressing into

ic T M 2313

Abstract: MPS3403
Contextual Info: M O T OR OLA SC 12E D I b3b?s5M oaabobñ ^ X S T RS /R F r-X7- S' MPS3403 M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage Vc b o 25 Vdc Vdc Bating Ve b o 5.0 Collector Current — Continuous ic 500 mA Total Device Dissipation @ T>\ = 25°C

Contextual Info: M A X IM U M RATINGS Bating Symbol Value C o lle cto r-E m itte r V o ltage VCEO 60 Vdc C ollector-Base Voltage Vc b o 60 Vdc Em itter-Base V o ltage Ve b o 6.0 Vdc 'c 50 m A dc Sym bol M ax U nit Pd 225 mW 1.8 m W /X r 0JA 556 °c/w Pd 300 mW 2.4 m W /T RflJA

MC0603X105K250CT

Contextual Info: RoHS Compliant Tape & Reel Dimension Capacitor Dimension L mm W (mm) T (mm) MB 1.60±0.10 0.80±0.10 0.80±0.07 0.40±0.15 NO. 1 2 3 4 5 Name X7R/X5R/Y5V Ceramic material BaTiO3 based Inner electrode Inner layer Termination Middle layer Outer layer Ni Cu

100C

Contextual Info: THERMAL SENSORS THERMAL SENSORS PTC THERMISTOR PT72 STRUCTURE 1 2 3 4 Thermistor BaTiO3 Inner Electrode (Ni) Solder plating Protective coat IDENTIFICATION PRODUCT CODE COATING COLOR MARKING PT72 Black (CT: 70° C) Brown (CT: 80° C) Blue (CT: 100° C)

TO206AB

Contextual Info: MOTORCLA SC lEE O I XSTRS/R F L3b72S4 Q Of lt iMBl 2 1 ^-S7-Ä3 2NS230" CASE 26-03, STYLE 1 TO-46 TO-206AB M AXIM UM RATINGS Symbol Value Emitter-Collector Voltage Bating V e CO 20 Unît Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage V EBO 30

Contextual Info: S P E C IFIC A T IO N S High reiiabilty Tiger Eye contacts Mates with: PCMT Materials: Choice of card thickness Insulator Material: Black Liquid Crystal Polym er C ontact Material: BeCu C urrent bating: 1A Operating Tem p Range: -65 C to *12 5 C Plating: Au or Sn over

ATML

Abstract: ats2501 M433-LC M433-mC ATS200 S200 S201 S204 S220 CAN REPEATER CR-21
Contextual Info: i ISSUE: 1.3 UPDATE: February 2006 Emerald Square, rue Evariste Galois – Batiment D, 06410 BIOT - FRANCE Tel : +33 0 4.97.21.33.10, Fax: +33.(0)4.97.21.33.11, email : info@one-rf.com ii Proprietary Notice: Copyright One RF Technology 2006 The information in this document is subject to change without notice.

1943a

Abstract: 4j to92 2SC3303 2SC3383 2005A 2sc3363 2SA1392 SC3383 u 5601 1804J
Contextual Info: Ordering number: EN 1943A 2SA1392/2SC3383 PNP/ NPN Epitaxial Planar Silicon Transistors SAXYO i AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute Maxima Batings at Ta=25°C Collector to Base Voltage CBO Collector to Emitter Voltage vCEO

NL10259

Abstract: National Electronics HFC-22 hl national
Contextual Info: NL10259 NATIONAL -i.*,*,* PAGE 1 0 F 12 TEST SPECIFICATIONS TYPE : 7/1/92 10/23/89 1,8 ifl 10759-1 Description : Continuous Wave Magnetron, Absolute Ma ximum Bating«: Item Symbol Filament Voltage Ef Pre-heating Time Peak Anode Vo ltage 2450 MHz. Fixed Frequency.

k-band amplifier

Abstract: FMC2122P1-02 CLI14
Contextual Info: FMC2I22P1-02 FUJITSU Kit, k - Batid Power GaAs Modules FEATURES • High Output Power: P 1cJB = 21dBm Typ. * High Gain: G1cjb = 12dB(Typ.) ♦ Low In/Out VSWR •Broad Band: 21.2 - 22.4GHz • Impedance Matched ZirVZout = 50Î2 ♦ Hermetically Sealed Package (12 X 15 X 3.5mm)